Samsung Electronics Co., Ltd.

Chu Young Cho

Dong Joon Kim

Yong Chun Kim

Dong Yul Lee

Seong Ju Park

Min Ki Kwon

Seung Beom Seo

Myung Goo Cheong

Chang Hee Cho

Disclosed is a semiconductor light emitting device. The semiconductor light emitting device includes an n-type semiconductor layer, a p-type semiconductor layer, and an active layer disposed therebetween, and a surface plasmon layer disposed between the active layer and at least one of the n-type and p-type semiconductor layers, including metallic particles and an insulating material, and including a conductive via for electrical connection between the active layer and the at least one of the n-type and p-type semiconductor layers, wherein the metallic particles are enclosed by the insulating material to be insulated from the at least one of the n-type and p-type semiconductor layers. The semiconductor light emitting device can achieve enhanced emission efficiency by using surface plasmon resonance. Using the semiconductor light emitting device, the diffusion of a metal employed for surface plasmon resonance into the active layer can be minimized.

Semiconductor light emitting device having surface plasmon layer

Growing community of inventors

Gwangju, South Korea

Chu Young Cho