Rudolph Technologies, Inc.

Veeco Instruments Inc.

Brown University

Christopher J Morath

Robin Mair

Robert Gregory Wolf

Michael Kotelyanskii

Ajit P Paranjpe

George Andrew Antonelli

Humphrey J Maris

Robert J Stoner

Leo A Chin

Guray Tas

Sean P Leary

Arindam Sinharoy

Michael Colgan

Guenadiy Lazarov

Raymond C Logue

Jamie I Ludke

Chi-Jung Cheng

Andrey Vertikov

Tong Zheng

Andre D Miller

Jamie L Ludke

Transfer methods disclosed herein include transferring micro-LEDs from a first carrier to a second carrier. The methods include bonding the micro-LEDs to the first carrier using a first releasable bonding layer that releases when exposed to actinic light. The micro-LEDs are then secured to a second carrier. The first bonding layer is then irradiated through the first releasable bonding layer through the first carrier with the actinic light to release the micro-LEDs from the first carrier. The second carrier can be a display backplane having bonding pads and the micro-LEDs can be secured to the bonding pads.

Micro-LED transfer methods using light-based debonding

A chemical vapor deposition or atomic layer deposition system includes a gas concentration sensor for determining the quantity of precursor gases admitted thereto. The gas concentration sensor can include a transmitter and a receiver for transmitting an acoustic signal across a chamber. In embodiments, the transmitter and receiver are designed to increase transmitted signal while reducing transmitted noise, facilitating use of the gas concentration sensor at low pressure and high temperature.

Gas concentration sensors and systems

A system for imposing and analyzing surface acoustic waves in a substrate to determine characteristics of the substrate is disclosed. Optical elements and arrangements for imposing and analyzing surface acoustic waves in a substrate are also disclosed. NSOM's, gratings, and nanolight elements may be used to impose surface acoustic waves in a substrate and may also be used to measure transient changes in the substrate due to the passage of surface acoustic waves therethrough.

Substrate analysis using surface acoustic wave metrology

An optical system includes both a microspot broadband spectroscopic ellipsometer and a photoacoustic film thickness measurement system that are supplied laser light by the same laser light source. One of the systems makes a measurement, the result of which is used to adjust a parameter of the other system; e.g. the ellipsometer measures thickness and the photoacoustic system uses the thickness result to measure the speed of sound. In one version, the ellipsometer converts the laser beam to a broad-spectrum beam that provides higher intensity.

Metrology system with spectroscopic ellipsometer and photoacoustic measurements

A photoacoustic system with ellipsometer, where the ellipsometer includes a laser light source for generating an incident beam, an element for focusing the incident beam on a sample, a unit for measuring the change in amplitude of the incident beam on reflection and a unit for measuring the phase difference of the incident beam on reflection. The system further includes an element to convert an input narrow spectrum beam generated by the laser light source to a broadband sample measurement beam that is focused onto the sample.

An apparatus for improving the signal to noise ratio of measurements of the thickness of layers in a thin film stack uses a photoacoustic measurement system that includes a time differentiation system for inducing a delay in pump beam pulses. The time differentiation system uses, among other things, a birefringent element and other elements to control the polarization of pump beam pulses. Use of the apparatus involves applying a time varying voltage to an electro-optic modulator driver and setting a time differentiation step; or, in another embodiment, applying a time varying voltage to an electro-optic modulator to induce a fixed time delay delta-t between a vertically polarized pulse and a horizontally polarized pulse. The high frequency operation of the system provides for improved determinations of film thickness.

Method and apparatus for increasing signal to noise ratio in a photoacoustic film thickness measurement system

An optical metrology system is provided with a data analysis method to determine the elastic moduli of optically transparent dielectric films such as silicon dioxide, other carbon doped oxides over metal or semiconductor substrates. An index of refraction is measured by an ellipsometer and a wavelength of a laser beam is measured using a laser spectrometer. The angle of refraction is determined by directing a light pulse focused onto a wafer surface, measuring a first set of x, y, and zcoordinates, moving the wafer in the z direction, directing the light pulse onto the wafer surface and measuring a second set of x, yand zcoordinates, using the coordinates to calculate an angle of incidence, calculating an angle of refraction from the calculated angle of incidence, obtaining a sound velocity v, from the calculated angle of refraction and using the determined sound velocity v, to calculate a bulk modulus. Hardware calibration and adjustments for the optical metrology system are also provided in order to minimize the variation of the results from tool to tool down to about 0.5% or below.

Measuring elastic moduli of dielectric thin films using an optical metrology system

Disclosed are methods and apparatus for reducing thermal loading of a film disposed on a surface of a sample, such as a semiconductor wafer, while obtaining a measurement of a thickness of the film in an area about a measurement site. The method includes steps of (a) bringing an optical assembly of the measurement system into focus; (b) aligning a beam spot with the measurement site; (c) turning on one of a dither EOM or a dither AOM or a piezo-electric dither assembly to sweep the beam spot in an area about the measurement site, thereby reducing the thermal loading within the measurement site; (d) making a measurement by obtaining a signal representing an average for the film under the area; (e) recording the measurement data; and (f) analyzing the measurement data to determine an average film thickness in the measurement area.

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Basking Ridge, NJ, United States of America

Christopher J Morath