Intel Corporation

Christopher Roy Schroeder

Christopher Wade Ackerman

Ioan Sauciuc

James G Maveety

Ashish Gupta

Michael L Rutigliano

Paul J Diglio

Tolga Acikalin

Nader N Abazarnia

James C Shipley

Morten S Jensen

David Won-jun Song

John C Johnson

Arun Krishnamoorthy

Akhilesh P Rallabandi

Joseph F Walczyk

Rene J Sanchez

Todd Michael Young

James R Hastings

Sruti Chigullapalli

Lothar Kress

Charles Clifton Fulton

Robert Levi Bennett

Techniques for thermal management of a device under test are discussed. In an example, an apparatus may include a pedestal having a device-specific surface configured to exchange heat with the integrated circuit while the device-specific surface is in contact with a surface of the integrated circuit or separated from the surface of the integrated circuit by a layer of thermally conductive material, and a heat generating element configured to heat the device-specific surface. In certain examples, the pedestal may include a plurality of channels configured to couple to a manifold and to route thermal material from the manifold through an interior of the pedestal for maintaining temperature control of the surface of an integrated circuit under test.

System for thermal management of device under test (DUT)

Placing integrated circuit devices using a perturbation is described. In one example, a testing platform has a circuit board. A socket is on the board for receiving and connecting to an integrated circuit package. The socket has an array of pins to engage connection bumps on a surface of the package and a biasing feature to guide the package into alignment with the pins of the socket. A perturbation source induces movement of the package into alignment with the pins of the socket.

Placing integrated circuit devices using perturbation

An apparatus to test a semiconductive device includes a base plane that holds at least one heat-transfer fluid unit cell. The at least one heat-transfer fluid unit cell includes a fluid supply structure including a supply-orifice cross section as well as a fluid return structure including a return-orifice cross section. The supply-orifice cross section is greater than the return-orifice cross section. A die interface is also included to be a liquid-impermeable material.

Direct liquid-contact micro-channel heat transfer devices, methods of temperature control for semiconductive devices, and processes of forming same

Thermal interface material handing is described for thermal control of an electronic component under test. In one example, a thermal control unit is adapted to control the temperature of at least a portion of an electronic component during testing. A pedestal between the thermal control unit and the electronic component conducts heat from the electronic component to the thermal head. A conduit extends through a portion of the pedestal, to permit the flow of a liquid thermal interface material from an external source to a space between the pedestal and the electronic component. The liquid thermal interface material improves heat conduction between the electronic component and the pedestal. An elastomeric seal between the electronic device and the pedestal constrains the thermal interface fluid within the space between the electronic component and the pedestal.

Thermal interface material handling for thermal control of an electronic component under test

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Gilbert, AZ, United States of America

Christopher Roy Schroeder