Micron Technology Incorporated

Round Rock Research, LLC

Christopher S Johnson

Brian L Johnson

Scott E Schaefer

Kevin J Ryan

Dirgha Khatri

Dail Robert Cox

Ryan S Laity

Jeffery W Janzen

James J Gu

Andrew A Cheng

Kyle Schoenheit

In some examples, a defective memory cell detection circuitry is configured to provide a failure signal indicative of a failure of a sub-group of memory cells (e.g., a row of memory cells). The failure signal is generated responsive to the failure of a sense line to transition to one of a set of reference voltages within a threshold time from a memory command. In some examples, failure signals indicative of a failure of a sub-group of memory cells is used by vehicle computer control systems to operate a vehicle.

Defective memory cell detection circuitry including use in automotive control systems

Apparatuses and methods are described for selective determination of data error repair. An example apparatus includes a memory array and a controller coupled to the memory array. The controller is configured to direct performance, responsive to a request, of a read operation at an address in the memory array, direct detection of an error in data corresponding to the read operation address, and direct storage of the read operation address in an address error register. The controller is further configured to direct a response be sent to the enable selective determination of data error repair, where the response does not include the read operation address.

Apparatuses and methods for selective determination of data error repair

A semiconductor memory includes multi-mode reporting signals, a state register, and parity detectors. The parity detector determines whether signals received on a communication bus contain a desired parity. The multi-mode reporting signals enable reporting of communication faults without adding additional signals to the semiconductor memory by being configured in a normal operating mode or a parity fault mode for reporting communication faults to an external memory controller. The state register enables storing of received values from the communication bus. With the state register, a memory controller may determine correctly received signal patterns and failing signal patterns. Parity may be defined as even or odd and may be generated based on various signal configurations. The embodiments may be configured as a computing system comprising a processor, an input device, an output device, the memory controller, and at least one semiconductor memory.

Method and apparatus for detecting communication errors on a bus

Disclosed herein are solutions for addressing the problem of skew of data within a byte lane by factors caused external to the integrated circuit or module providing the data. To compensate for such skew, an on-chip delay is added to the data out paths of those bits in the byte lane with otherwise would arrive early to their destinations. Such on-chip delay is provided delay circuits preferably positioned directly before the output buffers/bond pads of the integrated circuit or module. By intentionally delaying some of the outputs from the integrated circuit or module, external skew is compensated for so that all data in the byte lane arrives at the destination at substantially the same time. In a preferred embodiment, the delay circuits are programmable to allow the integrated circuit or module to be freely tailored to environments having different skew considerations, such as different styles of connectors.

Adjustable byte lane offset for memory module to reduce skew

A semiconductor memory includes multi-mode reporting signals, a state register, and parity detectors. The parity detector determines whether signals received on a communication bus contain a desired parity. The multi-mode reporting signals enable reporting of communication faults without adding additional signals to the semiconductor memory by being configured in a normal operating mode or a parity fault mode for reporting communication faults to an external memory controller. The state register enables storing of received values from the communication bus. With the state register, a memory controller may determine correctly received signal patterns and failing signal patterns. Parity may be defined as even or odd and may be generated based on various signal configurations. The invention may be configured as a computing system comprising a processor, an input device, an output device, the memory controller, and at least one semiconductor memory.

A microprocessor system having a microprocessor and a double data rate memory device having separate groups of external pins adapted to receive addressing, data, and control information and a memory controller adapted to set a burst type of the double data rate memory to interleaved or sequential by sending a signal through one of the external pins of the double data rate memory device, such that when a read command is sent by the controller, depending on the burst type set, the double data rate memory device returns interleaved or sequentially output data to the memory controller.

Dynamically setting burst length of double data rate memory device by applying signal to at least one external pin during a read or write transaction

A logic circuit operates write receivers in a dynamic random access memory device in either a low-power mode, high write latency mode or a high-power mode, low write latency mode. The logic circuit receives a first signal indicative of whether the high-power, low write latency mode has been enabled, a second signal indicative of whether a row of memory cells in the memory device is active, a third signal indicative of whether the memory device is being operated in a power down mode, and a fourth signal indicative of whether read transmitters in the memory device are active. The logic circuit maintains power to the write receivers whenever the high-power, low write latency mode has been enabled if a row of memory cells in the memory device is active, the memory device is not being operated in the power down mode, and the read transmitters in the memory device are not active.

Memory device and method having low-power, high write latency mode and high-power, low write latency mode and/or independently selectable write latency

One or more external control pins and/or addressing pins on a memory device are used to set one or both of a burst length and burst type of the memory device.

A memory device includes a configurable array of memory cells. A number of array banks is configured based upon data stored in a mode register or decoded by logic circuitry. The memory device remains a full capacity memory, regardless of the number of array banks. Memory address decoding circuitry is adjusted to route address signals to or from a bank address decoder based upon the number of array banks selected.

Growing community of inventors

Meridian, ID, United States of America

Christopher S Johnson