Nanosys, Inc.

Shoei Chemical Inc.

Christopher Sunderland

Chunming Wang

Ashenafi Damtew Mamuye

Ravisubhash Tangirala

Nahyoung Kim

Wenzhou Guo

Jay Yamanaga

Eunhee Hwang

Ilan Jen-La Plante

John Joseph Curley

Alexander Tu

Disclosed are films comprising Ag In, Ga, and S (AIGS) nanostructures and at least one ligand bound to the nanostructures. In some embodiment, the AIGS nanostructures have a photon conversion efficiency of greater than 32% and a peak wavelength emission of 480-545 nm when excited using a blue light source with a wavelength of about 450 nm.

Films comprising bright silver based quaternary nanostructures

Disclosed are nanostructures comprising Ag, In, Ga, and S and a shell comprising Ag, Ga and S, wherein the nanostructures have a peak wavelength emission of 480-545 nm and wherein at least about 80% of the emission is band-edge emission. Also disclosed are methods of making the nanostructures.

Bright silver based quaternary nanostructures

Disclosed are films comprising Ag, In, Ga, and S (AIGS) nanostructures and at least one ligand bound to the nanostructures. In some embodiment, the AIGS nanostructures have a photon conversion efficiency of greater than 32% and a peak wavelength emission of 480-545 nm. In some embodiments, the nanostructures have an emission spectrum with a FWHM of 24-38 nm.

The invention pertains to the field of nanotechnology. More particularly, the invention relates to highly luminescent nanostructures, particularly highly luminescent nanostructures comprising a ZnTe core and CdS, CdSe, CdTe, ZnS, ZnSe, or ZnTe shell layers. The nanostructures show strong absorbance at 450 nm and have a high OD/mass ratio. The invention also relates to methods of producing such nanostructures.

Cadmium free blue absorbing II-VI quantum dots for thin film applications

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San Jose, CA, United States of America

Christopher Sunderland