Toppoly Optoelectronics Corporation

Industrial Technology Research Institute

Tpo Displays Corporation

Chu-Jung Shih

I-Min Lu

I-Wei Wu

Gwo-Long Lin

Hsin-Ming Chen

Yaw-Ming Tsai

Shyuan-Jeng Ho

Gwo-long Lin

An active layer of a P-type low temperature polysilicon thin film transistor and a bottom electrode of a storage capacitor are first formed. Then, a P-type source/drain is formed and the bottom electrode is doped with dopants. A gate insulator, a gate electrode, a capacitor dielectric, and a top electrode are thereafter formed. Finally, a source interconnect, a drain interconnect, and a pixel electrode of the liquid crystal display are formed.

Method of forming a liquid crystal display

The present invention provides a method of forming a liquid crystal display (LCD). Active layers of N-type and P-type low temperature polysilicon thin film transistors and a bottom electrode of a storage capacitor are formed first. Then a N-type source/drain is formed and the bottom electrode is doped with dopants. A gate insulator, a gate electrode, a capacitor dielectric, and a top electrode are thereafter formed. After that, a P-type source/drain is formed. Finally, a source interconnect, a drain interconnect, and a pixel electrode of the liquid crystal display are formed.

A method of fabricating a polysilicon film by an excimer laser annealing process is introduced. First, an amorphous silicon film is deposited on a substrate composed of glass. The amorphous silicon film includes a first region, which is located in the center, with a first thickness, and a second region, which is located in the periphery, with a slant sidewall. The thickness of the amorphous silicon film is measured so as to obtain the profile of the sidewall in the second region. According to the profile of the sidewall, a pre-cursor region is determined for performing an excimer laser annealing process wherein a second thickness in the boundary of the pre-curser regionis smaller than the first thickness so as to increase area of produced polysilicon film.

Method of fabricating polysilicon film by excimer laser annealing process

A six mask-steps method for fabricating liquid crystal display is described. A driving area and a pixel area are defined by a first mask step. Gates on the driving/pixel area and upper electrodes of capacitors on the pixel area are defined by a second mask step. Then, using the gates and the upper electrodes as a mask, a source/drain, channel region and lower electrode are formed in the driving/pixel area by an ion-doping process. A second insulation layer is formed and covers the insulation substrate. A plurality of first openings is formed by the third mask step and the gate and the source/drain are exposed. A second conductive layer is formed and covers the second insulation layer and the first opening is filled. Then, the second conductive layer is patterned, and a source/drain line is formed and contacts electrically with the source/drain by the fourth mask step. A dielectric layer is formed and covers the second insulation layer and the second conductive layer; the dielectric layer has a planar surface. A second opening is formed by the fifth mask step and the drain line on the pixel area is exposed. Finally, a pixel electrode is defined by the sixth mask step and contacts electrically with the drain line.

Method for fabricating liquid crystal display

A method for fabricating a thin film transistor array and driving circuit comprising the steps of: providing a substrate; patterning a polysilicon layer and an N&plus; thin film over the substrate to form a plurality of islands; patterning the islands to form P&plus; doped regions; patterning out source/drain terminals and the lower electrode of a storage capacitor; etching back the N&plus; thin film; patterning out a gate and the upper electrode of the storage capacitor and patterning a passivation layer and a conductive layer to form pixel electrodes and a wiring layout.

Method for fabricating thin film transistor array and driving circuit

A laser scanning system suitable for annealing applications is described. The problem of keeping the window (through which the laser shines into the system) clean, even though the laser ejects a considerable amount of debris, has been solved by inserting a moveable shutter close to the window between it and the substrate. The center portion of the shutter is an insert of optical quality quartz that is just large enough to allow the laser beam to pass through unimpeded and undiverted. By moving the beam and the shutter in concert it is ensured that the beam always passes through the insert. Most of the debris ejected by the laser as a side effect of its operation is trapped on the shutter. Relatively little material ends up on the quartz insert but when sufficient has accumulated there, the insert can be replaced at much lower cost than replacing the window. By moving the beam back and forth together with movement of the substrate, the entire area of the film on the substrate may be scanned by the beam. In a second embodiment, the quartz insert is omitted and an open slit left in its place. With this arrangement debris will eventually accumulate on the window but at a greatly reduced rate relative to an unprotected window.

Growing community of inventors

Taipei, Taiwan

Chu-Jung Shih