International Business Machines Corporation

Globalfoundries Inc.

University of Massachusetts

Samsung Electronics Co., Ltd.

USA As Represented by Secretary of the Navy

Karlsruher Institut F&#xfc;r Technologie

Taiwan Bluestone Technology Ltd.

Other

Chartered Semiconductor Manufacturing Ltd (corporation)

Universidade Federal Do Rio Grande Do Sul-ufrgs

Universidade Federal Do Rio Grande Do Sui-ufrgs

Christos Dimitrios Dimitrakopoulos

Alfred Grill

Jeehwan Kim

Dirk Pfeiffer

Hongsik Park

Timothy James McArdle

Guy M Cohen

Jack Oon Chu

Sampath Purushothaman

Robert L Wisnieff

Stephen McConnell Gates

Deborah A Neumayer

Devendra K Sadana

Keith E Fogel

Ali Afzali-Ardakani

Son Van Nguyen

Joshua T Smith

Griselda Bonilla

John Albrecht Ott

Bruce Kenneth Furman

James Bowler Hannon

Byungha Shin

Satyanarayana Venkata Nitta

Vincent James McGahay

Chun-Yung Sung

Ioannis Kymissis

Teresita Ordonez Graham

Marcus Oliver Freitag

Qinghuang Lin

Damon B Farmer

Aaron Daniel Franklin

Cherie Renee Kagan

Yu-Ming Lin

Robert B Laibowitz

Laura Louise Kosbar

Can Bayram

Satoshi Oida

Peter Richard Duncombe

Tricia Lynn Breen

Stephen W Bedell

Daniel C Edelstein

Shom Ponoth

Katherine Lynn Saenger

Matthew Earl Colburn

Sanjay C Mehta

Kevin Shawn Petrarca

Marie Angelopoulos

Kuen-Ting Shiu

Thomas M Shaw

Xiao Hu Liu

Phaedon Avouris

David Brian Mitzi

Christos J Georgiou

Shahab Siddiqui

Augustin J Hong

Shui-Chih Alan Lien

Michael Wayne Lane

Darryl D Restaino

Michael Engel

Kam Leung Lee

Mathias B Steiner

Nirupama Chakrapani

Ralph Krupke

Debra Jane Mascaro

Andre R Muniz

Dimitrios Maroudas

Tak H Ning

Judson Robert Holt

Paul Michael Solomon

Jeffrey Donald Gelorme

Jae Hun Kim

Terry Allen Spooner

Jane M Shaw

Jean-Olivier Plouchart

David Robert Medeiros

Alessandro Cesare Callegari

Eric Gerhard Liniger

Wenjuan Zhu

Johnny Widodo

David Kurt Gaskill

Eric C Harley

Matthew W Stoker

Patrick Roland Lucien Malenfant

Mark S Chace

Sarah L Perry

Konstantinos Chondroudis

Shuo Sui

D Kurt Gaskill

Ali Afzali Ardakani

Horst Henning Winter

Robert L Wisnierff

Chun-yung Sung

Satyanarayana V Nittta

Yuxi Wang

An electronic device includes a spreading layer and a first contact layer formed over and contacting the spreading layer. The first contact layer is formed from a thermally conductive crystalline material having a thermal conductivity greater than or equal to that of an active layer material. An active layer includes one or more III-nitride layers. A second contact layer is formed over the active layer, wherein the active layer is disposed vertically between the first and second contact layers to form a vertical thin film stack.

Thin film wafer transfer and structure for electronic devices

An article of manufacture includes a first graphene layer, a second graphene layer over the first graphene layer, the second graphene layer oriented at a first interlayer twist angle with respect to the first graphene layer and bonded by interlayer covalent bonds to the first graphene layer, and a third graphene layer over the second graphene layer, the third graphene layer oriented at a second interlayer twist angle with respect to the second graphene layer and bonded by interlayer covalent bonds to the second graphene layer. A multi-layer graphene article includes at least three graphene layers, each graphene layer being oriented at an interlayer twist angle with respect to an adjacent graphene layer and bonded by interlayer covalent bonds to the adjacent graphene layer.

Multilayer graphene structures with enhanced mechanical properties resulting from deterministic control of interlayer twist angles and chemical functionalization

This invention provides microfluidic devices with graphene films as architectural materials and methods of fabrication and use thereof in X-ray analysis.

Microfluidic devices having top and bottom layers of graphene and a middle layer with a patterned cavity

A method of exfoliating graphite into graphene uses a sequence of flow and sonication on graphite suspensions. Graphite particles after intense mixing/grinding in a liquid are found to be altered, graphite having curled-up edges, which increases its sensitivity to ultrasound. Quadrupled graphene yield is achieved through introducing chaotic flow pretreatment.

Fast production of high quality graphene by liquid phase exfoliation

Hall effect devices and field effect transistors are formed incorporating a carbon-based nanostructure layer such as carbon nanotubes and/or graphene with a sacrificial metal layer formed there over to protect the carbon-based nanostructure layer during processing.

Carbon nanostructure device fabrication utilizing protect layers

A method for forming nanostructures includes bonding a flexible substrate to a crystalline semiconductor layer having a two-dimensional material formed on a side opposite the flexible substrate. The crystalline semiconductor layer is stressed in a first direction to initiate first cracks in the crystalline semiconductor layer. The first cracks are propagated through the crystalline semiconductor layer and through the two-dimensional material. The stress of the crystalline semiconductor layer is released to provide parallel structures including the two-dimensional material on the crystalline semiconductor layer.

Self-formation of high-density arrays of nanostructures

A method for transfer of a two-dimensional material includes forming a spreading layer of a two-dimensional material on a first substrate. The spreading layer has at least one monolayer. A stressor layer is formed on the spreading layer. The stressor layer is configured to apply stress to a closest monolayer of the spreading layer. The closest monolayer is exfoliated by mechanically splitting the spreading layer wherein at least the closest monolayer remains on the stressor layer. The at least one monolayer is stamped against a second substrate to adhere remnants of the two-dimensional material on the at least one monolayer to the second substrate to provide a single monolayer on the stressor layer. The single monolayer is transferred to a third substrate.

Formation of large scale single crystalline graphene

A method of forming an epitaxial semiconductor material that includes forming a graphene layer on a semiconductor and carbon containing substrate and depositing a metal containing monolayer on the graphene layer. An epitaxial layer of a gallium containing material is formed on the metal containing monolayer. A layered stack of the metal containing monolayer and the epitaxial layer of gallium containing material is cleaved from the graphene layer that is present on the semiconductor and carbon containing substrate.

Gallium nitride material and device deposition on graphene terminated wafer and method of forming the same

Interconnect structures including a graphene cap located on exposed surfaces of a copper structure are provided. In some embodiments, the graphene cap is located only atop the uppermost surface of the copper structure, while in other embodiments the graphene cap is located along vertical sidewalls and atop the uppermost surface of the copper structure. The copper structure is located within a dielectric material.

Graphene cap for copper interconnect structures

A method for fabricating a photovoltaic device includes applying a diblock copolymer layer on a substrate and removing a first polymer material from the diblock copolymer layer to form a plurality of distributed pores. A pattern forming layer is deposited on a remaining surface of the diblock copolymer layer and in the pores in contact with the substrate. The diblock copolymer layer is lifted off and portions of the pattern forming layer are left in contact with the substrate. The substrate is etched using the pattern forming layer to protect portions of the substrate to form pillars in the substrate such that the pillars provide a radiation absorbing structure in the photovoltaic device.

Uniformly distributed self-assembled cone-shaped pillars for high efficiency solar cells

Semiconductor structures including parallel graphene nanoribbons or carbon nanotubes oriented along crystallographic directions are provided from a template of silicon carbide (SiC) fins or nanowires. The SiC fins or nanowires are first provided and then graphene nanoribbons or carbon nanotubes are formed on the exposed surfaces of the fin or the nanowires by annealing. In embodiments in which closed carbon nanotubes are formed, the nanowires are suspended prior to annealing. The location, orientation and chirality of the graphene nanoribbons and the carbon nanotubes that are provided are determined by the corresponding silicon carbide fins and nanowires from which they are formed.

Graphene nanoribbons and carbon nanotubes fabricated from SiC fins or nanowire templates

A semiconductor device includes a substrate having at least one electrically insulating portion. A first graphene electrode is formed on a surface of the substrate such that the electrically insulating portion is interposed between a bulk portion of the substrate and the first graphene electrode. A second graphene electrode formed on the surface of the substrate. The electrically insulating portion of the substrate is interposed between the bulk portion of the substrate and the second graphene electrode. The second graphene electrode is disposed opposite the first graphene electrode to define an exposed substrate area therebetween.

Solution-assisted carbon nanotube placement with graphene electrodes

A method for transfer of a two-dimensional material includes forming a spreading layer of a two-dimensional material on a substrate, the spreading layer having a monolayer. A stressor layer is formed on the spreading layer, and the stressor layer is configured to apply stress to a closest monolayer of the spreading layer. The closest monolayer is exfoliated by mechanically splitting the spreading layer wherein the closest monolayer remains on the stressor layer.

Wafer scale epitaxial graphene transfer

Growing community of inventors

Somers, NY, United States of America

Christos Dimitrios Dimitrakopoulos