Raytheon Company

Other

Christopher J MacDonald

Adrian D Williams

Kamal Tabatabaie Alavi

Kezia Cheng

Kamal Tabatabaie-Alavi

Kenneth A Wilson

Fikret Altunkilic

Paul J Duval

Kiuchul Hwang

Paul M Ryan

A Field Effect Transistor (FET) having a source, drain, and gate disposed laterally along a surface of a semiconductor and a field plate structure: having one end connected to the source; and having a second end disposed between the gate and the drain and separated from the drain by a gap. A dielectric structure is disposed over the semiconductor, having: a first portion disposed under the second end of the field plate structure; and, a second, thinner portion under the gap.

Transistor having low capacitance field plate structure

Apparatus and method for heating a wafer having semiconductor material. The apparatus includes: a chamber, a source of radiant heat; a source of gas; and a susceptor disposed in the chamber to receive and absorb heat radiated by the source of radiant heat; the susceptor having an opening therein to allow a flow of gas to pass from the source of gas to pass through an interior region of the susceptor and over the wafer.

Rapid thermal anneal apparatus and method

A stack of layers providing an ohmic contact with the semiconductor, a lower metal layer of the stack is disposed in direct contact with the semiconductor; and a radiation absorption control layer disposed over the lower layer for controlling an amount of the radiant energy to be absorbed in the radiation absorption control layer during exposure of the stack to the radiation during a process used to alloy the stack with the semiconductor to form the ohmic contact.

Method for controlling the amount of radiation having a predetermined wavelength to be absorbed by a structure disposed on a semiconductor

A Schottky contact structure for a semiconductor device having a Schottky contact and an electrode for the contact structure disposed on the contact. The Schottky contact comprises: a first layer of a first metal in Schottky contact with a semiconductor; a second layer of a second metal on the first layer; a third layer of the first metal on the second layer; and a fourth layer of the second metal on the third layer. The electrode for the Schottky contact structure disposed on the Schottky contact comprises a third metal, the second metal providing a barrier against migration between the third metal and the first metal.

Schottky contact structure for semiconductor devices and method for forming such Schottky contact structure

Schottky contact structure for semiconductor devices and method for forming such schottky contact structure

A method and structure, the structure having a substrate, an active device in an active device semiconductor region; of the substrate, a microwave transmission line, on the substrate, electrically connected to the active device, and microwave energy absorbing 'dummy' fill elements on the substrate. The method includes providing a structure having a substrate, an active device region on a surface of the structure, an ohmic contact material on the active device region, and a plurality of 'dummy' fill elements on the surface to provide uniform heating of the substrate during a rapid thermal anneal process, the ohmic contact material and the &#x201c;dummy&#x201d; fill elements having the same radiant energy reflectivity. The rapid thermal anneal processing forms an ohmic contact between an ohmic contact material and the active device region and simultaneously converts the &#x201c;dummy&#x201d; fill elements into microwave lossy &#x201c;dummy&#x201d; fill elements.

Monolithic microwave integrated circuit (MMIC) and method for forming such MMIC having rapid thermal annealing compensation elements

A semiconductor structure having a substrate; an active device formed in an active semiconductor region of the substrate, the active device having a control electrode for controlling a flow of carriers through the active semiconductor region between a pair of electrical contacts; and a photolithographic, thickness non-uniformity, compensation feature, disposed on the surface substrate off of the active semiconductor region. In one embodiment the feature comprises pads on the surface of the substrate and off of the active semiconductor region.

Photolithographic, thickness non-uniformity, compensation features for optical photolithographic semiconductor structure formation

An improved golf training system and method of using the system is provided. The golf training system may also be used as a new game. The system includes a golf club having an enlarged hitting surface and shorter shaft, and a tee that comes in variable extended lengths. By gradually and incrementally lowering the length of the tee and extending the length of the club, a player is able to learn proper swing mechanics.

Growing community of inventors

Medford, MA, United States of America

Christopher J MacDonald