Jenn Feng New Energy Co., Ltd.

Jenn Feng Industrial Co., Ltd.

Chuan-Lung Chuang

A copper/indium/gallium/selenium (CIGS) solar cell including a thermal expansion buffer layer, and a method for fabricating the same are provided. The thermal expansion buffer layer is configured between an alloy thin film layer and a CIGS thin film layer. The thermal expansion buffer layer is deposited by executing a thin film deposition process with a continuous sputtering machine bombarding a cuprous sulphide (CuS) or cuprous selenide (CuSe) target. Then, a CIGS thin film is further provided on the thermal expansion buffer layer. Finally, a thermal treatment is conducted for melting to integrate the copper ingredients of different thin film layers, thus improving the bondability between the thin film layers and preventing the cracking or the peeling off of the thin film layers caused by the thermal expansion difference.

CIGS solar cell having thermal expansion buffer layer and method for fabricating the same

A method for fabricating a copper/indium/gallium/selenium solar cell by a wet process under non-vacuum condition is provided. In the method for fabricating a copper/indium/gallium/selenium solar cell by a wet process under non-vacuum condition, a substrate having a backside electrode layer is provided, and then a first transparent conduction oxide (TCO) layer, a copper/indium/gallium/selenium layer and a cadmium sulfide layer, a zinc oxide layer, and a second TCO layer are sequentially formed on the backside electrode layer by using a first TCO layer forming process, a copper/indium/gallium/selenium layer and a cadmium sulfide layer forming process, a zinc oxide layer forming process, and a second TCO layer forming process to form the copper/indium/gallium/selenium solar cell with a high conversion efficiency, wherein the first TCO layer forming process, the zinc oxide layer forming process, and the second TCO layer forming process respectively comprise a laser cutting process to individually perform laser cutting and scraping knife cutting for the work piece such that the segmented work pieces are formed for increasing the integration of process and the quality of production.

Method for fabricating copper/indium/gallium/selenium solar cell by wet process under non-vacuum condition

A method and a system for forming a copper indium gallium sulfur selenide (CIGSSe) absorption layer and a cadmium sulfide (CdS) buffer layer under non-vacuum condition is disclosed. A coating layer is formed on the back electrode layer on the substrate by mixing the slurry on the back electrode layer, and the coating layer formed on the back electrode layer is densified by a densification device after initially dried, and then a primary selenization/sulfurization reaction process is carried out to form a primary CIGSSe layer, and then a thermal process is carried out to improve the lattice match of the primary CIGSSe layer, and then an impurity cleaning process is carried out by using potassium cyanide or bromide to remove the impurities of cuprous selenide and copper sulfide, and then a rear-stage selenization/sulfurization reaction process is carried out to produce the required rear-stage CIGSSe absorption layer. Finally, a CdS buffer layer is formed on the CIGSSe absorption layer by a chemical bath deposition method.

Method and system for forming copper indium gallium sulfur selenide absorption layer and cadmium sulfide buffer layer under non-vacuum condition

A method for preparing a sol-gel solution is provided. During a first stage mixture preparation process, a metal compound mixture is obtained by mixing compounds of Cu, In, Ga, and Se, a diluting dispersant is obtained by adding a diluent into a dispersant, a stabilizing adhesive is obtained by mixing a stabilizer, a leveling agent, and an adhesive together, an anti-freezing coagulant is obtained by mixing an anti-freezer with a retarding coagulant, and a metallic reducing agent is obtained by mixing a reducing agent, a metal complexing agent with a metal abstracting solvent. Then, the metal compound mixture, the diluting dispersant, the stabilizing adhesive, the anti-freezing coagulant, and the metallic reducing agent are mixed, heated and stirred, and then cooled down to obtain a sol-gel solution. The sol-gel solution can be provided for the ink coating technology for configuring the CIGS light absorbing layer of the CIGS solar cell.

Method for preparing sol-gel solution for CIGS solar cell

A coating method for preparing a light absorbing layer of a solar cell is provided. In a non-vacuum environment, an ultrasonic vibrating mixer is employed to mix a CIGS mixture with a mixing fluid to obtain a CIGS coating material. The CIGS coating material is then uniformly coated on a molybdenum (Mo) layer which is driven by a conveyor device, so as to form a CIGS coating material layer having a uniform thickness on the Mo layer. An infrared ray (IR) heating lamp is then used to dry the CIGS coating material layer for removing residue of the mixing fluid remained in the CIGS coating material layer. In such a way, a CIGS light absorbing layer adapted for absorbing a solar energy and converting the absorbed solar energy into an electric energy is obtained. The CIGS light absorbing layer can be then used for fabricating a CIGS solar cell.

Growing community of inventors

Taoyuan, Taiwan

Chuan-Lung Chuang