Arm Limited

Symetrix Corporation

Cerfe Labs, Inc.

Symetrix Memory, LLC

Christopher Randolph McWilliams

Carlos Alberto Paz De Araujo

Jolanta Bozena Celinska

Lucian Shifren

Kimberly Gay Reid

Subject matter disclosed herein may relate to fabrication of correlated electron materials used, for example, to perform a switching function. In embodiments, processes are described in which a correlated electron material film may be formed over a conductive substrate by converting at least a portion of the conductive substrate to CEM.

Correlated electron device formed via conversion of conductive substrate to a correlated electron region

Subject matter disclosed herein may relate to fabrication of a correlated electron material (CEM) switch. In particular embodiments, formation of a CEM switch may comprise depositing metal layers, such layers of a transition metal, over a conductive substrate. Dopant layers may subsequently be deposited on the layers of the transition metal, followed by annealing of the layers of transition metal and dopant layers. Responsive to annealing, dopant from the dopant layers may diffuse into the one or more layers of transition metal, thereby forming a CEM.

Formation of correlated electron material (CEM) device via dopant deposition and anneal

A resistive switching memory comprising a first electrode and a second electrode; an active resistive switching region between the first electrode and the second electrode, the resistive switching region comprising a transition metal oxide and a dopant comprising a ligand, the dopant having a first concentration; a first buffer region between the first electrode and the resistive switching material, the first buffer region comprising the transition metal oxide and the dopant, wherein the dopant has a second concentration that is greater than the first concentration. In one embodiment, the second concentration is twice the first concentration. In one embodiment, the first buffer region is thicker than the active resistive switching region.

Transition metal oxide resistive switching device with doped buffer region

A re-programmable antifuse field programmable gate array (FPGA) integrated circuit, the FPGA comprising: a plurality of CeRAM resistive switching elements forming a connection block, the switching elements capable of being switched from a conductive (ON) state to a non-conductive (OFF) state and back to a conductive (ON) state; a plurality of logic elements forming a logic block; and a programming circuit for turning the CeRAM switching elements OFF and ON to connect the logic elements to form the FPGA.

Growing community of inventors

Colorado Springs, CO, United States of America

Christopher Randolph McWilliams