Seiko Epson Corporation

Cambridge Display Technology Limited

Sumitomo Chemical Company, Limited

Seiko Epson Corporaition

Christopher Newsome

Thomas Kugler

Shunpu Li

David Russell

Takeo Kawase

Jeremy H Burroughes

Daping Chu

Simon Goddard

Daniel Tobjork

Nicholas Dartnell

David Russel

Euan Christopher Smith

Shuji Doi

Julian Charles Carter

Jonathan J Halls

Mark Dowling

Daniel Tobjörk

Mohd K Othman

A gas sensor system for measuring a plurality of gases in an environment. The gas sensors system comprises multiple gas sensors where each of the gas sensors includes a pair of electrodes separated by a semiconducting material. The gas pairs of electrodes of the gas sensors are separated by different distances in each of the gas sensors. Resistivity of the semiconducting material of the gas sensors changes in the presence of a first gas and a contact resistivity between the electrodes and the semiconducting material of gas sensors changes in the presence of a second gas. From measurements of total resistivity of each of the gas sensors the presence and/or the concentration of both the first and the second gas sensors can be determined.

Semiconductor gas sensor and method for sensing two or more gases using contact resistance and sheet resistance

A gas sensor system () comprising at least one first field effect transistor () comprising first source and drain electrodes and at least one second field effect transistor () comprising second source and drain electrodes different from the first source and drain electrodes. Different responses of the first and second FETs to gases in an environment may be used to differentiate between the gases, for example to differentiate between 1-methylcyclopropene and ethylene in locations where fruit is stored.

Gas sensor system and method

We describe a method for reducing a parasitic resistance at an interface between a conducting electrode region and an organic semiconductor in a thin film transistor, the method comprising: providing a solution comprising a dopant for doping said semiconductor, and depositing said solution onto said semiconductor and/or said conducting electrode region to selectively dope said semiconductor adjacent said interface between said conducting electrode region and said semiconductor, wherein depositing said solution comprises inkjet-printing said solution.

Doping organic semiconductors

Provided is a polymer blend for a semiconducting layer of an organic electronic device, comprising: a first polymer; a second polymer which is different from the first polymer; and a semiconductor compound selected from the group of pentacene derivatives and thiophene derivatives. The semiconductor compound is distributed homogeneously in the semiconducting layer in the direction parallel to the surface of the electrodes. This improved lateral distribution of the semiconductor compound in the semiconducting layer provides a reduced contact resistance, particularly for short channel length devices.

Polymer blends for a semiconducting layer of an organic electronic device

Provided is a solution comprising a polymer and an organic semiconductor compound, wherein the semiconductor compound is a thiophene derivative, and wherein the solvent is a mixture comprising a) at least one of 4-methyl anisole, indane and an alkylbenzene with a linear or branched alkyl group containing from 4 to 7 carbon atoms; and b) at least one of tetrahydronaphthalin and 1,2,4-trimethylbenzene.

Solution for a semiconducting layer of an organic electronic device

There is disclosed a method for preparing a modified electrode for an organic electronic device, wherein said modified electrode comprises a surface modification layer, comprising: (i) depositing a solution comprising M(tfd), wherein M is Mo, Cr or W, and at least one solvent onto at least a part of at least one surface of said electrode; and (ii) removing at least some of said solvent to form said surface modification layer on said electrode.

Electrode surface modification layer for electronic devices

A method for preparing a semiconducting layer of an organic electronic device comprising: (i) depositing said semiconducting layer from a solution comprising a polymeric semiconductor, a non-polymeric semiconductor, a first aromatic solvent and a second aromatic solvent, wherein said second aromatic solvent has a boiling point that is at least 15&#xb0; C. higher than the boiling point of said first aromatic solvent; and (ii) heating said deposited layer to evaporate said solvent, wherein said first aromatic solvent is of formula (I): wherein Ris selected from Calkyl and OCalkyl; and Rand Rare each independently selected from H and CCalkyl.

Method for preparing a semiconducting layer

An organic semiconductor composition including at least one solvent, a polymer, a first small molecule organic semiconductor and a small molecule crystallization modifier. The first small molecule organic semiconductor:small molecule crystallization modifier weight ratio is at least 6:1, optionally at least 10:1, optionally at least 20:1. The small molecule crystallization modifier increases the uniformity of the first small molecule organic semiconductor distribution in an organic semiconductor layer deposited in the channel of an organic transistor, with the effect that the mobility of the organic transistor is higher than the mobility of an organic device including a composition without the small molecule crystallization modifier.

Organic semiconductor composition including a non-polymeric material having a polydispersity equal to one, at least one solvent, and a crystallization modifier, and an organic thin-film transistor using the same

The invention provides the use of a solvent selected from the group consisting of alkoxybenzenes and alkyl substituted alkoxybenzenes in reducing the contact resistance in an organic thin film transistor comprising a semiconductor layer comprising a blend of a small molecule semiconductor material and a polymer material that is deposited from a solution of said small molecule semiconductor material and said polymer material in said solvent and novel semiconductor blend formulations that are of particular use in preparing organic thin film transistors. Said solvents yield devices with lower absolute contact resistance, lower absolute channel resistance, and lower proportion of contact resistance to the total channel resistance.

Low contact resistance organic thin film transistors

A method of fabricating an electronic device, such as an organic thin film transistor, is disclosed. A substrate, for example a silicate glass substrate, has a surface which supports at least one metallic electrode comprising at least one metal, for example gold, and at least a portion of the surface of the substrate is exposed. The method comprises selectively forming a self-assembled layer on the exposed portion of the substrate surface such that no self-assembled layer is formed on the at least one metallic electrode and applying a solution or other liquid which is repelled by the self-assembled layer to at least one metal electrode so as to selectively form a layer of further material, such as a charge injection promoting material, on the at least one metallic electrode.

Method of fabricating an electronic device comprising allowing a self-assembled layer to form selectively

Method for producing a semiconductor device such as an organic thin film transistor, and a device produced by the method, the method including the steps of forming conducting electrodes over a substrate, treating a surface of the electrodes with an arene substituted with an electron-withdrawing group to form an electrode contact layer over the electrodes, and forming an organic semiconductor layer over the substrate and electrodes, in which the substrate and electrodes are baked before the organic semiconductor layer is formed so as to reduce contaminants on the electrode contact layer and thereby promote improved crystal nucleation on a surface of the electrode.

Method of forming organic semiconductor device that includes forming electrode contact layer by treating electrode surfaces with substance containing substituted arene

The present invention provides a method of manufacturing an organic thin film transistor (TFT), comprising: providing a substrate layer; providing a gate electrode layer; providing a dielectric material layer; providing an organic semiconductor (OSC) material layer; providing a source and drain electrode layer; and wherein one or more of the layers is deposited using a laser induced thermal imaging (LITI) process. Preferably the organic TFT is a bottom gate device and the source and drain electrodes are deposited on an organic semiconductor layer, or over a dielectric material layer using LITI. Further preferably a dopant material may be provided between the OSC material and the source and drain electrode layer, wherein the dopant material may also be deposited using LITI. Also preferably, wherein the dopant may be a charge neutral dopant such as substituted TCNQ or F4TCNQ.

Organic thin film transistors and methods of making them

A method of fabricating a bank structure, includes: (a) forming a multi-layer structure on an underlying surface thereof, the multi-layer structure having at least a first layer and a second layer, (b) embossing the second layer so as to define a bank pattern in the second layer, (c) transferring the bank pattern to the first layer so as to form a bank structure defining an indented region; and (d) removing the second layer after the step (c) so as to expose a surface of the first layer as a top surface of the bank structure.

Method of fabricating a structure

The invention disclosed relates to the fabrication of electronic devices. A method for fabricating an electronic device is disclosed, comprising embossing a surface of a work-pieceusing an embossing tool, so as to form a microstructure having at least two levels of thickness contrast on the work-piece surface, and depositing fluidcontaining a functional material onto the microstructure. In a preferred embodiment, the step of depositing fluidcomprises ink-jet printing. An embossing toolfor creating a microstructure on a work-pieceis also disclosed, the embossing toolcomprising a first surface and steps of at least two different heights relative to the first surface.

Device fabrication by ink-jet printing materials into bank structures, and embossing tool

The present invention relates to flexible substrates having on their surface a wetting contrast. The wetting contrast comprises adjacent areas of different hydrophilicity and/or oleophilicity. The present invention further relates to methods of production of such substrates and to methods of producing microelectronic components wherein electronically functional material is deposited onto said substrates. According to a first aspect of the present invention, a method of producing a flexible substrate having a wetting contrast is provided. The method includes the step of forming a first area comprising an inorganic material on a flexible substrate precursor to form a substrate wherein the inorganic material is at least partially exposed at the substrate surface and the first area constitutes a pattern on the precursor surface.

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Cambridge, United Kingdom

Christopher Newsome