Osram Opto Semiconductors Gmbh

Osram Oled Gmbh

Universidad Politécnica De Madrid

Christopher Kölper

Patrick Rode

Martin Mandl

Martin Straβburg

Alexander F Pfeuffer

Martin Strassburg

David Racz

Norwin Von Malm

Peter Brick

Matthias Sabathil

Lutz Höppel

Alexander Linkov

Werner Bergbauer

Ulrich Streppel

Philipp Drechsel

Christopher Wiesmann

Philipp Pust

Andreas Waag

Georg Roßbach

Steven Albert

Martin Straßburg

Enrique Calleja-Pardo

Ana Maria Bengoechea Encabo

Miguel Angel Sanchez-Garcia

Johannes Ledig

Richard Neumann

An optoelectronic component includes a carrier, wherein the carrier includes a surface, reflective barriers are formed over the surface of the carrier, the reflective barriers divide the surface of the carrier into pixels, each pixel respectively includes at least one optoelectronic semiconductor chip arranged on the surface of the carrier, the optoelectronic semiconductor chip is configured to emit electromagnetic radiation, the optoelectronic semiconductor chip includes an upper side, the upper side faces away from the surface of the carrier, and a reflective covering is arranged on the upper side of the optoelectronic semiconductor chip.

Optoelectronic component

A semiconductor component has a semiconductor chip that generates an electromagnetic primary radiation having a first peak wavelength, having a first conversion element, which has a quantum structure, wherein the quantum structure is formed to partially shift the primary radiation to a secondary radiation having a second peak wavelength, wherein a second conversion element is provided which has a luminescent material, wherein the luminescent material is formed to shift an electromagnetic radiation to a tertiary radiation having a dominant wavelength, wherein the first conversion element is formed to generate secondary radiation, which has a lower peak wavelength than the dominant wavelength of the tertiary radiation.

Semiconductor component

An optoelectronic semiconductor chip includes a multiplicity of active regions arranged at a distance from one another, and a continuous current spreading layer, wherein at least one of the active regions has a main extension direction, one of the active regions has a core region formed with a first semiconductor material, the active region has an active layer covering the core region at least in directions transversely with respect to the main extension direction of the active region, the active region has a cover layer formed with a second semiconductor material and covers the active layer at least in directions transversely with respect to the main extension direction of the active region, and the current spreading layer covers all cover layers of the active region.

Radiation emitting or receiving optoelectronic semiconductor chip

A light-emitting diode chip comprising:&#x2014;a semiconductor body () having a plurality of active regions (), wherein&#x2014;at least one of the active regions () has at least two subregions (),&#x2014;the active region () has at least one barrier region () arranged between two adjacent subregions () of said at least two subregions (),&#x2014;the at least two subregions () emit light of mutually different colour during operation of the light-emitting diode chip,&#x2014;in at least one of the subregions () the emission of light is generated electrically, and&#x2014;the barrier region () is configured to hinder a thermally activated redistribution of charge carriers between the two adjacent subregions (), is specified.

Light-emitting diode chip

An optoelectronic semiconductor chip includes a multiplicity of active regions, arranged at a distance from one another, and a reflective layer arranged at an underside of the multiplicity of active regions, wherein at least one of the active regions has a main extension direction, one of the active regions has a core region formed with a first semiconductor material, the active region has an active layer, covering the core region at least in directions transversely with respect to the main extension direction of the active region, the active region has a cover layer formed with a second semiconductor material and covers the active layer at least in directions transversely with respect to the main extension direction of the active region, and the reflective layer reflects electromagnetic radiation generated during operation in the active layer.

An optoelectronic semiconductor chip includes a number active regions that are arranged at a distance from each other and a substrate that is arranged on an underside of the active regions. One of the active regions has a main extension direction. The active region has a core region that is formed using a first semiconductor material. The active region has an active layer that covers the core region at least in directions perpendicular to the main extension direction of the active region. The active region has a cover layer that is formed using a second semiconductor material and covers the active layer at least in directions perpendicular to the main extension direction of the active region.

Optoelectronic semiconductor chip

An optoelectronic semiconductor chip includes a semiconductor layer stack having an active layer that generates radiation, and a radiation emission side, and a conversion layer disposed on the radiation emission side of the semiconductor layer stack, wherein the conversion layer converts at least a portion of the radiation, which is emitted by the active layer, into radiation of a different wavelength, the radiation emission side of the semiconductor layer stack has a first nanostructuring, and the conversion layer is disposed in this first nanostructuring.

Optoelectronic semiconductor chip and method for the production thereof

An optoelectronic semiconductor chip includes a semiconductor layer stack and a radiation exit face or radiation entrance face, wherein the semiconductor layer stack includes an active layer that generates or receives electromagnetic radiation, and a plurality of nanostructures arranged in the semiconductor layer stack and/or on the radiation exit or entrance face, at least some of the nanostructures including at least one substructure.

Optoelectronic semiconductor chip and method for producing same

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Wuppertal, Germany

Christopher Kölper