Ibeam Materials, Inc.

Government of the United States of America, As Represented by the Secretary of Commerce

Christopher Yung

Vladimir Matias

John Henry Lehman

Nathan A Tomlin

Daniel R Schmidt

Jeeseong Hwang

Kimberly Ann Briggman

A multilayer structure including a hexagonal epitaxial layer, such as GaN or other group III-nitride (III-N) semiconductors, a <111>oriented textured layer, and a non-single crystal substrate, and methods for making the same. The textured layer has a crystalline alignment preferably formed by the ion-beam assisted deposition (IBAD) texturing process and can be biaxially aligned. The in-plane crystalline texture of the textured layer is sufficiently low to allow growth of high quality hexagonal material, but can still be significantly greater than the required in-plane crystalline texture of the hexagonal material. The IBAD process enables low-cost, large-area, flexible metal foil substrates to be used as potential alternatives to single-crystal sapphire and silicon for manufacture of electronic devices, enabling scaled-up roll-to-roll, sheet-to-sheet, or similar fabrication processes to be used. The user is able to choose a substrate for its mechanical and thermal properties, such as how well its coefficient of thermal expansion matches that of the hexagonal epitaxial layer, while choosing a textured layer that more closely lattice matches that layer. Electronic devices such as LEDs can be manufactured from such structures. Because the substrate can act as both a reflector and a heat sink, transfer to other substrates, and use of external reflectors and heat sinks, is not required, greatly reducing costs. Large area devices such as light emitting strips or sheets may be fabricated using this technology.

Group-III nitride devices and systems on IBAD-textured substrates

A photoacoustic photon meter includes: a photoacoustic generative array including carbon nanotubes disposed in a photoacoustic generating pattern, such that the carbon nanotubes: receive photons comprising optical energy, and produce thermal energy from the optical energy; and a superstratum including a thermally expandable elastomer on which the photoacoustic generative array is fixedly disposed in position on the superstratum to spatially conserve the photoacoustic generating pattern, and such that the superstratum: is optically transparent to the photons; receives the thermal energy from the photoacoustic generative array; expands and contracts in response to receipt of the thermal energy; and produces photoacoustic pressure waves in response to the expansion and contraction, the photoacoustic pressure waves including a photoacoustic intensity and photoacoustic frequency that are based upon an amount of optical pressure applied to the carbon nanotubes by the photons, a spatial photon fluence of the photons, or a spectral photon fluence of photons.

Photoacoustic photon meter and process for measuring photon fluence

A recessed carbon nanotube article includes a base; a substrate disposed on the base; wells disposed in the substrate and bounded by the base and a substrate wall; and a carbon nanotube element disposed in individual wells and including vertically aligned carbon nanotubes such that a longitudinal length of the vertically aligned carbon nanotubes is less than a depth of the well in which the carbon nanotube element is disposed. A recessed carbon nanotube bolometer includes a base; a substrate on the base; radiation wells in the substrate; carbon nanotubes in the wells; thermistors and heaters on the membrane arranged as an electrical substitution member. A process for making a recessed carbon nanotube bolometer includes forming a substrate on a base; forming a radiation well in the substrate; forming carbon nanotubes in the well; disposing a cover on the wells; and forming a thermistor and a heater on the base.

Recessed carbon nanotube article and method for making same

A multilayer structure including a hexagonal epitaxial layer, such as GaN or other group III-nitride (III-N) semiconductors, a &#x3c;111&#x3e; oriented textured layer, and a non-single crystal substrate, and methods for making the same. The textured layer has a crystalline alignment preferably formed by the ion-beam assisted deposition (IBAD) texturing process and can be biaxially aligned. The in-plane crystalline texture of the textured layer is sufficiently low to allow growth of high quality hexagonal material, but can still be significantly greater than the required in-plane crystalline texture of the hexagonal material. The IBAD process enables low-cost, large-area, flexible metal foil substrates to be used as potential alternatives to single-crystal sapphire and silicon for manufacture of electronic devices, enabling scaled-up roll-to-roll, sheet-to-sheet, or similar fabrication processes to be used. The user is able to choose a substrate for its mechanical and thermal properties, such as how well its coefficient of thermal expansion matches that of the hexagonal epitaxial layer, while choosing a textured layer that more closely lattice matches that layer. Electronic devices such as LEDs can be manufactured from such structures. Because the substrate can act as both a reflector and a heat sink, transfer to other substrates, and use of external reflectors and heat sinks, is not required, greatly reducing costs. Large area devices such as light emitting strips or sheets may be fabricated using this technology.

A multilayer structure including a hexagonal epitaxial layer, such as GaN or other group III-nitride (III-N) semiconductors, a &#x3c;111&#x3e; oriented textured layer, and a non-single crystal substrate, and methods for making the same. The textured layer has a crystalline alignment preferably formed by the ion-beam assisted deposition (IBAD) texturing process and can be biaxially aligned. The in-plane crystalline texture of the textured layer is sufficiently low to allow growth of high quality hexagonal material, but can still be significantly greater than the required in-plane crystalline texture of the hexagonal material. The IBAD process enables low-cost, large-area, flexible metal foil substrates to be used as potential alternatives to single-crystal sapphire and silicon for manufacture of electronic devices, enabling scaled-up roll-to-roll, sheet-to-sheet, or similar fabrication processes to be used. The user is able to choose a substrate for its mechanical and thermal properties, such as how well its coefficient of thermal expansion matches that of the hexagonal epitaxial layer, while choosing a textured layer that more closely lattice matches that layer.

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Louisville, CO, United States of America

Christopher Yung