Intel Corporation

Intel Corportion

Christopher J Nelson

Feras Eid

Omkar G Karhade

Nitin A Deshpande

Shawna M Liff

Ravindranath Vithal Mahajan

Johanna M Swan

Sasha N Oster

Kemal Aygun

John Stephen Guzek

Islam A Salama

Pete D Vogt

William J Lambert

David Zimmerman

Lakshminarayana Pappu

Tak Ming Mak

Charles A Gealer

Tyler N Osborn

Bharani Thiruvengadam

John C Johnson

Kalyan C Kolluru

James Edward Neeb

Uddalak Bhattacharya

Timothy J Callahan

Baruch Schnarch

Stephen Sturges

Bradly L Inman

Derek B Feltham

Donald E Edenfeld

Shelby G Rollins

Sundar V Pathy

Danka Goldin Schwabova

Hiren V Tilala

Amande B Trang

Matthew Hendricks

Jared Pager

David J Zimmerman

Embodiments herein relate to apparatus, systems, and methods to compress a test pattern onto a field programmable gate array to test a device under test. This may include identifying values of a plurality of drive pins for a plurality of test cycles to apply to an input of the DUT for each of the plurality of test cycles, identifying values of a plurality of compare pins for the plurality of test cycles to compare an output of the DUT, respectively, for each of the plurality of test cycles, analyzing the identified values, compressing, based on the analysis, the values of the plurality of drive pins and the plurality of compare pins, and storing the compressed values on the FPGA.

Compressed test patterns for a field programmable gate array

Systems, methods, and apparatuses for implementing die recovery in Two-Level Memory (2LM) stacked die subsystems are described. A stacked semiconductor package includes a processor functional silicon die at a first layer of the stacked semiconductor package; one or more memory dies forming a corresponding one or more memory layers of the stacked semiconductor package; a plurality of Through Silicon Vias (TSV s) formed through the one or more memory dies; a plurality of physical memory interfaces electrically interfacing the one or more memory dies to the processor functional silicon die at the first layer through the memory layers via the plurality of TSVs; and a redundant physical memory interface formed by a redundant TSV traversing through the memory layers to the processor functional silicon die at the first layer through which to reroute a memory signal path from a defective physical memory interface at a defective TSV to a functional signal path traversing the redundant TSV.

Systems, methods, and apparatuses for implementing die recovery in two-level memory (2LM) stacked die subsystems

Embodiments of the present disclosure are directed towards an integrated circuit (IC) package having first and second dies with first and second input/output (I/O) interconnect structures, respectively. The IC package may include a bridge having first and second electrical routing features coupled to a portion of the first and second I/O interconnect structures, respectively. In embodiments, the first and second electrical routing features may be disposed on one side of the bridge; and third electrical routing features may be disposed on an opposite side. The first and second electrical routing features may be configured to route electrical signals between the first die and the second die and the third electrical routing features may be configured to route electrical signals between the one side and the opposite side. The first die, the second die, and the bridge may be embedded in electrically insulating material. Other embodiments may be described and/or claimed.

Integrated circuit package with embedded bridge

A stacked semiconductor package comprising a functional silicon die having embedded thereupon a Wide Input/Output 2 (WIO2) interface, and two or more memory dies forming a corresponding two or more memory layers of the stacked semiconductor package. A plurality of Through Silicon Vias (TSVs) are formed through the two or more memory dies, wherein each of the plurality of TSVs traverse through the two or more memory layers to the functional silicon die via the WIO2 interface of the functional silicon die. A test port interface receives test signals from an external tester and routes the test signals through a steering logic communicably interfaced with the two or more memory dies. The steering logic shifts data into and out of the two or more memory dies through the plurality of TSVs.

Stacked semiconductor package having fault detection and a method for identifying a fault in a stacked package

A microelectronic package of the present description may comprises a first microelectronic device having at least one row of connection structures electrically connected thereto and a second microelectronic device having at least one row of connection structures electrically connected thereto, wherein the connection structures within the at least one first microelectronic device row are aligned with corresponding connection structures within the at least one second microelectronic device row in an x-direction. An interconnect comprising an interconnect substrate having a plurality of electrically isolated conductive traces extending in the x-direction on a first surface of the interconnect substrate may be attached to the at least one first microelectronic device connection structure row and the at least one second microelectronic device connection structure row, such that at least one interconnect conductive trace forms a connection between a first microelectronic device connection structure and its corresponding second microelectronic device connection structure.

High density interconnection of microelectronic devices

Testing I/O (input/output) eye width for an interface with an inverted modulated strobe or clock signal. An I/O interface includes multiple signal lines, each with a hardware I/O buffer with timing characteristics. A system generates a strobe signal with a triggering edge that triggers a write, and a trailing edge that is modulated by adjusting the duty cycle of the strobe signal. The system inverts the modulated strobe signal to generate an inverted strobe signal, wherein the inverted strobe signal has a modulated triggering edge generated from inverting the modulated trailing edge. The device under test writes test data based on the triggering edge of the original strobe signal and reads test data based on the triggering edge of the inverted strobe signal.

Duty cycle based timing margining for I/O AC timing

Indirect testing of multiple I/O interface signal lines concurrently. A system distributes a test data sequence to a group of signal lines. Each signal line receives the test data sequence and checks for errors in receiving the test data sequence at an associated I/O buffer. The system includes an error detection mechanism for each signal line. The system also includes an error detection mechanism for the group of multiple signal lines. If the I/O buffer receives any bit of the test data sequence incorrectly, the signal line error detection indicates an error. The group error detection accumulates pass/fail information for all signal lines in the group. Rather than sending a pass/fail indication on every cycle of the test, the group error detection can count pass/fail information for all signal lines of the group for all bits of the test data sequence and indicate error results after the entire test data is received.

Testing I/O timing defects for high pin count, non-contact interfaces

I/O delay testing for devices utilizing on-chip delay generation. An embodiment of an apparatus includes I/O buffer circuits, at least one of the buffer circuits including a transmitter and a receiver that are coupled for loop-back testing of the buffer circuit; and testing circuitry for the loop-back testing for the at least one buffer circuit, the loop-back testing including determining whether test data transmitted by the transmitter of the buffer circuit matches test data received by the respective coupled receiver. The testing circuitry includes a delay line to provide delay values from a transmit clock signal for the testing of the at least one buffer circuit, a counter to provide a count to choose one of the plurality of delay values, and test logic for the loop-back testing.

Input/output delay testing for devices utilizing on-chip delay generation

Techniques and mechanisms for evaluating I/O buffer circuits. In an embodiment, test rounds are performed for a device including the I/O buffer circuits, each of the test rounds comprising a respective loop-back test for each of the I/O buffer circuits. Each of the test rounds corresponds to a different respective delay between a transmit clock signal and a receive clock signal. In another embodiment, a first test round indicates a failure condition for at least one I/O buffer circuit and a second test round indicates the failure condition for each of the I/O buffer circuits. Evaluation of the I/O buffer circuits determines whether the device satisfies a test condition, where the determining is based on a difference between the delay corresponding to the first test round and the delay corresponding to the second test round.

Method, system and apparatus for evaluation of input/output buffer circuitry

A tester for testing a digital device. The tester includes a plurality of time measurement units to measure transition timing values of output data of each output pin of the digital device in each test cycle. A plurality of result operations units performs real-time arithmetic operations on the measured transition timing values to produce a pass/fail result and additional test results. A plurality of result accumulators stores the pass/fail result and a number of selected test results. And a capture/analysis engine captures and analyzes the pass/fail result and the selected results to provide comprehensive test performance of the digital device.

High speed VLSI digital tester architecture for real-time output timing acquisition, results accumulation, and analysis

An output-relative signal receiver to test an integrated circuit that provides an output-relative data signal. The output-relative signal receiver receives the output-relative data signal and a corresponding output strobe signal from an integrated circuit device and produces a test strobe signal derived from the output strobe signal. The test strobe signal is used to test a feature of the integrated circuit device indicated by the output-relative data signal.

Method and apparatus for testing an integrated circuit having an output-to-output relative signal

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Gilbert, AZ, United States of America

Christopher J Nelson