United Microelectronics Corp.

Chuan-Hsien Fu

Chien-Li Kuo

Chun-Liang Hou

Shu-Ru Wang

Yu-Lin Wang

Chuen-Huei Yang

Yun-San Huang

Chia-Chun Sun

An inverter structure is disclosed. The inverter structure includes an NMOS transistor and a PMOS transistor. Preferably, the NMOS transistor includes an n-type gate electrode and an n-type source/drain region, and the PMOS transistor includes a p-type gate electrode and a p-type source/drain region. Specifically, the n-type gate electrode and the p-type gate electrode are physically separated and electrically connected by a conductive contact.

Inverter structure and method for fabricating the same

The invention provides a mask pattern. The mask pattern comprises at least a continuous pattern. Each of the continuous patterns has a first pattern, a second pattern and a set of assistance patterns. The assistant patterns are located between the first pattern to the second pattern. The first pattern, the assistant patterns and the second pattern together form a closed opening.

Mask pattern and method for forming the same

Growing community of inventors

Taipei County, Taiwan

Chuan-Hsien Fu