Photronics Corp.

International Business Machines Corporation

Place Exchange, Inc.

Christopher J Progler

Bryan S Kasprowicz

Christopher P Ausschnitt

Peter Rhyins

Alan Edward Rosenbluth

Timothy A Brunner

Michael Straight Hibbs

Daniel A Corliss

Scott Josef Bukofsky

Joseph P Kirk

Nakgeuon Seong

Ronald L Gordon

Edward J Suttile

Young Ham

Brian Dillon

Mohamed Ramadan

Michael Green

A pellicle assembly for large-size photomasks including a frame member configured to be affixed to a large-size photomask substrate, a substantially rigid and transparent pellicle membrane affixed to the frame member so as to protect at least a portion of the large-size photomask substrate from contamination during usage, storage and/or transport, and a coating on at least one of top and bottom surfaces of the pellicle membrane that binds the pellicle membrane to prevent separation of pellicle membrane material in the event of breakage.

Pellicle for flat panel display photomask

Methods and systems for building a photomask from obtained pattern information relating to a photomask that exhibits defects on wafer. Spatial domain analysis is conducted on the pattern information so that corrective photomask structures can be generated and applied to a photomask layout. A photomask is built using the corrective photomask structures. The photomask is verified for effectiveness.

System, method, and program product for manufacturing a photomask

A microfluidic panel including at least one substrate, one or more channels formed in the substrate, and fluid disposed within the one or more channels. The fluid is selected to store thermal energy and the microfluidic panel is adapted to convert the thermal energy into useable energy or condition the energy to adjust optical wavelength passband of the panel.

Microfluidic thermoptic energy processor

A photomask used for manufacturing a semiconductor device includes a substrate; and one or more layers disposed over the substrate, the one or more layers defining a full field area and a reduced field area with a primary pattern being formed in the reduced field area, wherein the full field area is defined by a width of at least 90 mm and a length of at least 100 mm, and the reduced field area is defined by a width within the range of approximately 20-80 mm and a length within the range of approximately 20-80 mm.

Photomask having a reduced field size and method of using the same

A photomask used for manufacturing a semiconductor device includes a substrate; and one or more layers disposed over the substrate, the one or more layers defining a full field area and a reduced field area with a primary pattern being formed in the reduced field area, wherein the full field area is defined by a width of at least 90 mm and a length of at least 100 mm, and the reduced field area is defined by a width within the range of approximately 20-80 mm and a length within the range of approximately 20-80 mm, a center point of the primary patterned area being spaced a predetermined distance from a center point of the photomask so that the primary patterned area avoids photomask defects.

An integrated circuit including a substrate; a circuit pattern formed over the substrate; and one or more fences formed around edges of the circuit pattern, each of the one or more fences having a determined electrical resistance which is used to detect the addition of malicious circuitry. Each fence has a determined electrical resistance which is used to monitor the validity of the fence.

Security element for an integrated circuit, integrated circuit including the same, and method for securing an integrated circuit

A photomask for integrated circuit production for development of integrated circuit components, where the integrated circuit production uses a radiation source that generates a source image, includes a substrate with one or more layers disposed thereon; a source separator element that separates the source image into one or more duplicate source images; one or more polarizing elements each corresponding to one of the one or more duplicate source images; and one or more sensors each corresponding to one of the one or more polarizing elements, the one or more sensors sensing one or more radiation characteristics of the radiation source.

Photomask with detector for optimizing an integrated circuit production process and method of manufacturing an integrated circuit using the same

A photomask for integrated circuit production comprising a substrate, one or more layers and a detector for monitoring a process parameter of the integrated circuit production in combination with one or more of the following: communication circuitry for communicating with external equipment for the integrated circuit production, a computational processor for analyzing the monitored process parameter, and a data storage component. In addition, a method of integrated circuit production comprising the steps of providing a photomask in the integrated circuit production process and monitoring a process parameter of the integrated circuit production using the photomask, in combination with one or more following steps: analyzing the monitored process parameter using the photomask; communicating the monitored process parameter from the photomask to external equipment involved in the integrated circuit production; and storing the monitored process parameter in the photomask. For example, the photomask embodying aspects of the present invention may monitor and track the process parameter of a stepper during the integrated circuit production. The monitored data may be analyzed against the production information to determine possible adjustment or alteration to the integrated circuit production steps.

A secure photomask including a substrate having one or more pattern layers formed thereon and a blocking aperture disposed below the one or more pattern layers that prevents at least one of unauthorized use and copying of the photomask.

Secure photomask with blocking aperture

The present invention generally relates to improved binary half tone ('BHT') photomasks and microscopic three-dimensional structures (e.g., MEMS, micro-optics, photonics, micro-structures and other three-dimensional, microscopic devices) made from such BHT photomasks. More particularly, the present invention provides a method for designing a BHT photomask layout, transferring the layout to a BHT photomask and fabricating three-dimensional microscopic structures using the BHT photomask designed by the method of the present invention. In this regard, the method of designing a BHT photomask layout comprises the steps of generating at least two pixels, dividing each of the pixels into sub-pixels having a variable length in a first axis and fixed length in a second axis, and arraying the pixels to form a pattern for transmitting light through the pixels so as to form a continuous tone, aerial light image. The sub-pixels' area should be smaller than the minimum resolution of an optical system of an exposure tool with which the binary half tone photomask is intended to be used. By using this method, it is possible to design a BHT photomask to have continuous gray levels such that the change in light intensity between each gray level is both finite and linear. As a result, when this BHT photomask is used to make a three-dimensional microscopic structure, it is possible to produce a smoother and more linear profile on the object being made.

Growing community of inventors

Hopewell Junction, NY, United States of America

Christopher J Progler