At&t Bell Laboratories

Bell Telephone Laboratories

Christopher L Allyn

Arthur C Gossard

Stuart H Wemple

William Wiegmann

Wolfgang O Schlosser

David E Iglesias

Peter G Flahive

III-V semiconductor devices such as, e.g., MESFET, JFET, MOSFET, and IGFET devices are provided with relatively high-ohmic gates or wide gate finger widths as is desirable for maximum utilization of a semiconductor surface. For example, aluminum gate electrodes having a cross-sectional area of 1.2 square micrometer and a length of 300 micrometers or more are used. The resulting devices have unexpectedly high power handling capability.

High-power III-V semiconductor device

A unipolar, rectifying semiconductor device is described. Rectification is produced by an asymmetric potential barrier created by a sawtooth-shaped composition profile of Al.sub.x Ga.sub.1-x As between layers of n-type GaAs. Single and multiple barriers, as well as doped and undoped barriers, show rectification. Also described is the incorporation of this type of device in an infrared detector, a hot electron transistor and mixer diodes.

Graded bandgap rectifying semiconductor devices

Growing community of inventors

Morristown, NJ, United States of America

Christopher L Allyn