E Ink Holdings Inc.

Chuan-I Huang

Chin-Wen Lin

Ted-Hong Shinn

Chung-Chin Huang

Sung-Hui Huang

Hsing-Yi Wu

Ted Hong Shinn

A metal oxide semiconductor structure, the structure including: a substrate; a gate electrode, deposited on the substrate; a gate insulation layer, deposited over the gate electrode and the substrate; an IGZO layer, deposited on the gate insulation layer and functioning as a channel; a source electrode, deposited on the gate insulation layer and being at one side of the IGZO layer; a drain electrode, deposited on the gate insulation layer and being at another side of the IGZO layer; a first passivation layer, deposited over the source electrode, the IGZO layer, and the drain electrode; a second passivation layer, deposited over the first passivation layer; and an opaque resin layer, deposited over the source electrode, the second passivation layer, and the drain electrode.

Metal oxide semiconductor structure

A metal oxide semiconductor structure and a production method thereof, the structure including: a substrate; a gate electrode, deposited on the substrate; a gate insulation layer, deposited over the gate electrode and the substrate; an IGZO layer, deposited on the gate insulation layer and functioning as a channel; a source electrode, deposited on the gate insulation layer and being at one side of the IGZO layer; a drain electrode, deposited on the gate insulation layer and being at another side of the IGZO layer; a first passivation layer, deposited over the source electrode, the IGZO layer, and the drain electrode; a second passivation layer, deposited over the first passivation layer; and an opaque resin layer, deposited over the source electrode, the second passivation layer, and the drain electrode.

Metal oxide semiconductor structure and production method thereof

A compensation method for a light emitting diode (LED) circuit including a first transistor, a second transistor, a capacitor, and a LED is illustrated. A first end as a control end of the first transistor is connected to one end of the second transistor and the capacitor, and a second end of the first transistor is connected to the LED. A width to length (W/L) ratio of the second transistor is less than one. An initial control voltage is applied to a control end of the second transistor, and the current output voltage of the LED is correspondingly measured. If a difference between the current output voltage and an initial output voltage exceeds a predetermined value, a compensation voltage, which is a summation of the initial control voltage and the difference, is applied to the control end of the second transistor.

Compensation method and apparatus for light emitting diode circuit

An electronic paper structure is disclosed, which includes a hard substrate, a flexible substrate, at least one magnetic device for fastening the flexible substrate on the hard substrate temporally, a drive substrate formed on the flexible substrate, an electronic paper display layer formed on the drive substrate, and a protect layer formed on the electronic paper display layer. An electronic paper fabricating method using the same is also disclosed.

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Taipei, Taiwan

Chuan-I Huang