Qualcomm Incorporated

Chuan-Hsing Chen

Ye Lu

Yun Yue

Bin Yang

Lixin Ge

Phanikumar Konkapaka

Chuan-cheng Cheng

Ken Liao

A metal-oxide-semiconductor (MOS) device for radio frequency (RF) applications may include a guard ring. The guard ring may surround the MOS device and at least one other MOS device. The MOS device may further include a level zero contact layer coupled to a first interconnect layer through level zero interconnects and vias. The first interconnect layer may be for routing to the MOS device.

Enhanced active and passive devices for radio frequency (RF) process and design technology

A metal oxide semiconductor (MOS) varactor includes a first diffusion region of a first polarity and a second diffusion region of the first polarity on a semiconductor substrate. The MOS varactor further includes a channel between the first diffusion region and the second diffusion region on the semiconductor substrate. The channel has a surface dopant concentration less than 4e10.

Well doping for metal oxide semiconductor (MOS) varactor

A short-channel metal oxide semiconductor varactor may include a source region of a first polarity having a source via contact. The varactor may further include a drain region of the first polarity having a drain via contact. The varactor may further include a channel region of the first polarity between the source region and the drain region. The channel region may include a gate. The varactor may further include at least one self-aligned contact (SAC) on the gate and between the source via contact and the drain via contact.

Self-aligned contact (SAC) on gate for improving metal oxide semiconductor (MOS) varactor quality factor

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San Diego, CA, United States of America

Chuan-Hsing Chen