Intel Corporation

Christopher L Rumer

Paul A Koning

Sabina J Houle

Ashay A Dani

Eric Jin Li

Daoqiang Lu

Saikumar Jayaraman

Omkar G Karhade

Nitin A Deshpande

Robert M Nickerson

Sergei L Voronov

Gudbjorg H Oskarsdottir

Tiffany Byrne

Darcy E Fleming

James Chris Matayabas, Jr

Thomas John Fitzgerald

Tian-An Chen

Vijay Wakharkar

Gregory S Clemons

Robert L Sankman

Debendra Mallik

Wei Ey Li

Mitul Bharat Modi

Edvin Cetegen

Xavier Francois Brun

Zhimin Wan

Vipul V Mehta

Biswajit Sur

Sri Chaitra J Chavali

Oswald L Skeete

Edward A Zarbock

Shan Zhong

Kuljeet Singh

Ziyin Lin

Thomas J De Bonis

Jeff Wienrich

Hsin-Wei Wang

Michele J Berry

Haifa Hariri

Yang Guo

Sudipto Neogi

Boon Seng Tan

Mike T Reiter

Jeffrey S Winton

Soud Choudhury

Ifeanyi Okafor

Nai-Yuan Liu

Nazmiye Acikgoz Akbay

Fadi Y Hafez

An integrated circuit assembly may be formed comprising an electronic substrate, a first and second integrated circuit device each having a first surface, a second surface, at least one side extending between the first and second surface, and an edge defined at an intersection of the second surface and the at least one side of each respective integrated circuit device, wherein the first surface of each integrated circuit device is electrically attached to the electronic substrate, an underfill material between the first surface of each integrated circuit device and the electronic substrate, and between the sides of the first and second integrated circuit devices, and at least one barrier structure adjacent at least one of the edge of first integrated circuit device and the edge of the second integrated circuit device, wherein the underfill material abuts the at least one barrier structure.

Barrier structures for underfill containment

The present disclosure is directed to systems and methods for improving heat distribution and heat removal efficiency in PoP semiconductor packages. A PoP semiconductor package includes a first semiconductor package that is physically, communicably, and conductively coupled to a stacked second semiconductor package. A thermally conductive member that includes at least one thermally conductive member may be disposed between the first semiconductor package and the second semiconductor package. The thermally conductive member may include: a single thermally conductive element; multiple thermally conductive elements; or a core that includes at least one thermally conductive element. The thermally conductive elements are thermally conductively coupled to an upper surface of the first semiconductor package and to the lower surface of the second semiconductor package to facilitate the transfer of heat from the first semiconductor package to the second semiconductor package.

Thermally coupled package-on-package semiconductor packages

Systems and methods for improving heat distribution and heat removal efficiency in PoP semiconductor packages are provided. A PoP semiconductor package includes a first semiconductor package that is physically, communicably, and conductively coupled to a stacked second semiconductor package. A gap forms between the upper surface of the first semiconductor package and the lower surface of the second semiconductor package. Additionally, interstitial gaps form between each of the PoP semiconductor packages disposed on an organic substrate. A curable fluid material, such as a molding compound, may be flowed both in the interstitial spaces between the PoP semiconductor packages and into the gap between the upper surface of the first semiconductor package and the lower surface of the second semiconductor package.

Package on package thermal transfer systems and methods

Systems and methods for improving heat distribution and heat removal efficiency in PoP semiconductor packages are provided. A PoP semiconductor package includes a first semiconductor package that is physically, communicably, and conductively coupled to a stacked second semiconductor package. A gap forms between the upper surface of the first semiconductor package and the lower surface of the second semiconductor package. on an organic substrate. A curable fluid material, such as a molding compound, may be flowed both in the interstitial spaces between the PoP semiconductor packages and into the gap between the upper surface of the first semiconductor package and the lower surface of the second semiconductor package.

Formulations and processes for forming wafer coat layers are disclosed. In one embodiment, an organic surface protectant is incorporated into a wafer coat formulation deposited onto a semiconductor wafer prior to the laser scribe operation. Upon removal of the wafer coat layer, the organic surface protectant remains on the bumps and thereby prevents oxidation of the bumps between die prep and chip and attach. In an alternative embodiment, an ultraviolet light absorber is added to the wafer coat formulation to enhance the wafer coat layer's energy absorption and thereby improve the laser's ability to ablate the wafer coat layer. In an alternative embodiment, a conformal wafer coat layer is deposited on the wafer and die bumps, thereby reducing wafer coat layer thickness variations that can impact the laser scribing ability.

Semiconductor wafer coat layers and methods therefor

Embodiments of the invention includes a heat dissipating device. The heat dissipating device includes a main body having a surface, wherein the surface is plated or coated with at least two different metals to form a design effective for bonding to solder and for adhering to polymer in a polymer solder hybrid. The heat dissipating device also includes surface perturbations.

Heat dissipating device with preselected designed interface for thermal interface materials

An integrated heat spreader, heat sink or heat pipe with pre-attached phase change thermal interface material and a method of making an electronic assembly.

Integrated heat spreader, heat sink or heat pipe with pre-attached phase change thermal interface material and method of making an electronic assembly

In some embodiments, a method includes providing a composition which includes a base at least partially filled with filler particles and applying the composition as an underfill composition. At least some of the filler particles are electrically conductive.

No-flow underfill composition and method

A method is described for laser scribing or dicing portions of a workpiece using multi-source laser systems. In one embodiment, a first laser melts portions of the workpiece prior to a second laser ablating the portions of the workpiece.

Dual pulsed beam laser micromachining method

A device and method identify and compensate for tensile stress due to heat-caused expansion and contraction between an integrated heat spreader and thermal interface material. This device and method change the shape of the integrated heat spreader based upon the identification of the location of the highest tensile and/or shear stress so that additional thermal interface material is deposited between the integrated heat spreader and a die. Utilizing this method and device, heat is efficiently transferred from the die to the integrated heat spreader.

Apparatus to compensate for stress between heat spreader and thermal interface material

A thermal interface material is described for thermal coupling of an electronic component to a thermally conductive member. The thermal interface material includes a viscoelastic polymer matrix material, fusible solder particles in the matrix material, and filler particles in the matrix material. The solder particles have a melting temperature below a selected temperature (e.g. 157&#xb0; C. for indium) and the filler particles have a melting temperature substantially above the selected temperature (e.g. 961&#xb0; C. for silver). The filler particles keep the thermal interface material intact under adverse thermal and stress conditions.

Thermal interface material and electronic assembly having such a thermal interface material

A laser micromachining method is disclosed wherein a workpiece is milled using an incident beam from a laser beam focused above the surface of the workpiece. The incident beam is guided by a plasma channel generated by the incident beam. The plasma channel, which has a relatively constant diameter over an extended distance, is generated by continual Kerr effect self-focusing balanced by ionization of air beam defocusing.

Laser micromachining method

Growing community of inventors

Chandler, AZ, United States of America

Christopher L Rumer