Element Six Technologies Limited

Element Six Gmbh

Element Six (uk) Limited

Diamond Microwave Devices Limited

Other

Joy Global Underground Mining LLC

Electrolytic Ozone, Inc.

Christopher John Howard Wort

Geoffrey Alan Scarsbrook

John Robert Brandon

Daniel James Twitchen

Joseph Michael Dodson

Santonu Ghosh

Jonathan James Wilman

Steven Edward Coe

Charles Simon James Pickles

Alexander Lamb Cullen

Ian Friel

Richard Stuart Balmer

Vijay Nadasen Vythilingum

Timothy Peter Mollart

Andrew John Whitehead

Neil Perkins

John Lloyd Collins

Carlton Nigel Dodge

Stephen David Williams

Mark Robin McClymont

Paul Nicolas Inglis

Florin Udrea

Herman Philip Godfried

Gehan Anil Joseph Amaratunga

Matthew Lee Markham

Clive Edward Hall

Nalin L Rupesinghe

Randy Arnold

Evert Pieter Houwman

John R Frederick

Paul Nicholas Inglis

Erhard Kohn

Gerrit Jan Pels

James Krellner

David Meade

Bulent Tiryaki

Jeremy Suhail Rashid

John Hallberg

William Wayne Leahy

Stephanie Liggins

Peter Robert Bush

Serena Bonetti

Bernd Heinrich Ries

Wilhelmus Gerarda Maria Nelissen

Luiz Fernando Penna Franca

Paulus Adrianus Cornelis Kriele

Markus Kilian Scharting

Johannes Cornelis Lamers

Bartholomeus Mathias Van Oerle

Paulus Geradus Hendricus Maria Spaay

Mihai Brezeanu

Antonella Tajani

Michael Schwitters

Graeme David Dufferwiel

Charles Gerard Sweeney

James E Folkerts

Jonathan Christopher Newland

Nalin Lalith Rupesinghe

William Joseph Yost Iii

Mihai Department Of Engineering Brezeanu

Jeremy Suhail Dept Of Engineering Uni Rashid

A cutting element () for a cutting tool has a sensor element, a body of super hard material () having a working surface, the sensor element being attached to a portion of the super hard material (), and one or more conducting wires extending from the sensor element through one or more channels extending through the body of super hard material. The sensor element is bonded to the body of superhard material through a layer of ceramic adhesive.

Cutting elements for a cutting tool and methods of making and using same

A cutter assembly for a cutting tool has a super-hard volume of super-hard material having a proximal end and a distal end and including a cavity; and a cover member. The super-hard volume has a super-hard surface at the distal end including a cutting edge. The cavity has a cavity open end at the distal end. The super-hard surface includes a cavity peripheral area coterminous with the cavity open end and the cover member has a cover peripheral area configured to mate with the cavity peripheral area to allow the cover member to cover the cavity at the cavity open end, the covered cavity providing a housing chamber within the super-hard volume. A method of making a cutter assembly is also disclosed.

Cutter assembly and methods for making same

A sensor element for a cutting tool () has a hard portion () having a sensing surface (), first and second electrodes (), first and second sets of thermocouple wires () and an electrically insulating portion. The first and second electrodes () are arranged to allow electric current to flow when the sensing surface () contacts external material in response to the cutting tool engaging the external material. A first thermocouple junction () is operable to indicate a temperature of the first electrode and a second thermocouple junction () is operable to measure temperature of the second electrode.

Sensor elements and assemblies, cutting tools comprising same and methods of using same

A sensor element for a cutting tool has a hard portion having a first sensing surface, first and second electrodes, and first and second sets of thermocouple wires, and an electrically insulating portion. The second electrode has a second sensing surface, The hard portion comprises hard and/or super-hard material and the first and second electrodes comprise electrically conductive hard and/or super-hard material, the hard portion isolating the first sensing surface from the second sensing surface. The second electrode is attached to or forms part of an electrically conductive region of the hard portion or a region attached thereto. Electric current flows between the first and second electrodes through external material when the sensing surfaces contact the material in response to the cutting tool engaging the material. The first and second electrodes are operable to indicate any one or more of a temperature of the first and second electrodes, and conductivity between the electrodes.

A composite product has a body of polycrystalline diamond (PCD) material having a PCD proximal end and a PCD distal end, an electronic device including an electronic component, and a connection portion joining the electronic device to the body at the PCD distal end, and comprising metallic join material having a liquidus temperature of 600° C. to 950° C. at atmospheric pressure. At least one of the electronic device and the body includes an electrically insulating portion between the electronic component and the PCD proximal boundary establishing an electrical open circuit condition between the electronic component and the PCD proximal boundary. A method of making the composite product is also disclosed.

Composite polycrystalline diamond (PCD) product and methods of making same

A microwave plasma reactor for manufacturing synthetic diamond material via chemical vapour deposition includes a microwave generator configured to generate microwaves at a frequency f, a plasma chamber that defines a resonance cavity for supporting a microwave resonance mode, a microwave coupling configuration for feeding microwaves from the microwave generator into the plasma chamber, a gas flow system for feeding process gases into the plasma chamber and removing them therefrom, and a substrate holder disposed in the plasma chamber and having a supporting surface for supporting a substrate on which the synthetic diamond material is to be deposited in use. The resonance cavity is configured to have a height that supports a TMresonant mode at the frequency f and is further configured to have a diameter that satisfies the condition that a ratio of the resonance cavity height/the resonance cavity diameter is in the range 0.3 to 1.0.

Microwave plasma reactor for manufacturing synthetic diamond material

A cutting element () for a tool with an electrically conductive track () formed at a surface region. The cutting element () comprises a HPHT produced polycrystalline diamond body. The conductive track () comprises graphite such that the electrically conductive track () has an electrical resistance substantially lower than that of the surface region.

Tool cutting element

A microwave plasma reactor for manufacturing synthetic diamond material via chemical vapour deposition, the microwave plasma reactor includes a plasma chamber, a substrate holder, a microwave coupling configuration for feeding microwaves into the plasma chamber, and a gas flow system for feeding process gases into the plasma chamber and removing them therefrom. The gas flow system includes a gas inlet array having a plurality of gas inlets for directing the process gases towards the substrate holder. The gas inlet array includes at least six gas inlets disposed in a substantially parallel or divergent orientation relative to a central axis of the plasma chamber.

A cutting bit assembly for a mining machine includes a holder having a first surface, a second surface, and a bore extending therebetween, and a bit having a first end and a second end. The bit further includes a tip, a shank, and a shoulder positioned between the tip and the shank. The shank is positioned in the bore of the holder and defines a shank axis. The shoulder engages the first surface of the holder. The shank includes a projection adjacent the second end. The cutting bit assembly also includes a retainer having a groove and a resilient member. The groove engages a portion of the projection. The resilient portion engages the second surface of the holder and biases the retainer along the shank axis and away from the holder.

Cutting bit assembly

A method of fabricating a plurality of single crystal CVD diamonds, the method comprising: coating a carrier substrate with a layer of polycrystalline CVD diamond material; bonding a plurality of single crystal diamond substrates to the layer of polycrystalline CVD diamond material on the carrier substrate; growing single crystal CVD diamond material on the plurality of single crystal diamond substrates to form a plurality of single crystal CVD diamonds; and separating the plurality of single crystal CVD diamonds from the layer of polycrystalline CVD diamond material on the carrier substrate and any polycrystalline CVD diamond material which has grown between the plurality of single crystal CVD diamonds to yield a plurality of individual single crystal CVD diamonds.

Method of fabricating a plurality of single crystal CVD synthetic diamonds

A microwave plasma reactor for manufacturing synthetic diamond material via chemical vapor deposition, the microwave plasma reactor comprising: a microwave generator configured to generate microwaves at a frequency f; a plasma chamber comprising a base, a top plate, and a side wall extending from said base to said top plate defining a resonance cavity for supporting a microwave resonance mode, wherein the resonance cavity has a central rotational axis of symmetry extending from the base to the top plate, and wherein the top plate is mounted across said central rotational axis of symmetry; a microwave coupling configuration for feeding microwaves from the microwave generator into the plasma chamber; a gas flow system for feeding process gases into the plasma chamber and removing them therefrom; and a substrate holder disposed in the plasma chamber and comprising a supporting surface for supporting a substrate on which the synthetic diamond material is to be deposited in use; wherein the resonance cavity is configured to have a height, as measured from the base to the top plate of the plasma chamber, which supports a TMresonant mode between the base and the top plate at said frequency f, and wherein the resonance cavity is further configured to have a diameter, as measured at a height less than 50% of the height of the resonance cavity as measured from the base, which satisfies the condition that a ratio of the resonance cavity height/the resonance cavity diameter is in the range 0.3 to 1.0.

The present disclosure relates to substrates for use in microwave plasma reactors. Certain substrates include a cylindrical disc of a carbide forming refractory metal having a flat growth surface on which CVD diamond is to be grown and a flat supporting surface opposed to said growth surface. The cylindrical disc may have a diameter of 80 mm or more. The growth surface may have a flatness variation no more than 100 mm The supporting surface may have a flatness variation no more than 100 mm.

Microwave plasma reactors and substrates for synthetic diamond manufacture

Disclosed herein are methods of manufacturing synthetic CVD diamond material including orienting and controlling process gas flow in a microwave plasma reactor to improve performance. The microwave plasma reactor includes a gas flow system with a gas inlet comprising one or more gas inlet nozzles disposed opposite the growth surface area and configured to inject process gases towards the growth surface area. The method comprises injecting process gases towards the growth surface area at a total gas flow rate equal to or greater than 500 standard cmper minute wherein the process gases are injected into the plasma chamber through the one or more gas inlet nozzles with a Reynolds number in a range 1 to 100.

Methods of manufacturing synthetic diamond material by microwave plasma enhanced chemical vapor deposition from a microwave generator and gas inlet(s) disposed opposite the growth surface area

A method of cutting a super-hard material () using an electron beam (), wherein the electron beam () is directed onto a surface of the super-hard material () and moved relative to the surface such that the electron beam () moves across the surface of the super-hard material () at an electron beam scanning velocity in a range 100 to 5000 mmsto cut the super-hard material ().

Method of cutting super-hard materials using an electron beam and a range of beam scanning velocities

A microwave plasma reactor for manufacturing synthetic diamond material via chemical vapour deposition, the microwave plasma reactor comprising:

Growing community of inventors

Ascot, United Kingdom

Christopher John Howard Wort