Other

M/a -Com, Inc.

Mia-Com, Inc.

Tyco Electronics Corporation

Macom Technology Solutions Holdings, Inc.

Christopher N Brindle

Mark F Kelcourse

Christopher Dirk Weigand

Norbert Andrew Schmitz

A switch includes at least two signal ports in series with a series FET connected therebetween, and a shunt path having an FET, whereby an input bias is applied to a gate on the series FET and to a drain on the shunt FET. In one embodiment, the switch includes a control signal input, an FET connected in series across the first port and the second port, the series FET having a gate coupled to the control signal input, and a shunt path provided by an FET, the shunt FET having a drain coupled to the control signal input and to the gate of the series FET, whereby a single control signal is applied to both the series FET and the shunt FET, via the control signal input, in order to turn the series FET on and simultaneously turn the shunt FET off and, conversely, in order to turn the series FET off and simultaneously turn the shunt FET on.

Series/shunt switch and method of control

An apparatus and method for detecting radio frequency transmit power levels produced by a power amplifier of a wireless device is described. In one exemplary apparatus implementation, the apparatus includes a power amplifier, an antenna switch and a power amplifier detector. The power amplifier is configured to amplify a transmit signal at a desired power level. An antenna switch, is located between the power amplifier and an antenna, and is configured to switch the antenna from a receive mode to a transmit mode and vice versa. A power amplifier detector is connected to the antenna switch. The power amplifier detector is configured to receive a leakage signal from the antenna switch as a basis to detect the power level of the transmit signal.

Apparatus and method for detecting radio frequency transmission power levels

The invention is directed to a multi-band switch having a transmitter switching section with a plurality of transmission ports, and a receiver switching section with a plurality of receiver ports, each having associated switching topologies to switch one of the ports to an antenna port. The switching topologies may use a plurality of series-connected FETs, such as insulated gate n-channel FETs, where the transmitter port switching elements may have larger switching transistors than the receiver port switching elements. The main signal path transistors of the transmitter and receiver switching elements be interdigitated FETs, in which source region fingers and drain region fingers alternate within the transistor area. These interdigitated source and drain regions may be spaced apart from each other by a sinuous channel region, over which is a gate metallization.

Apparatus, methods and articles of manufacture for a multi-band switch

A low control voltage switch utilizing a plurality of field effect transistors (FETs) having a total of six gates to allow the switch to operate at a low control voltage without the need to increase device periphery or die size. Feed-forward capacitors connected between the gate and source of an uppermost FET and the gate and drain of a lowermost FET are used to reduce signal distortion and improve the linearity and harmonic noise rejection characteristics of the FETs within the switch and thus lower the harmonics of the switch.

Methods of manufacture for a low control voltage switch

A sharp control voltage switch utilizing a plurality of field effect transistors (FETs) and a bypass resistance topology to sharpen the control voltage. Utilizing a total of six FETs allows the switch to operate at a low control voltage without the need to increase device periphery or die size. Feed-forward capacitors connected between the gate and source of an uppermost FET and the gate and drain of a lowermost FET are used to reduce signal distortion and improve the linearity and harmonic noise rejection characteristics of the FETs within the switch and thus lower the harmonics of the switch.

Apparatus, methods, and articles of manufacture for a switch having sharpened control voltage

Apparatus, methods and articles of manufacture for a low control voltage switch

A FET structure includes a FET including a gate having a plurality of gate fingers, a plurality of source fingers, and a plurality of drain fingers; and a feedforward capacitor electrically coupled with the FET for evenly or symmetrically distributing capacitance of the feedforward capacitor to the gate fingers and reducing the effect of distributed resistance along the gate.

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Dracut, MA, United States of America

Christopher N Brindle