Electrophotonic-ic Inc.

Artic Photonics Inc.

Bookham Technology Limited

Oclaro Technology Limited

Onechip Photonics Inc.

Christopher Watson

Yury Logvin

Kirill Pimenov

Fang Wu

Valery Tolstikhin

Yongbo Tang

Benoit Reid

Ian B Betty

Marcel Boudreau

A VCSEG-DFB laser, fully compatible with MGVI design and manufacturing methodologies, for single growth monolithic integration in multi-functional PICs is presented. It comprises a laser PIN structure, in mesa form, etched from upper emitter layer top surface through the active, presumably MQW, gain region, down to the top surface of the lower emitter. Lower electrical contacts sit adjacent the mesa disposed on the lower emitter layer with upper strip contacts disposed atop the upper emitter layer on the mesa top. An SEG is defined/etched from mesa top surface, between the upper strip contacts, through upper emitter layer down to or into the SCH layers. Vertical confinement is provided by the SCH structure and the lateral profile in the bottom portion of the mesa provides lateral confinement. The guided mode interacts with the SEG by the vertical tail penetrating the SEG and evanescent field coupling to the SEG.

Vertically-coupled surface-etched grating DFB laser

The invention describes an integrated photonics platform comprising a plurality of at least three vertically-stacked waveguides which enables light transfer from one waveguide of the photonic structure into another waveguide by means of controlled tunneling method. The light transfer involves at least three waveguides wherein light power flows from initial waveguide into the final waveguide while tunneling through the intermediate ones. As an exemplary realization of the controlled tunneling waveguide integration, the invention describes a photonic integrated structure consisting of laser guide as upper waveguide, passive guide as middle waveguide, and modulator guide as lower waveguides. Controlled tunneling is enabled by the overlapped lateral tapers formed on the same or different vertical waveguide levels. In the further embodiments, the controlled tunneling platform is modified to implement wavelength-(de)multiplexing, polarization-splitting and beam-splitting functions.

Controlled tunneling waveguide integration (CTWI) for effective coupling between different components in a photonic chip

Disclosed herein is a monolithically integrated coherent receiver chip which has a geometric arrangement of the on-chip components that significantly improves the performance and the manufacturability of a coherent receiver module for Dual Polarization Quadrature Phase Shift Keyed (DP-QPSK) applications and other optical coherent detection systems. The coherent receiver chip comprises two optical hybrids, three optical inputs and eight electrical outputs with the two optical hybrids oriented perpendicular to the optical inputs and the electrical outputs which are widely spaced and arranged in a co-linear fashion that simplifies module design and assembly. The proposed geometric arrangement also replaces any optical waveguide crossings with vertical electrical-optical crossings and includes electrical transmissions which are used to minimize channel skew. The proposed configuration also has the additional benefit of improved thermal management by separating the module's trans-impedance amplifiers.

Integrated coherent receiver having a geometric arrangement for improved device efficiency

In a ridge waveguide serial interferometer mode conversion is induced by a first mode conversion section, a phase difference between modes is introduced by propagation over a length of waveguide and optical interference is produced following further mode conversion induced in a second mode conversion section. The first mode conversion section has a first radius of curvature, which is equal to a second radius of curvature of the second mode conversion section. The ridge waveguide interferometer advantageously provides an equal phase dependency as a function of temperature.

Ridge waveguide serial interferometers

The invention describes an integrated-photonics arrangement, implementable in a multi-guide vertical integration (MGVI) structure composed from III-V semiconductors and grown in one epitaxial growth run, allowing for the integration of semiconductor optical amplifier (SOA) and PIN photodetector (PIN) structures within a common wavelength-designated waveguide of the plurality of the vertically integrated wavelength-designated waveguides forming the MGVI structure. The integration includes a wavelength filter integrated between the SOA and PIN to reduce noise within the PIN arising from ASE generated by the SOA. In exemplary embodiments of the invention, the wavelength filter is integrated into MGVI structure either within a common wavelength designated waveguide or within the wavelength-designated waveguide. Further in other embodiments the wavelength filter is provided by a thin-film filter abutting a facet of the integrated-photonics arrangement wherein optical signals are coupled by optical waveguides and/or additional optical elements such as a multimode interference device.

Waveguide optically pre-amplified detector with passband wavelength filtering

An optical signal is produced from a direct modulation resonant cavity device, such as directly-modulated diode laser having an electrode divided into multiple sections. Each section is driven with an electrical waveform such that a time delay is introduced between sections so as to ensure that the different sections reach their peaks at slightly different times.

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Ottawa, Canada

Christopher Watson