Memc Electronic Materials, Inc.

Corner Star Limited

Corner Start Limited

Christopher Vaughn Luers

Richard Joseph Phillips

Salvador Zepeda

John D Holder

Carissima Marie Hudson

Steven Lawrence Kimbel

Harold W Korb

Hariprasad Sreedharamurthy

Stephan Haringer

Mohsen Banan

Milind S Kulkarni

Marco Zardoni

A system for forming an ingot from a melt includes a first crucible defining a cavity for receiving the melt and a second crucible in the cavity. The second crucible separates an outer zone from an inner zone. The second crucible includes a passageway therethrough to allow the melt located within the outer zone to move into the inner zone. The inner zone defines a growth area for the ingot. The system also includes a barrier located within the outer zone to limit movement of the melt through the outer zone. The barrier includes members that are arranged to define a labyrinth for melt flow.

Crystal pulling system and method including crucible and barrier

Systems and methods for forming an ingot from a melt are disclosed. A system includes a crucible defining a cavity for receiving the melt, and a first and second barrier to inhibit movement of the melt. A first passageway and a second passageway are arranged to allow the melt located within an outer zone to move into and through a transition zone and into an inner zone. Conditioning members are placed in at least one of the zones and arranged to contact the melt to reduce the number of micro-voids in the melt.

System for forming an ingot including crucible and conditioning members

A single crystal silicon ingot having a constant diameter portion that contains arsenic dopant atoms at a concentration which results in the silicon having a resistivity that is less than about 0.003 &#x3a9;&#xb7;cm.

Single crystal silicon ingot having a high arsenic concentration

Growing community of inventors

O'Fallon, MO, United States of America

Christopher Vaughn Luers