Alcatel

Christopher Janz

Beatrice Dagens

Jean-Yves Emery

Bruno Lavigne

B&eacute;atrice Dagens

Dominique Chiaroni

Leon Goldstein

Patrick Brindel

Michael Schilling

Klaus Wunstel

Denis Leclerc

Fabrice Devaux

Hans Bissessur

Fran&ccedil;ois Dorgeuille

Fabienne Gaborit

Allan Kloch

David Wolfson

Tina Fjelde

Patricia Guerber

Domonique Chiaroni

Device for regenerating optical signs

An optical signal regeneration device having an interferometric structure with two arms. Each of the arms has a medium, the optical power output of which is variable with the optical power input. The first arm receives, through an input coupler, a continuous wave and the signal to be regenerated. The second arm receives through the input coupler, a continuous wave signal and a clock signal. A filter, centered on the continuous wave wavelength, receives the output signal of the interferometric structure through the coupler. The filter output signal constitutes the regenerated R signal.

3R optical signal regeneration

An optical signal regenerator includes a mechanism for reconstituting an optical signal carrier wave. The optical signal is thus regenerated on the same wavelength as the incoming carrier wave.

Regenerator with reconstitution of an optical signal carrier wave

To format a power modulated input optical signal, at the same time as improving its power dynamic range and the extinction rate of the output signal, a device for formatting binary optical signals includes a first stage for supplying a modulating signal having stabilized high levels as a function of the input signal and an interferometer structure second stage receiving the modulating signal and a probe wave power modulated in phase opposition to the modulation of the modulating signal. The low and high levels of the probe wave are stabilized. Applications include optical transmission.

Device for formatting binary optical signals

An active structure in the semiconductor die of an amplifier or converter includes a plurality of stacked active layers with different compositions. The different compositions lead to a spectral offset between the respective gain bands of the layers which widens the gain band of the amplifier or the optical bandwidth of the converter. Applications include fiber optic telecommunication networks.

Semiconductor optical component and amplifier and wavelength converter consisting thereof

The invention relates to an optical component based on semi-conductor optical amplifiers in which the number of independent electrodes is reduced. The component has different regions (,) with the same vertical structure wherein an active waveguide (,) is buried between the upper and lower buffer layers. These regions each have lower and upper electrodes (,, E,, E,) for the purpose of injecting into them equal or different values of current density. This component is characterized in that at least one (,) of the said electrodes covers a number of regions (,) and has distributed resistivity which is adjusted depending on the region under consideration.

Optical component based on semi-conductor optical amplifiers having a reduced number of independent electrodes

To increase its saturation threshold very strongly without degrading its gain, whilst remaining compatible with any semiconductor amplifier structure or technology, a semiconductor optical amplifier includes an input coupler having an input port and g output ports and an output coupler having g input ports and one output port. The q output ports of the input coupler are respectively connected to the q input ports of the output coupler by q semiconductor optical amplifiers having the same amplification characteristics. Applications include transmission of optical signals and to producing 'all optical' switching devices.

Semiconductor optical amplifier device

An integrated interferometer structure, in particular for optical signal wavelength converters, includes a first branch and a second branch including at least a first semiconductor optical amplifier coupled to input and/or output peripheral semiconductor optical amplifiers. The structure includes an attenuation section between the output of at least one amplifier of one branch and the input of the output peripheral amplifier and/or the length of the waveguide of at least one peripheral amplifier is less than 300 .mu.m. Applications in telecommunications, in particular for routing signals.

Integrated interferometer structure

The invention relates to wavelength converters for optical signals, as used in telecommunications, in particular for routing signals. The invention relates in particular to a wavelength converter including an interferometer structure for delivering an output optical signal, in which converter first and second branches, including at least one first semiconductor optical amplifier, are coupled to input peripheral semiconductor optical amplifiers and/or to an output peripheral semiconductor optical amplifier, wherein the structure of the active waveguide of at least one peripheral amplifier is so designed that it has a ratio of active area to confinement factor greater than that of the active waveguide of said first amplifier.

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Nepean, Canada

Christopher Janz