University of Michigan

National Technology & Engineering Solutions of Sandia, LLC

University of California

Christopher W Berry

Mona Jarrahi

Christopher Nordquist

Matthew G Blain

Peter Lukas Wilhelm Maunz

Paul J Resnick

Ning Wang

Jonathan David Sterk

Mehmet Unlu

Shenglin Li

Shang-Hua Yang

John F Rembetski

Mohammed Reza Mahmoodi Hashemi

A photoconductive device that includes a semiconductor substrate, an antenna assembly, and a photoconductive assembly with one or more plasmonic contact electrodes. The photoconductive assembly can be provided with plasmonic contact electrodes that are arranged on the semiconductor substrate in a manner that improves the quantum efficiency of the photoconductive device by plasmonically enhancing the pump absorption into the photo-absorbing regions of semiconductor substrate. In one exemplary embodiment, the photoconductive device is arranged as a photoconductive source and is pumped at telecom pump wavelengths (e.g., 1.0-1.6 &#x3bc;m) and produces milliwatt-range power levels in the terahertz (THz) frequency range.

Photoconductive detector device with plasmonic electrodes

An ion trap chip, which may be used for quantum information processing and the like, includes an integrated microwave antenna. The antenna is formed as a radiator connected by one of its ends to the center trace of a microwave transmission line and connected by its other end to a current return path through a ground trace of the microwave transmission line. The radiator includes several parallel, coplanar radiator traces connected in series. The radiator traces are connected such that they all carry electric current in the same direction, so that collectively, they simulate a single, unidirectionally flowing sheet of current. In embodiments, induced currents in underlying metallization planes are suppressed by parallel slots that extend in a direction perpendicular to the radiator traces.

Microfabricated ion trap chip with an integrated microwave antenna

A platform for trapping atomic ions includes a substrate and a plurality of metallization layers that overlie the substrate. The metallization layer farthest from the substrate is a top layer patterned with electrostatic control trap electrodes and radio-frequency trap electrodes. Another metallization layer is a microwave layer patterned to define a microwave circuit. The microwave layer lies below the top layer. The microwave circuit is adapted to generate, in use, a microwave magnetic field above the electrostatic control and radio-frequency trap electrodes. The top metallization layer includes slots that, in use, are penetrated by microwave energy from the microwave circuit.

Ion trapping for quantum information processing

A reconfigurable device for terahertz (THz) or infrared (IR) ranges that includes a base substrate, a lower array attached to the base substrate, and an upper array attached to the base substrate and at least partially suspended over the lower array. Activation of the reconfigurable device causes the upper array to mechanically flex towards the lower array so that electrical contact is made therebetween. Methods of fabricating and operating the reconfigurable device are also provided.

Reconfigurable device for terahertz (THz) and infrared (IR) filtering and modulation

Photoconductive emitter device with plasmonic electrodes

Growing community of inventors

Mountain View, CA, United States of America

Christopher W Berry