Advanced Micro Devices Corporation

Spansion LLC.

Christopher Hans Lansford

Jeremy Sam Lansford

Daniel E Sutton

Qinghua He

Bradley J Yellitz

An integrated circuit wafer system includes an integrated circuit wafer, measuring thicknesses of the integrated circuit wafer, calculating a change in temperature ramp rates and thickness offsets for subsequent processing based on the temperature ramp rates for prior processing and the resultant thicknesses, and calculating an average temperature and deposition time for subsequent processing based on calculated changes in temperature ramp rates, coupled with the average temperature, deposition time for prior processing, and the resultant thicknesses.

Integrated circuit wafer system with control strategy

Various embodiments of a planarization device and methods of using the same are provided. In one aspect, a device for planarizing a surface of a semiconductor workpiece is provided that includes a table for holding a quantity of an electrically conducting solution thereon. A member is included for holding the semiconductor workpiece such that the surface is in contact with the solution and operates as a working electrode. The member has a first conductor for establishing electrical connection with the semiconductor workpiece. A counter electrode is provided for making electrical connection with the solution and a reference electrode is provided for making electrical connection with the solution with a known electrode potential. A power source is operable to control the electric potential between the working electrode and the counter electrode. Slurry consumption may be dramatically reduced and static etch rate due to aborts may be virtually eliminated.

Chemical mechanical polishing with electrochemical control

Various methods and apparatus for polishing semiconductor workpieces using electrochemically generated species are disclosed. In one aspect, a method of processing is provided that includes contacting a semiconductor workpiece to a solution, electrochemically generating a chemical species in the solution, and polishing the semiconductor workpiece with the aid of the solution.

Electrochemically generated reactants for chemical mechanical planarization

A method is provided, the method comprising planarizing a dielectric layer disposed above a structure layer, exciting surface plasmons in a conductive film disposed in the dielectric layer and detecting photons reflected from the conductive film to determine a change in a surface plasmon resonant angle. The method also comprises determining a thickness of the dielectric layer from the change in the surface plasmon resonant angle.

Surface plasmon resonance-based endpoint detection for chemical mechanical planarization (CMP)

Various methods of inspecting a semiconductor workpiece for defects are provided. In one aspect, a method of inspecting a surface of a semiconductor workpiece for defects is provided that includes applying a negative-tone photoresist film to the surface and baking the negative-tone photoresist film to release solvent therefrom and to facilitate release of catalyzing substances held by the defects into the negative-tone photoresist film. The catalyzing substances react chemically with at least one moiety of the photoresist film to thereby lower the solubility of one or more portions of the negative-tone photoresist film in a developer. The negative-tone photoresist film is developed with the developer and the surface is inspected for the portions of the negative-tone photoresist film remaining after the developing process. The remaining portions of the negative-tone photoresist film are indicative of the locations of the defects.

Method of detecting film defects using chemical exposure of photoresist films

Various embodiments of an ion implantation apparatus are provided. In one aspect, an apparatus for implanting a workpiece with ions is provided that includes a housing enclosing a first chamber. A source of accelerated ions is provided for directing a beam of ions through the first chamber toward the workpiece. A second chamber is provided for holding the workpiece along with a plurality of longitudinally spaced chambers that are defined by the housing and a plurality of longitudinally spaced bulkheads. Each of the bulkheads has an aperture enabling fluid communication between the plurality of longitudinally spaced chambers and the passage of the beam of ions. A source of gas is coupled to the second chamber. A pumping system is provided for evacuating the first chamber, the second chamber and the plurality of longitudinally spaced chambers. The pumping system and the plurality of longitudinally spaced chambers provide an increase in pressure between the first chamber and the second chamber. The higher pressure level in the second chamber enables the gas to be present in the second chamber in sufficient quantities to impact the workpiece and neutralize charge building thereon. Charge buildup during implantation is reduced.

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Austin, TX, United States of America

Christopher Hans Lansford