International Business Machines Corporation

Armonk Business Machines Corporation

Christopher Peter D'Emic

Kevin K Chan

Sufi Zafar

Tak H Ning

Jin Cai

Devendra K Sadana

Evgeni Petrovich Gousev

Paul Charles Jamison

Can Bayram

Ali Afzali-Ardakani

Jeng-Bang Yau

Ashish V Jagtiani

Effendi Leobandung

William Joseph Gallagher

Dae-Gyu Park

Fenton Read McFeely

Vijay Narayanan

Eduard Albert Cartier

Alessandro Cesare Callegari

Sandip Tiwari

Bahman Hekmatshoartabari

Jeehwan Kim

Paul Michael Solomon

Supratik Guha

Rajarao Jammy

Erin C Jones

Alessandro Curioni

Michael Abramovich Gribelyuk

Nestor Alexander Bojarczuk, Jr

Mukesh Vijay Khare

James J Quinlivan

Dianne L Lacey

Beth A Ward

Lars-Ake Ragnarsson

Wanda Andreoni

Paul Michael Kozlowski

Thomas T Hwang

Carlo A Pignedoli

Stephen W Bedell

Arne Watson Ballantine

Jack Oon Chu

John Albrecht Ott

Donald Francis Canaperi

Matthew Warren Copel

Hon-Sum Philip Wong

Hongbo Peng

Joseph Francis Shepard, Jr

Patrick Ronald Varekamp

Harald F Okorn-Schmidt

John Jacob Yurkas

Young-Hee Kim

Huiling Shang

Atul Champaklal Ajmera

Douglas Andrew Buchanan

Hyungjun Kim

Joseph S Newbury

Lijuan Huang

Theodore Harold Zabel

Margaret Paggi Manny

Raymond M Sicina

Evengi Gousev

Joseph P Shepard, Jr

John Albert Ott

After forming a trench extending through an insulator layer and an underlying top semiconductor portion that is comprised of a first semiconductor material and a dopant of a first conductivity type to define an emitter and a collector on opposite sides of the trench in the top semiconductor portion, an intrinsic base comprising a second semiconductor material having a bandgap less than a bandgap of the first semiconductor material and a dopant of a second conductivity type opposite the first conductivity type is formed in a lower portion the trench by selective epitaxial growth. The intrinsic base protrudes above the top semiconductor portion and is laterally surrounded by entire top semiconductor portion and a portion of the insulator layer. An extrinsic base is then formed on top of the intrinsic base to fill a remaining volume of the trench by a deposition process.

Semiconductor-on-insulator lateral heterojunction bipolar transistor having epitaxially grown intrinsic base and deposited extrinsic base

A hetero-integrated device includes a monocrystalline Si substrate and a trench formed in the substrate to expose a crystal surface at a bottom of the trench. Sidewall dielectric spacers are formed on sidewalls of the trench, and a III-V material layer is formed on the crystal surface at the bottom of the trench and is isolated from the sidewalls of the trench by the sidewall dielectric spacers.

Hetero-integration of III-N material on silicon

A method of forming a semiconductor structure includes providing an emitter and a collector on a surface of an insulator layer. The emitter and the collector are spaced apart and have a doping of a first conductivity type. An intrinsic base is formed between the emitter and the collector and on the insulator layer by epitaxially growing the intrinsic base from at least a vertical surface of the emitter and a vertical surface of the collector. The intrinsic base has a doping of a second conductivity type opposite to the first conductivity type, and a first heterojunction exists between the emitter and the intrinsic base and a second heterojunction exists between the collector and the intrinsic base.

Semiconductor-on-insulator (SOI) lateral heterojunction bipolar transistor having an epitaxially grown base

A method of forming a structure that can be used to integrate Si-based devices, i.e., nFETs and pFETs, with Group III nitride-based devices is provided. The method includes providing a substrate containing an nFET device region, a pFET device region and a Group III nitride device region, wherein the substrate includes a topmost silicon layer and a &#x3c;111&#x3e; silicon layer located beneath the topmost silicon layer. Next, a trench is formed within the Group III nitride device region to expose a sub-surface of the &#x3c;111&#x3e; silicon layer. The trench is then partially filled with a Group III nitride base material, wherein the Group III nitride material base material has a topmost surface that is coplanar with, or below, a topmost surface of the topmost silicon layer.

Group III nitride integration with CMOS technology

An apparatus comprises: a sensing element formed on a buried oxide layer of a substrate and providing communication between a source region and a drain region; a gate dielectric layer on the sensing element, the gate dielectric layer defining a sensing surface on the sensing element; a passive surface surrounding the sensing surface; and a compound bound to the sensing surface and not bound to the passive surface, the compound having a ligand specifically configured to preferentially bind a target molecule to be sensed. An electrolyte solution in contact with the sensing surface and the passive surface forms a top gate of the apparatus.

Field effect transistor-based bio-sensor

A mechanism is provided for determining an isoelectric point of a molecule. A first group of capacitance versus voltage curves of a capacitor is measured. The capacitor includes a substrate, dielectric layer, and conductive solution. The first group of curves is measured for pH values of the solution without the molecule bound to a functionalized material on the dielectric layer of the capacitor. A second group of capacitance versus voltage curves of the capacitor is measured when the molecule is present in the solution, where the molecule is bound to the functionalized material of the dielectric layer of the capacitor. A shift is determined in the second group of curves from the first group of curves at each pH value. The isoelectric point of the molecule is determined by extrapolating a pH value corresponding to a shift voltage being zero, when the shift is compared to the pH values.

Determination of isoelectric points of biomolecules using capacitive sensors

Field effect transistor-based bio sensor

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Ossining, NY, United States of America

Christopher Peter D'Emic