Delphi Technologies, Inc.

Gm Global Technolgoy Operations, Inc.

Wayne State University

China Automotive Systems, Inc.

Christopher Mark Thrush

Joseph Pierre Heremans

Changhe Huang

Donald T Morelli

Thaddeus Schroeder

Dale Lee Partin

Gregory William Auner

Haimian Cai

Michelle Ann Brusatori

Siqi Cheng

David Kay Lambert

Larry Max Oberdier

Louis Green

A differential angle sensor for measuring a differential angle between an input shaft and an output shaft includes a target assembly fixed to rotate with one of the shafts and a ring magnet with equidistantly spaced magnet segments fixed to rotate with the other one of the shafts. The target assembly includes four identical targets extending about the common axis parallel and axially spaced apart from one another, and each having a plurality of wedge-shaped teeth extending radially toward the ring magnet. A first magnetic field sensor is disposed between first and second targets for measuring a first magnetic field strength therebetween. A second magnetic field sensor is disposed between third and fourth targets for measuring a second magnetic field strength. The targets are all circumferentially offset relative to one another such that the magnetic field strengths each vary with the differential angle between the shafts and differently from one-another.

Differential angle sensor

A torque and angular sensor includes a differential angle sensor to precisely measure a differential angle between an input shaft and an output shaft and an angular position sensor to measure the angle of at least one of the shafts over a full angular range. The differential angle sensor measures an output rotation angle of an output target and an input rotation angle of an input target using changing voltages in taps on the input and output coils, which each carry an AC excitation current and which are each inductively coupled with teeth on targets fixed to rotate with one of the shafts. Input shaft rotation angle region is combined with the input angular position as a rotation angle composite. A raw torque angle is determined based on the difference between the input and output rotation angles. Rotational and Linear compensation provides a high-precision torque angle.

Torque and angular sensor

An apparatus for performing Raman spectral analysis of a sample is described, comprising a coherent light source, an first optical chain to direct the coherent light to impinge on the sample, a second optical chain to direct the scattered light onto a diffraction grating, and a third optical chain to direct the diffracted light onto detection array. The diffraction grating is a stairstep with a metalized surface, and a plurality of metalized stripes on a flat surface is disposed in a direction orthogonal to the long dimension of the stairsteps. The region between the flat surface and the stairstep is transparent. The zeroth-order fringe is selected by a slit and directed onto camera. The resultant interferogram is Fourier transformed to produce a representation of the Raman spectrum.

Static interferometer with step-style reflective element

An apparatus for performing Raman spectral analysis of a sample is described, comprising a coherent light source, an first optical chain to direct the coherent light to impinge on the sample, a second optical chain to direct the scattered light onto a diffraction grating, and a third optical chain to direct the diffracted light onto detection array. The diffraction grating is a plurality of alternating-slope stairsteps, wherein the portion of the step disposed parallel to the base of the diffraction grating is disposed so as to be orthogonal to the path of the scattered light from the second optical chain. The zeroth-order fringe is selected by a slit and directed onto camera. The resultant interferogram is Fourier transformed to produce a representation of the Raman spectrum.

Fourier-transform interferometer with staircase reflective element

A chemical vapor sensor is provided that passively measures a chemical species of interest with high sensitivity and chemical specificity. In an aspect, ethanol vapor in a vehicle cabin is measured, and sufficient sensitivity is provided to passively detect a motor vehicle driver that exceeds a legal limit of blood alcohol concentration (BAC), for use with vehicle safety systems. The sensor can be situated in an inconspicuous vehicle cabin location and operate independently without requiring active involvement by a driver. A vapor concentrator is utilized to amplify a sampled vapor concentration to a detectible level for use with an infrared (IR) detector. In an aspect, in comparison to conventional chemical sensors, the sensitivity of detection of ethanol vapor is increased by a factor of about 1,000. Further, a single channel of infrared detection is utilized avoiding spurious infrared absorption and making the chemical vapor sensor less costly to implement.

Chemical vapor sensor

A thermoelectric material having enhanced Seebeck coefficient is characterized by a microstructure comprising nanoscale Pb inclusions dispersed in matrix substantially composed of PbTe. The excess Pb is obtained either by adding Pb in an amount greater than the stoichiometric amount needed to form PbTe, or by adding an additive effective to getter Te so as to produce the desired excess. The method is generally applicable to enhance thermoelectric properties of compounds of Pb, Sn or Ge, and Te, Se, or S.

Thermoelectric materials comprising nanoscale inclusions to enhance seebeck coefficient

A brake system including a brake pad shaped and located to apply pressure to a brake rotor and an actuator shaped and located to apply pressure to the brake pad to cause the brake pad to apply pressure to the rotor. The system further includes a sensor material which varies in resistance when the actuator applies pressure to the brake pad, wherein the sensor material include an electrically insulating material with electrically conductive particles distributed therein. The system further includes a controller operatively coupled to the sensor material to detect a change in resistance of the sensor material.

Brake force sensor

A thermoelectric material that exhibits enhanced thermoelectric power, and thus an improvement in the thermoelectric figure of merit. Bismuth, as elemental bismuth, a bismuth alloy, a bismuth intermetallic compound, a mixture of these, or any of these including a dopant, is embedded in the pores of a host material having an average pore size in the range of about 5-15 nm. A method of making a composite thermoelectric material is also provided in which a porous host material is provided having an average pore size of about 5-15 nm, and a vapor of a bismuth-based material is caused to flow into the pores from a vapor inlet side of the host material to a vapor outlet side. The host material is then cooled from the vapor outlet side to progressively condense the vapor in the holes in the direction from the outlet side to the inlet side to progressively form nanowires of the bismuth-based material in the pores.

Enhanced thermoelectric power in bismuth nanocomposites

A method is disclosed for forming an array of submicron-sized wires in a host body. In the method, the vapor of a metal, such as bismuth, is caused to flow upward through a horizontal refractory plate having many through holes, 200 nanometers or less in diameter, until all foreign material is excluded from the holes and then the plate is cooled from the top side to progressively and simultaneously condense said vapor to form said wires in the holes.

Process to prepare an array of wires with submicron diameters

A semiconductor film is provided characterized by having high carrier mobility and carrier density. The semiconductor film is doped with the rare-earth element erbium so as to improve its temperature stability. The semiconductor film is thereby particularly suited for use as a magnetic field sensing device, such as a Hall effect sensor or magnetoresistor. The semiconductor film is formed from a narrow-gap Group III-V compound, preferably indium antimonide, which is n-doped with the erbium to provide an electron density sufficient to increase temperature stability. In particular, the semiconductor film is characterized by a nini-structure which is generated using a slab-doping technique. The slab-doping process encompasses the growing of alternating layers of doped and undoped layers of the Group III-V compound, with the doped layers being substantially thinner than the undoped layers, and preferably as thin as one atomic plane. The electron density establishes an average extrinsic electron density within the combined undoped and doped layers of the Group III-V compound. The density of erbium in the doped layers is preferably sufficient to yield an average extrinsic electron density of between about 1.times.10.sup.16 cm.sup.-3 and about 1.times.10.sup.18 cm.sup.-3, while also achieving a carrier mobility greater than about 30,000 cm.sup.-2 /V-s at room temperature.

Rare earth slab doping of group III-V compounds

For increased sensitivity, an improved position sensor includes a magnetic circuit in which the stationary portion includes a permanent magnet whose width is optimally 1.5 times the tooth pitch of the exciter portion of the sensor and the magnet face proximate the exciter includes a thin layer of ferromagnetic material over which is centered a narrow magnetic sensing element, such as a magnetoresistor. The sensing element has a width typically less than the tooth width. The sensing element includes a thin film of a monocrystalline semiconductive material, preferably having only a moderate bulk mobility and a larger band gap, such as indium arsenide. Current carriers flow along the length of the thin film in a surface accumulation layer, effective to provide a significant apparent increase in mobility and conductivity of said semiconductive material, and an actual increase in magnetic sensitivity and temperature insensitivity. The flux density is typically applied by appropriate magnet thickness or choice of magnet material without the need of a flux guide.

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Shelby Township, MI, United States of America

Christopher Mark Thrush