Semiconductor Components Industries, LLC

Christopher J Gass

Paul Jay Harriman

Benjamin M Rice

Michael A Stapleton

Ole P Moyer

Jefferson W Hall

Jeffrey Pearse

Misbahul Azam

W David Pace

A method for mitigating aliasing effects in a single phase power converter and mitigating aliasing effects and inhibiting thermal run-away in a multi-phase power converter at varying load transition rates. A single phase or multi-phase power converter having an on-time is provided and the frequency of the power converter is adjusted so that a load step period and the on time of the single phase power converter are in a temporal relationship. Alternatively, a load step rate is inhibited from locking onto a phase current of the single phase power converter by suspending an oscillator signal. In accordance with another alternative, a load step rate is inhibited from locking onto a phase current of the single phase power converter by suspending an oscillator signal and dithering an input signal to the oscillator.

Method for inhibiting thermal run-away

A method for method for inhibiting thermal run-away in a multi-phase power converter at varying load transition rates. A multi-phase power converter having an on-time is provided and the frequency of the multi-phase power converter is adjusted so that a load step period and the on time of the multi-phase power converter are in a temporal relationship. Alternatively, a load step rate is inhibited from locking onto a phase current of the multi-phase power converter by suspending an oscillator signal. In accordance with another alternative, a load step rate is inhibited from locking onto a phase current of the multi-phase power converter by suspending an oscillator signal and dithering an input signal to the oscillator.

A masking material ( ) is formed on a foundation layer ( ) and a substrate ( ). A mask ( ) is disposed onto the masking material ( ) where a trench ( ) is desired to be formed. An etch step removes all of the masking material ( ) except at regions where the mask ( ) was formed leaving a protruding portion ( ) with an opening ( ) on either side. An epi layer ( ), is grown on the foundation layer ( ) adjacent to the protruding portion ( ) in the opening ( ). A wet oxide etch process is used to remove the protruding portion ( ) leaving a trench ( ) formed in the epi layer ( ). To complete the process, a silicon wet etch process is used to round off the corners at an edge ( ) of the trench ( ).

Trench growth techniques using selective epitaxy

A switching power supply (,) receives an AC voltage and converts it to a regulated DC voltage. The switching power supply (,) includes a Vcc limiter (,) to limit the operating voltage at the power supply terminal (,) of a integrated regulator circuit (,). The Vcc limiter (,) limits the operating voltage at the power supply terminal (,). When operating voltage at power supply terminal (,) increases, a differential pair of transistors (,) supply a differential current to a current mirror configuration of transistors (,) to supply voltage to a drive transistor (,) to increase current in the drive transistor (,) to a value based on n times the current in a reference transistor (,). An increase in current through the drive transistor (,) counteracts increased operating voltage at the power supply terminal (,), thereby reducing the operating voltage level back to a desired level.

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Tempe, AZ, United States of America

Christopher J Gass