Taiwan Semiconductor Manufacturing Comp. Ltd.

National Cheng-kung University

Silican Inc.

Che Inc.

Chuan-Pu Liu

Shiu-Ko JangJian

Chi-Cherng Jeng

Volume Chien

Wei-Ken Lin

Chun-Che Lin

Jia-Ming Lin

Yin-Wei Cheng

Kuo-Cheng Lee

Yun-Wei Cheng

Ying-Lang Wang

Zhe-Ju Liu

Jun-Han Huang

Ting-Chun Wang

Chia-Yu Wei

Chun-Hung Chen

Yonhua Tzeng

Chia-Yang Wu

Kun-Huei Lin

Chi-Kai Lin

Allen Tseng

Yin Wei Cheng

Orlando Hector Auciello

Shiu-Ko Jang-Jian

Cheng-Hsueh Lu

Chia-Chun Lan

Bo-Liang Peng

Shih-An Wang

Yi-Chang Li

A structure of a semiconductor device includes a substrate, an isolation structure, and a liner layer. The isolation structure is embedded in the substrate. The isolation structure has a bottom surface and a sidewall. The liner layer is between the substrate and the isolation. A first portion of the liner layer in contact with the sidewall of the isolation structure has a nitrogen concentration lower than a second portion of the liner layer in contact with the bottom surface of the isolation structure.

Semiconductor device

A method of forming a structure having a coating layer includes the following steps: providing a substrate; coating a fluid on the surface of the substrate, where the fluid includes a carrier and a plurality of silicon-containing nanoparticles; and performing a heating process to remove the carrier and convert the silicon-containing nanoparticles into a silicon-containing layer, a silicide layer, or a stack layer including the silicide layer and the silicon-containing layer.

Method of forming structure having coating layer and structure having coating layer

A composite for generating hydrogen includes several core-shell structures, each of which include a silicon-containing core and a shell covering the surface of the silicon-containing core. The shell includes a hydrophilic layer covering the surface of the silicon-containing core and an alkali material covering the hydrophilic layer.

Composite for generating hydrogen

An image sensor device is provided. The image sensor device includes a semiconductor substrate including a front surface, a back surface opposite to the front surface, and a light-sensing region extending from the front surface into the semiconductor substrate. The image sensor device includes a light-blocking structure in the semiconductor substrate and surrounding the light-sensing region. The light-blocking structure includes a conductive light reflection structure and a light absorption structure, and the light absorption structure is between the conductive light reflection structure and the back surface. The image sensor device includes an insulating layer between the light-blocking structure and the semiconductor substrate.

Image sensor device

A method includes forming a flowable dielectric layer in a trench of a substrate; curing the flowable dielectric layer; and annealing the cured flowable dielectric layer to form an insulation structure and a liner layer. The insulation structure is formed in the trench, the liner layer is formed between the insulation structure and the substrate, and the liner layer includes nitrogen.

Method for forming trench structure of semiconductor device

The present disclosure describes a silicide formation process which employs the formation of an amorphous layer in the SiGe S/D region via an application of a substrate bias voltage during a metal deposition process. For example, the method includes a substrate with a gate structure disposed thereon and a source/drain region adjacent to the gate structure. A dielectric is formed over the gate structure and the source-drain region. A contact opening is formed in the dielectric to expose a portion of the gate structure and a portion of the source/drain region. An amorphous layer is formed in the exposed portion of the source/drain region with a thickness and a composition which is based on an adjustable bias voltage applied to the substrate. Further, an anneal is performed to form a silicide on the source/drain region.

Silicide implants

Embodiments of the disclosure provide an image sensor device. The image sensor device includes a semiconductor substrate including a front surface, a back surface opposite to the front surface, a light-sensing region close to the front surface, and a trench adjacent to the light-sensing region. The image sensor device includes a light-blocking structure positioned in the trench to absorb or reflect incident light.

Image sensor device and method for forming the same

The present invention illustrates a conductive composite material, and a negative electrode materials and a secondary battery containing the same. The conductive composite material includes a core, an inner coating layer and an outer coating layer. The core is made of a first material selected from a group consisting of WA element, metal, metal compound or alloy. The inner coating layer is existed on the core and made of oxide, nitride or carbide of the first material. The outer coating layer is existed on the inner coating layer and made of a carbon material and a second material containing halogen or VA element.

Conductive composite material, and negative electrode material and secondary battery containing the same

A trench structure of a semiconductor device includes a substrate, an isolation structure, and a liner layer. The substrate has a trench therein. The isolation structure is disposed in the trench. The liner layer is disposed between the substrate and the isolation structure. The liner layer includes nitrogen, and the liner layer has spatially various nitrogen concentration.

Trench structure of semiconductor device having uneven nitrogen distribution liner

The disclosure provides an image sensor device and a manufacturing method. The image sensor device includes a semiconductor substrate and a light sensing region in the semiconductor substrate. The image sensor device also includes a light blocking structure in the semiconductor substrate and adjacent to the light sensing region. A sidewall of the light blocking structure is a curved surface.

Image sensor device with light blocking structure

A composite electrode and a lithium-based battery are disclosed, wherein the composite electrode comprises: a substrate and a conductive layer formed on the substrate, wherein the conductive layer comprises graphite powders, Si-based powders, Ti-based powders, or a combination thereof embedded in a conductive matrix and coated with diamond films, and the diamond films are formed of diamond grains. The novel electrodes of the present invention when used in the Li-based battery can provide superior performance including excellent chemical inertness, physical integrity, and charge-discharge cycling life-time, and exhibit high electric conductivity and excellent lithium ion permeability.

Diamond film coated electrode for battery

A surface plasmon enhanced light-emitting diode includes, from bottom to top, a substrate, an n-type semiconductor layer, a light-emitting layer, a p-type semiconductor layer, and a plurality of metal filler elements. The p-type semiconductor layer includes upper and lower surfaces, and the upper surface is recessed downward to form a plurality of spaced apart recesses for receiving the metal filler elements, respectively.

Growing community of inventors

Tainan, Taiwan

Chuan-Pu Liu