Taiwan Semiconductor Manufacturing Comp. Ltd.

Chuan-An Cheng

Ming-Fa Chen

Sung-Feng Yeh

Chao-Wen Shih

Tzuan-Horng Liu

Chih-Chia Hu

Min-Chien Hsiao

Cheng-Feng Chen

A method includes bonding a tier-1 device die to a carrier, forming a first gap-filling region to encapsulate the tier-1 device die, forming a first redistribution structure over and electrically connected to the tier-1 device die, and bonding a tier-2 device die to the tier-1 device die. The tier-2 device die is over the tier-1 device die, and the tier-2 device die extends laterally beyond a corresponding edge of the tier-1 device die. The method further includes forming a second gap-filling region to encapsulate the tier-2 device die, removing the carrier, and forming a through-dielectric via penetrating through the first gap-filling region. The through-dielectric via is overlapped by, and is electrically connected to, the tier-2 device die. A second redistribution structure is formed, wherein the first redistribution structure and the second redistribution structure are on opposing sides of the tier-1 device die.

Through-dielectric vias for direct connection and method forming same

In a method, a wafer is bonded to a first carrier. The wafer includes a semiconductor substrate, and a first plurality of through-vias extending into the semiconductor substrate. The method further includes bonding a plurality of chips over the wafer, with gaps located between the plurality of chips, performing a gap-filling process to form gap-filling regions in the gaps, bonding a second carrier onto the plurality of chips and the gap-filling regions, de-bonding the first carrier from the wafer, and forming electrical connectors electrically connecting to conductive features in the wafer. The electrical connectors are electrically connected to the plurality of chips through the first plurality of through-vias.

Multi-level stacking of wafers and chips

A semiconductor structure includes a stacked structure. The stacked structure includes a first semiconductor die and a second semiconductor die. The first semiconductor die includes a first semiconductor substrate having a first active surface and a first back surface opposite to the first active surface. The second semiconductor die is over the first semiconductor die, and includes a second semiconductor substrate having a second active surface and a second back surface opposite to the second active surface. The second semiconductor die is bonded to the first semiconductor die through joining the second active surface to the first back surface at a first hybrid bonding interface along a vertical direction. Along a lateral direction, a first dimension of the first semiconductor die is greater than a second dimension of the second semiconductor die.

Semiconductor structure and method manufacturing the same

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Hsinchu, Taiwan

Chuan-An Cheng