Axcelis Technologies, Inc.

Christopher Garmer

Ivan L Berry, Iii

Carlo Waldfried

Orlando Escorcia

Alan C Janos

Palani Sakthivel

Igor Goldman

Feliks B Kleyner

Ilya M Ayzman

Ilya Ayzman

Feliks Kleyner

Apparatuses and processes for treating dielectric materials such as low k dielectric materials, premetal dielectric materials, barrier layers, and the like, generally comprise a radiation source module, a process chamber module coupled to the radiation source module; and a loadlock chamber module in operative communication with the process chamber and a wafer handler. The atmosphere of each one of the modules can be controlled as may be desired for different types of dielectric materials. The radiation source module includes a reflector, an ultraviolet radiation source, and a plate transmissive to the wavelengths of about 150 nm to about 300 nm, to define a sealed interior region, wherein the sealed interior region is in fluid communication with a fluid source.

Apparatus and process for treating dielectric materials

A radiant source for heating a workpiece such as a semiconductor wafer includes a plurality of radiant heating elements, arranged in an array that is generally concentric about a source center axis. A reflector has a reflecting surface that bounds a cavity or channel that contains the heating elements, the reflector comprising walls that extend around the center axis and that are finished for reflecting radiant energy emitted by the heating elements to a region occupied by a wafer. The channel reflecting surfaces comprise at least a part of a plane and/or cylinder and/or a cone and/or a convex to the heating elements curved surface of revolution bordering or spanning two or more adjacent heating elements.

Radiant heating source with reflective cavity spanning at least two heating elements

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Rockville, MD, United States of America

Christopher Garmer