Taiwan Semiconductor Manufacturing Comp. Ltd.

Chuan-Hui Shen

Sung-Li Wang

Shuen-Shin Liang

Kuan-Kan Hu

Chia-Hung Chu

Hsu-Kai Chang

Po-Chin Chang

Pinyen Lin

Yuting Cheng

Lin-Yu Huang

Liang-Yin Chen

Chia-Cheng Chen

Cheng-Wei Chang

Chun-Hung Wu

Ken-Yu Chang

Wei-Yip Loh

Hung-Yi Huang

Hong-Mao Lee

Yan-Ming Tsai

Yi-Ying Liu

Tsun-Jen Chan

Jhih-Rong Huang

Cheng-Wei Lian

Kao-Feng Lin

Tzu-Pei Chen

Harry Chien

Hung Pin Lu

Min-Chiang Chuang

Szu-Hsian Lee

A semiconductor device includes a source/drain portion, a metal silicide layer disposed over the source/drain portion, and a transition layer disposed between the source/drain portion and the metal silicide layer. The transition layer includes implantation elements, and an atomic concentration of the implantation elements in the transition layer is higher than that in each of the source/drain portion and the metal silicide layer so as to reduce a contact resistance between the source/drain portion and the metal silicide layer. Methods for manufacturing the semiconductor device are also disclosed.

Semiconductor device and method for manufacturing the same

A semiconductor device includes a semiconductor substrate, an epitaxial structure, a silicide structure, a conductive structure, and a protection segment. The epitaxial structure is disposed in the semiconductor substrate. The silicide structure is disposed in the epitaxial structure. The conductive structure is disposed over the silicide structure and is electrically connected to the silicide structure. The protection segment is made of metal nitride, is disposed over the silicide structure, and is disposed between the silicide structure and the conductive structure.

Semiconductor device with conductive liners over silicide structures and method of making the semiconductor device

A titanium precursor is used to selectively form a titanium silicide (TiSi) layer in a semiconductor device. A plasma-based deposition operation is performed in which the titanium precursor is provided into an opening, and a reactant gas and a plasma are used to cause silicon to diffuse to a top surface of a transistor structure. The diffusion of silicon results in the formation of a silicon-rich surface of the transistor structure, which increases the selectivity of the titanium silicide formation relative to other materials of the semiconductor device. The titanium precursor reacts with the silicon-rich surface to form the titanium silicide layer. The selective titanium silicide layer formation results in the formation of a titanium silicon nitride (TiSiN) on the sidewalls in the opening, which enables a conductive structure such as a metal source/drain contact to be formed in the opening without the addition of another barrier layer.

Conductive structures and methods of formation

Growing community of inventors

Hsinchu, Taiwan

Chuan-Hui Shen