Applied Materials, Inc.

Christopher Siu Wing Ngai

Huixiong Dai

Srinivas D Nemani

Dmitry Lubomirsky

Christopher Dennis Bencher

Douglas A Buchberger, Jr

Hui W Chen

Raymond Hoiman Hung

Michael Duane

Yongmei Chen

Jen Shu

Mangesh Bangar

Alan Tso

Chorng-Ping Chang

Susie Xiuru Yang

Gautam Pisharody

Xumou Xu

Kenneth MacWilliams

Lancelot Huang

Jiahua Yu

Embodiments of the present disclosure generally relate to apparatus and methods for verification and re-use of process fluids. The apparatus generally includes a tool for performing lithography, and a recirculation path coupled to the tool. The recirculation path generally includes a collection unit coupled at first end to a first end of the tool, and a probe coupled at a first end to a second end of the collection unit, the probe for determining one or more characteristics of a fluid flowing from the tool. The recirculation path of the apparatus further generally includes a purification unit coupled at a first end to a third end of the collection unit, the purification unit further coupled at a second end to a second end of the probe, the purification unit for changing a characteristic of the fluid.

Apparatus and methods for verification and re-use of process fluids

A system and a method for self-aligned dual patterning are described. The system includes a platform for supporting a plurality of process chambers. An etch process chamber coupled to the platform. An ultra-violet radiation photo-resist curing process chamber is also coupled to the platform.

System and method for self-aligned dual patterning

Methods to pattern features in a substrate layer by exposing a photoresist layer more than once. In one embodiment, a single reticle may be exposed more than once with an overlay offset implemented between successive exposures to reduce the half pitch of the reticle. In particular embodiments, these methods may be employed to reduce the half pitch of the features printed with 65 nm generation lithography equipment to achieve 45 nm lithography generation CD and pitch performance.

Double exposure patterning with carbonaceous hardmask

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Burlingame, CA, United States of America

Christopher Siu Wing Ngai