Hewlett-packard Development Company, L.p.

North Carolina State University

Christopher Shelton

Peter Mardilovich

James Elmer Abbott, Jr

Jon-Paul Maria

Edward Sachet

Evan Lars Runnerstrom

Kyle Patrick Kelley

Stephen F Bylund

James Elmer Abbott

A method of forming a metal oxide includes providing a reactive deposition atmosphere having an oxygen concentration of greater than about 20 percent in a chamber including a substrate therein. A pulsed DC signal is applied to a sputtering target comprising a metal, to sputter metal particles therefrom. A doping element may be supplied from a doping source (such as an alloyed metal target) in the reaction chamber. An electrically conductive metal oxide film comprising an oxide of the metal is deposited on the substrate responsive to a reaction between the metal particles and the reactive deposition atmosphere. Related devices are also discussed.

High mobility doped metal oxide thin films and reactive physical vapor deposition methods of fabricating the same

Polaritonic hot electron infrared photodetector that detect infrared radiation. In one implementation, the polaritonic hot electron infrared photodetector includes a first contact layer, a second contact layer, a first dielectric layer, a second dielectric layer, and a conductor layer. The first dielectric layer is coupled between the first contact layer and the second contact layer. The second dielectric layer is coupled between the first dielectric layer and the second contact layer. The conductor layer is coupled between the first dielectric layer and the second dielectric layer. Infrared radiation incident upon the conductor layer is operable to create hot carriers that are injected from a conduction band of the conductor layer to a conduction band of the second contact layer.

Polaritonic hot electron infrared photodetector

The present disclosure is drawn to a thin film stack including a substrate, a metal layer, and an adhesive layer. The adhesive layer comprises a blend of zinc oxide and tin oxide, and the adhesive layer is adhered between the substrate and the metal layer.

Thin film stack

The present disclosure is drawn to a thin film stack, which includes a substrate, a metal layer, and an adhesive layer comprising a blend of from 3 at % to 94 at % indium oxide, from 3 at % to 94 at % gallium oxide, and from 3 at % to 94 at % zinc oxide. The adhesive layer is adhered between the substrate and the metal layer.

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Raleigh, NC, United States of America

Christopher Shelton