Greatbatch Ltd.

Christopher Michael Williams

Robert A Stevenson

Warren S Dabney

Robert Shawn Johnson

Holly Noelle Moschiano

Scott Brainard

Richard L Brendel

Christine A Frysz

Henry R Halperin

Albert Clark Lardo

Daniel Robert Kaiser

Keith W Seitz

Thomas Marzano

Jason Woods

Buehl E Truex

Kishore Kumar Kondabatni

John E Roberts

Jeff Fleigle

Ryan Thomas Bauer

Qingshan Ye

Scott W Kelley

Robert Naugler

Barry C Muffoletto

Dominick J Frustaci

William C Thiebolt

Jose Luis Lorente-Adame

Haythem Hussein

Holly Noell Moschiano

William Thiebolt, Iii

Waren S Dabney

An AIMD includes a conductive housing, an electrically conductive ferrule with an insulator hermetically sealing the ferrule opening. A conductive pathway is hermetically sealed and disposed through the insulator. A filter capacitor is disposed on a circuit board within the housing and has a dielectric body supporting at least two active and two ground electrode plates interleaved, wherein the at least two active electrode plates are electrically connected to the conductive pathway on the device side, and the at least two ground electrode plates are electrically coupled to either the ferrule and/or the conductive housing. The dielectric body has a dielectric constant less than 1000 and a capacitance of between 10 and 20,000 picofarads. The filter capacitor is configured for EMI filtering of MRI high RF pulsed power by a low ESR, wherein the ESR of the filter capacitor at an MRI RF pulsed frequency or range of frequencies is less than 2.0 ohms.

Low equivalent series resistance RF filter for an AIMD

A hermetically sealed filtered feedthrough assembly for an AIMD includes an insulator hermetically sealed to a conductive ferrule or housing. A conductor is hermetically sealed and disposed through the insulator in non-conductive relation to the conductive ferrule or housing between a body fluid side and a device side. A feedthrough capacitor is disposed on the device side. A first low impedance electrical connection is between a first end metallization of the capacitor and the conductor. A second low impedance electrical connection is between a second end metallization of the capacitor and the ferrule or housing. The second low impedance electrical connection includes an oxide-resistant metal addition attached directly to the ferrule or housing and an electrical connection coupling the second end metallization electrically and physically directly to the oxide-resistant metal addition.

Low impedance oxide resistant grounded capacitor for an AIMD

RF filter on a circuit board for an active medical device (AMD) for handling high RF power induced in an associated implanted lead from an external RF field

An AIMD includes a conductive housing, an electrically conductive ferrule with an insulator hermetically sealing the ferrule opening. A conductive pathway is hermetically sealed and disposed through the insulator. A filter capacitor is disposed within the housing and has a dielectric body supporting at least two active and two ground electrode plates interleaved, wherein the at least two active electrode plates are electrically connected to the conductive pathway on the device side, and the at least two ground electrode plates are electrically coupled to either the ferrule and/or the conductive housing. The dielectric body has a dielectric constant less than 1000 and a capacitance of between 10 and 20,000 picofarads. The filter capacitor is configured for EMI filtering of MRI high RF pulsed power by a low ESR, wherein the ESR of the filter capacitor at an MRI RF pulsed frequency or range of frequencies is less than 2.0 ohms.

RF filter for an active medical device (AMD) for handling high RF power induced in an associated implanted lead from an external RF field

A hermetically sealed filtered feedthrough assembly for an AIMD includes an electrically conductive ferrule with an electrically conductive extension at least partially extending into the ferrule opening. An electrically non-conductive insulator hermetically seals the ferrule opening. An electrically conductive pathway is hermetically sealed and disposed through the insulator between a body fluid and device side. A filter capacitor is located on the device side. A first low impedance electrical coupling is between a first metallization of the filter capacitor and the pathway. A ground conductor is disposed through the filter capacitor in non-conductive relation with the at least one active and ground electrode plates, where the ground conductor is electrically coupled to the extension of the ferrule. An oxide-resistant metal addition is disposed on the device side and electrically couples the ground conductor to the second metallization of the filter capacitor.

An energy management system that facilitates the transfer of high frequency energy induced on an implanted lead or a leadwire includes an energy dissipating surface associated with the implanted lead or the leadwire, a diversion or diverter circuit associated with the energy dissipating surface, and at least one switch disposed between the diversion circuit and the AIMD electronics for diverting energy in the implanted lead or the leadwire through the diversion circuit to the energy dissipating surface. The switch may comprise a single or multi-pole double or single throw switch. The diversion circuit may be either a high pass filter or a low pass filter.

Switched safety protection circuit for an AIMD system during exposure to high power electromagnetic fields

An RF filter for an active medical device (AMD), for handling RF power induced in an associated lead from an external RF field at a selected MRI frequency or range frequencies includes a capacitor having a capacitance of between 100 and 10,000 picofarads, and a temperature stable dielectric having a dielectric constant of 200 or less and a temperature coefficient of capacitance (TCC) within the range of plus 400 to minus 7112 parts per million per degree centigrade. The capacitor's dielectric loss tangent in ohms is less than five percent of the capacitor's equivalent series resistance (ESR) at the selected MRI RF frequency or range of frequencies.

An energy management system facilitates the transfer of high frequency energy coupled into an implanted lead at a selected RF frequency or frequency band, to an energy dissipating surface. This is accomplished by conductively coupling the implanted lead to the energy dissipating surface through an energy diversion circuit including one or more passive electronic network components whose impedance characteristics are at least partially tuned to the implanted lead's impedance characteristics.

Tuned energy balanced system for minimizing heating and/or to provide EMI protection of implanted leads in a high power electromagnetic field environment

Capacitor for an active implantable medical device (AIMD) for handling high RF power induced in an implanted lead from an external RF field

An energy management system that facilitates the transfer of high frequency energy induced on an implanted lead or a leadwire includes an energy dissipating surface associated with the implanted lead or the leadwire and at least one non-linear circuit element switch for diverting energy in the implanted lead or the leadwire to the energy dissipating surface. In alternate configurations, the switch may be disposed so that it electrically opens the implanted lead or the leadwire when diverting energy to the energy dissipating surface. The non-linear circuit element switch is typically a PIN diode.

Circuits for minimizing heating of an implanted lead and/or providing EMI protection in a high power electromagnetic field environment

An energy management system that facilitates the transfer of high frequency energy induced on an implanted lead or a leadwire includes an energy dissipating surface associated with the implanted lead or the leadwire, a diversion or diverter circuit associated with the energy dissipating surface, and at least one non-linear circuit element switch for diverting energy in the implanted lead or the leadwire through the diversion circuit to the energy dissipating surface. In alternate configurations, the switch may be disposed between the implanted lead or the leadwire and the diversion circuit, or disposed so that it electrically opens the implanted lead or the leadwire when diverting energy through the diversion circuit to the energy dissipating surface. The non-linear circuit element switch is typically a PIN diode. The diversion circuit may be either a high pass filter or a low pass filter.

Switched diverter circuits for minimizing heating of an implanted lead and/or providing EMI protection in a high power electromagnetic field environment

An energy management system that facilitates the transfer of high frequency energy induced on an implanted lead or a leadwire includes an energy dissipating surface associated with the implanted lead or the leadwire, a diversion or diverter circuit associated with the energy dissipating surface, and at least one switch for diverting energy in the implanted lead or the leadwire through the diversion circuit to the energy dissipating surface. In alternate configurations, the switch may be disposed between the implanted lead or the leadwire and the diversion circuit, or disposed so that it electrically opens the implanted lead or the leadwire when diverting energy through the diversion circuit to the energy dissipating surface. The switch may comprise a single or multi-pole double or single throw switch. The diversion circuit may be either a high pass filter or a low pass filter.

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Lancaster, NY, United States of America

Christopher Michael Williams