United Microelectronics Corp.

Chuan-Hsi Liu

Kuo-Tai Huang

Tung-Ming Pan

Ming-Tsan Lee

Yu-Yin Lin

Hsiu-Shan Lin

A method of determining reliability of semiconductor products. The method comprises providing a semiconductor wafer, which comprises a plurality of MOS transistors formed on its surface, and placing the semiconductor wafer in an environment of a stress temperature during a testing time period. The MOS transistor is simultaneously stressed with a stress voltage. A plurality of testing points are defined in the testing time, and the threshold voltage shift of the MOS transistor is measured at each testing point for establishing a group of experimental data. Finally, a relationship model of threshold voltage shift (&Dgr;V ) vs. time (t) is provided, and the group of experimental data and the relationship model are used to depict a relation curve for predicting the threshold voltage shift of the MOS transistor when exceeding the testing time.

Method of determining reliability of semiconductor products

Transmission line pulse method for measuring electrostatic discharge voltages

This invention relates to a method for forming a gate dielectric layer, and, more particularly, to a method for treating a base oxide layer by using a remote plasma nitridation procedure and a thermal annealing treatment in turn to form the gate dielectric layer. The first step of the present invention is to form a base oxide layer on a substrate of a wafer. The base oxide layer can be formed using any kind of method. Then nitrogen ions are introduced into the base oxide layer using the remote plasma nitridation procedure to form a remote plasma nitrided oxide layer. Finally, the wafer is placed in a reaction chamber which comprises oxygen (O ) or nitric monoxide (NO) to treat the remote plasma nitrided oxide layer using the thermal annealing procedure and the gate dielectric layer of the present invention is formed.

Method for fabricating a gate dielectric layer

Growing community of inventors

Hsin-Chu, Taiwan

Chuan-Hsi Liu