National Technology & Engineering Solutions of Sandia, LLC

Sandia Corporation

US Government As Represented by the Secretary of the Army

Christopher Nordquist

Roy H Olsson

Matt Eichenfield

Michael C Wanke

Matthew G Blain

Benjamin Griffin

Aleem Siddiqui

Peter Lukas Wilhelm Maunz

Darren W Branch

Kenneth Wojciechowski

Sean Michael Scott

Mark Lee

Christopher W Berry

Michael David Henry

Paul J Resnick

Christopher T Rodenbeck

Randy J Shul

Ronald G Polcawich

Michael Joseph Cich

Paul Gilbert Clem

Thomas A Friedmann

Darin Leonhardt

Thomas A Plut

James Kenneth Douglas

Rajen Chanchani

Jonathan David Sterk

Christopher Dyck

John F Rembetski

Joyce Olsen Custer

Tyler Scott Jordan

Jeff Hunker

Steven L Wolfley

Tracy C Peterson

Catalina Ahlers

Gary A Patrizi

David A Czaplewski

The present invention relates to tunable microresonators, as well as methods of designing and tuning such resonators. In particular, tuning includes applying an electrical bias to the resonator, thereby shifting the resonant frequency.

Solid-state tuning behavior in acoustic resonators

A hybrid ferroelectric/non-ferroelectric piezoelectric microresonator is disclosed. The hybrid microresonator uses a ferroelectric layer as the actuator as ferroelectric materials typically have higher actuation coefficients than non-ferroelectric piezoelectric materials. The hybrid microresonator uses a non-ferroelectric piezoelectric layer as the sensor layer as non-ferroelectric piezoelectric materials typically have higher sensing coefficients than ferroelectric materials. This hybrid microresonator design allows the independent optimization of actuator and sensor materials. This hybrid microresonator design may be used for bulk acoustic wave contour mode resonators, bulk acoustic wave solidly mounted resonators, free-standing bulk acoustic resonators, and piezoelectric transformers.

Hybrid piezoelectric microresonator

A radio-frequency (RF) surface ion trap chip includes an RF electrode and an integrated capacitive voltage divider in which an intermediate voltage node is capacitively connected between the RF electrode and a ground. A sensor output trace is connected to the intermediate voltage node.

Microfabricated ion trap chip with in situ radio-frequency sensing

An ion trap chip, which may be used for quantum information processing and the like, includes an integrated microwave antenna. The antenna is formed as a radiator connected by one of its ends to the center trace of a microwave transmission line and connected by its other end to a current return path through a ground trace of the microwave transmission line. The radiator includes several parallel, coplanar radiator traces connected in series. The radiator traces are connected such that they all carry electric current in the same direction, so that collectively, they simulate a single, unidirectionally flowing sheet of current. In embodiments, induced currents in underlying metallization planes are suppressed by parallel slots that extend in a direction perpendicular to the radiator traces.

Microfabricated ion trap chip with an integrated microwave antenna

A focusing interdigital transducer (IDT) and corresponding single- and dual-port piezoelectric devices are disclosed. The focusing interdigital transducer, which generates Lam&#xe9; acoustic waves, permits operation at significantly higher frequencies than those possible with traditional IDTs. The focusing IDT employs multiple arced fingers formed both above and below the piezoelectric layer to improve coupling efficiency by coupling through both the eand epiezoelectric coefficients to the piezoelectric layer. By optimizing both anchor design and location, acoustic wave losses are minimized, thereby improving the device's quality factor Q. Through proper bus design and selection of the number of IDT fingers, a device's impedance can be tuned for a given application. The focusing IDTs may be used in single-port filter devices and dual-port transformer devices. The single- and dual-port devices may operate at a single frequency, at two frequencies, or over a band of frequencies.

Focusing transformers/filters in isotropic/anisotropic piezoelectrics

A platform for trapping atomic ions includes a substrate and a plurality of metallization layers that overlie the substrate. The metallization layer farthest from the substrate is a top layer patterned with electrostatic control trap electrodes and radio-frequency trap electrodes. Another metallization layer is a microwave layer patterned to define a microwave circuit. The microwave layer lies below the top layer. The microwave circuit is adapted to generate, in use, a microwave magnetic field above the electrostatic control and radio-frequency trap electrodes. The top metallization layer includes slots that, in use, are penetrated by microwave energy from the microwave circuit.

Ion trapping for quantum information processing

A radio frequency (RF) receiver comprises a passive impedance transforming voltage amplifier and a resonant, latching micromechanical switch having a deflectable bridge, an RF actuation electrode receivingly connected to the amplifier, and a DC bias electrode positioned to latch the switch in a closed position by electrostatic attraction when energized by a suitable voltage. The bridge is configured with a mechanical mode of vibration that periodically urges the switch toward the closed position.

Microsystems-based method and apparatus for passive detection and processing of radio-frequency signals

A Schottky diode is monolithically integrated into the core of an infrared semiconductor laser (e.g., a quantum cascade laser) to create a heterodyned infrared transceiver. The internal mode field of the infrared semiconductor laser couples to an embedded Schottky diode and can mix the infrared fields to generate a response at the difference frequency.

Monolithically integrated infrared transceiver

The present invention related to self-limiting filters, arrays of such filters, and methods thereof. In particular embodiments, the filters include a metal transition film (e.g., a VOfilm) capable of undergoing a phase transition that modifies the film's resistivity. Arrays of such filters could allow for band-selective interferer rejection, while permitting transmission of non-interferer signals.

Self-limiting filters for band-selective interferer rejection or cognitive receiver protection

An acoustically coupled frequency selective radio frequency (RF) device is provided. The device includes a piezoelectric substrate overlain by a plurality of electrodes. The device further includes a pair of RF input terminals at least one of which is electrically connected to at least one of the electrodes, and a pair of output RF terminals, at least one of which is electrically connected to at least one other of the electrodes. At least one of the electrodes is electromechanically reconfigurable between a state in which it is closer to a face of the piezoelectric substrate and at least one state in which it is farther from the face of the piezoelectric substrate.

Programmable electroacoustic filter apparatus and method for its manufacture

In wafer-level packaging of microelectromechanical (MEMS) devices a lid wafer is bonded to a MEMS wafer in a predetermined aligned relationship. Portions of the lid wafer are removed to separate the lid wafer into lid portions that respectively correspond in alignment with MEMS devices on the MEMS wafer, and to expose areas of the MEMS wafer that respectively contain sets of bond pads respectively coupled to the MEMS devices.

MEMS packaging with etching and thinning of lid wafer to form lids and expose device wafer bond pads

A heterodyne terahertz transceiver comprises a quantum cascade laser that is integrated on-chip with a Schottky diode mixer. A terahertz signal can be received by an antenna connected to the mixer, an end facet or sidewall of the laser, or through a separate active section that can amplify the incident signal. The quantum cascade laser couples terahertz local oscillator power to the Schottky diode to mix with the received terahertz signal to provide an intermediate frequency output signal. The fully integrated transceiver optimizes power efficiency, sensitivity, compactness, and reliability. The transceiver can be used in compact, fieldable systems covering a wide variety of deployable applications not possible with existing technology.

Integrated heterodyne terahertz transceiver

The present invention is directed to the integration of a quantum cascade laser with a hollow waveguide on a chip to improve both the beam pattern and manufacturability. By coupling the QCL output into a single-mode rectangular waveguide the radiation mode structure can be known and the propagation, manipulation, and broadcast of the QCL radiation can then be entirely controlled by well-established rectangular waveguide techniques. By controlling the impedance of the interface, enhanced functions, such as creating amplifiers, efficient coupling to external cavities, and increasing power output from metal-metal THz QCLs, are also enabled.

Integration of a terahertz quantum cascade laser with a hollow waveguide

A nanoelectromechanical (NEM) switch is formed on a substrate with a source electrode containing a suspended electrically-conductive beam which is anchored to the substrate at each end. This beam, which can be formed of ruthenium, bows laterally in response to a voltage applied between a pair of gate electrodes and the source electrode to form an electrical connection between the source electrode and a drain electrode located near a midpoint of the beam. Another pair of gate electrodes and another drain electrode can be located on an opposite side of the beam to allow for switching in an opposite direction. The NEM switch can be used to form digital logic circuits including NAND gates, NOR gates, programmable logic gates, and SRAM and DRAM memory cells which can be used in place of conventional CMOS circuits, or in combination therewith.

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Albuquerque, NM, United States of America

Christopher Nordquist