Kla Tencor Corporation

Ultrapointe Corporation

Kla-tencor Technologies Corporation

The United States of America As Represented by the United States

Christopher R Fairley

Bin-Ming Benjamin Tsai

Tao-Yi Fu

Gershon Perelman

Ken K Lee

Scott Allen Young

Hans J Hansen

Bruce W Worster

Dale E Crane

Timothy V Thompson

Abigail A Moorhouse

Steven R Patterson

Tao Yi Fu

Bin-Ming Benjanim Tsai

Alan Helgesson

Phillip R Rigg

A semiconductor wafer inspection system and method is provided which uses a multiple element arrangement, such as an offset fly lens array. The preferred embodiment uses a laser to transmit light energy toward a beam expander, which expands the light energy to create an illumination field. An offset fly lens array converts light energy from the illumination field into an offset pattern of illumination spots. A lensing arrangement, including a first lens, a transmitter/reflector, an objective, and a Mag tube imparts light energy onto the specimen and passes the light energy toward a pinhole mask. The pinhole mask is mechanically aligned with the offset fly lens array. Light energy passing through each pinhole in the pinhole mask is directed toward a relay lens, which guides light energy onto a sensor. The offset fly lens array corresponds to the pinhole mask. The offset pattern of the offset fly lens array is chosen such that spots produced can be recombined into a continuous image, and the system utilizes a time delay and integration charge coupled device for rapid sensing along with an autofocus system that measures and cancels topological features of the specimen.

Confocal wafer inspection system and method

The broadband brightfield/darkfield wafer inspection system provided receives broadband brightfield illumination information via a defect detector, which signals for initiation of darkfield illumination. The defect detector forms a two dimensional histogram of the defect data and a dual mode defect decision algorithm and post processor assess defects. Darkfield radiation is provided by two adjustable height laser beams which illuminate the surface of the wafer from approximately 6 to 39 degrees. Each laser is oriented at an azimuth angle 45 degrees from the orientation of the manhattan geometry on the wafer, and 90 degrees in azimuth from one another. Vertical angular adjustability is provided by modifying cylindrical lens position to compensate for angular mirror change by translating an adjustable mirror, positioning the illumination spot into the sensor field of view, rotating and subsequently moving the cylindrical lens. A brightfield beamsplitter in the system is removable, and preferably replaced with a blank when performing darkfield illumination. Light level control for the system is provided by a dual polarizer first stage. Light exiting from the second polarizer passes through a filter which absorbs a portion of the light and comprises the second stage of light control. The beam then passes through a polarizing beamsplitter. The second channel is further reflected and polarized and both beams thereafter illuminate the substrate.

High throughput brightfield/darkfield water inspection system using advanced optical techniques

The broadband brightfield/darkfield wafer inspection system provided receives broadband brightfield illumination information via a defect detector, which signals for initiation of darkfield illumination. The defect detector forms a two dimensional histogram of the defect data and a dual mode defect decision algorithm and post processor assess defects. Darkfield radiation is provided by two adjustable height laser beams. Vertical angular adjustability is provided by modifying cylindrical lens position to compensate for angular mirror change by translating an adjustable mirror, positioning the illumination spot into the sensor field of view, rotating and subsequently moving the cylindrical lens. A brightfield beamsplitter in the system is removable, and preferably replaced with a blank when performing darkfield illumination. Light level control for the system is provided by a dual polarizer first stage.

High throughput darkfield/brightfield wafer inspection system using advanced optical techniques

Confocal wafer inspection method and apparatus using fly lens arrangement

The broadband brightfield/darkfield wafer inspection system provided receives broadband brightfield illumination information via a defect detector, which signals for initiation of darkfield illumination. The defect detector forms a two dimensional histogram of the defect data and a dual mode defect decision algorithm and post processor assess defects. Darkfield radiation is provided by two adjustable height laser beams. Vertical angular adjustability is provided by modifying cylindrical lens position to compensate for angular mirror change by translating an adjustable mirror, positioning the illumination spot into the sensor field of view, rotating and subsequently moving the cylindrical lens. Light level control for the system is provided by a dual polarizer first stage. Light exiting from the second polarizer passes through a filter which absorbs a portion of the light and comprises the second stage of light control.

High throughput brightfield/darkfield wafer inspection system using advanced optical techniques

The broadband brightfield/darkfield wafer inspection system provided receives broadband brightfield illumination information via a defect detector, which signals for initiation of darkfield illumination. The defect detector forms a two dimensional histogram of the defect data and a dual mode defect decision algorithm and post processor assess defects. Darkfield radiation is provided by two adjustable height laser beams Vertical angular adjustability is provided by modifying cylindrical lens position to compensate for angular mirror change by translating an adjustable mirror, positioning the illumination spot into the sensor field of view, rotating and subsequently moving the cylindrical lens. A brightfield beamsplitter in the system is removable, and preferably replaced with a blank when performing darkfield illumination. Light level control for the system is provided by a dual polarizer first stage.

Confocal wafer depth scanning inspection method

The broadband brightfield/darkfield wafer inspection system provided receives broadband brightfield illumination information via a defect detector, which signals for initiation of darkfield illumination. The defect detector forms a two dimensional histogram of the defect data and a dual mode defect decision algorithm and post processor assess defects. Darkfield radiation is provided by two adjustable height laser beams which illuminate the surface of the wafer from approximately 6 to 39 degrees. Each laser is oriented at an azimuth angle 45 degrees from the orientation of the Manhattan geometry on the wafer, and 90 degrees in azimuth from one another. Vertical angular adjustability is provided by modifying cylindrical lens position to compensate for angular mirror change by translating an adjustable mirror, positioning the illumination spot into the sensor field of view, rotating and subsequently moving the cylindrical lens. A brightfield beamsplitter in the system is removable, and preferably replaced with a blank when performing darkfield illumination. Light level control for the system is provided by a dual polarizer first stage. Light exiting from the second polarizer passes through a filter which absorbs a portion of the light and comprises the second stage of light control. The beam then passes through a polarizing beamsplitter. The second channel is further reflected and polarized and both beams thereafter illuminate the substrate.

A laser imaging system is used to analyze defects on semiconductor wafers that have been detected by patterned wafer defect detecting systems (wafer scanners). The laser imaging system replaces optical microscope review stations now utilized in the semiconductor fab environment to examine detected optical anomalies that may represent wafer defects. In addition to analyzing defects, the laser imaging system can perform a variety of microscopic inspection functions including defect detection and metrology. The laser imaging system uses confocal laser scanning microscopy techniques, and operates under class 1 cleanroom conditions and without exposure of the wafers to operator contamination or airflow. Unlike scanning electron microscopes (SEMs) that have previously been used for defect analysis, the laser imaging system will not damage samples or slow processing, costs significantly less to implement than an SEM, can produce a three dimensional image which provides quantitative dimensional information, and allows sub-surface viewing of defects lying beneath dielectric layers. The laser imaging system is adaptable to cluster or in-situ applications, where examination of defects or structures during on-line processing can be performed.

Laser imaging system for inspection and analysis of sub-micron particles

A microscope system moves a target in a first direction relative to a low power objective lens and, during the relative motion, generates and records values of an electronic focus signal that depends on the magnitude of light reflected by the target. Then, a host workstation calculates a first estimate of position ('focus position') of the target at which the microscope system is focused, by a median point method. In the median point method, the host workstation calculates the sum of the recorded values and determines the position along the range of motion at which half of this sum was exceeded, to be a first estimate of the focus position. From the intensity values of the first pass, optimal sensor gain is set for subsequent passes. Second and third estimates of the focus position can be calculated in a similar manner if necessary and the target is moved to the most recent estimate of the focus position. In one embodiment, the microscope system uses an area scan in which the largest value of an electronic focus signal at a set of points within an area of the target is recorded at a given elevation of the target. The largest of the recorded values is then used to estimate the focus position of the brightest layer of the target. In one embodiment, the microscope system focuses on a predetermined layer using an offset from the brightest layer.

Method and apparatus for automatically focusing a microscope

Method and apparatus for automatic focusing of a confocal laser

A method and apparatus for generating a surface image of a target. The laser beam of a confocal laser microscope is moved along a scanning pattern on an area of a target. During each scanning pattern, the resulting electronic focus signal of the microscope is sampled at defined positions along the scanning pattern to generate a frame of pixel intensity values. At the end of each scanning pattern, the height of the target is slightly increased. A new frame of pixel intensity values is generated for each height of the target. The pixel intensity values of the frames are compared. The maximum pixel intensity value for each defined position along the scanning pattern is stored to create a single frame representative of the surface image of the target. In an alternate embodiment, the height at which each maximum pixel intensity value was measured is stored in a separate memory.

Growing community of inventors

San Jose, CA, United States of America

Christopher R Fairley