X-fab Semiconductor Foundries Ag

Chuan Chien Tan

Brendan Toner

Xuezhou Cao

Fred Fang

A bipolar junction transistor is provided with an emitter region, an oxide region, a base region and a collector region. The base region is located between the emitter region and the oxide region and has a junction with the emitter region and an interface with the oxide region. An at least partially conductive element such as metal or silicon is positioned to overlap with at least part of the junction between the base region and the emitter region, thereby forming a gate. The gate also overlaps with at least part of the interface between the base region and the oxide region. When a suitable bias voltage is applied to the gate, the gain of the transistor can be increased.

Growing community of inventors

Kuching, Malaysia

Chuan Chien Tan