Hoechst Celanese Corporation

Honeywell International Inc.

Alliedsignal Inc.

Christopher E Osuch

Michael J McFarland

Richard A Olzak

Jane Ren

James T Yardley

Chengjiu Wu

Frederick R Hopf

Anne M Mooring

Amanda L Plyley

The present invention provides methods for heat absorption and thermally protected enclosures for containing heat sensitive devices, which include a heat absorption composition including polyoxymethylene polymer.

Method for heat absorption using polyoxymethylene polymer compositions

The present invention provides methods and compositions useful for heat absorption and dissipation, which include between about 10 percent and about 99 percent by weight of a bicarbonate compound and between about 90 percent and about 1 percent by weight of binder, and thermally protected enclosures including the same.

Enclosure for dissipating heat away from a heat sensitive device using

Methods for heat absorption and heat dissipation, by enclosing a heat sensitive device with between about 10 percent and about 99 percent by weight of a bicarbonate compound. The bicarbonate compound is optionally combined with between about 90 percent and about 1 percent by weight of binder.

Method for dissipating heat away from a heat sensitive device using

A new monomer is used to prepare homo or copolymers containing blocked imide groups which are characterized by deblocking in two stages, first when acid catalyzed and thereafter in aqueous alkaline solutions. Such polymers are, therefore, especially useful in formulating positive photoresist compositions. The polymers are combined with a latent photoacid, which when exposed to actinic radiation removes the acid sensitive blocking moiety, preferably an acetal or ketal group, leaving a methylol group or substituted methylol group remaining attached to the nitrogen atom, which groups are subsequently removed by exposure to aqueous alkaline developing solutions, leaving only imide groups. ##STR1## The new monomer is a derivative of maleimide in which the imide hydrogen has been replaced with a methylol group, which is subsequently reacted to form an acetal or ketal. Preferred monomers include N-(2,4-dioxa-3,3-dimethylpentyl)-2H,5H-2,5-dioxopyrrole and related compounds.

Blocked monomer and polymers therefrom for use as photoresists

A new monomer is used to prepare homo or copolymers containing blocked imide groups which are characterized by deblocking in two stages, first when acid catalyzed and thereafter in aqueous alkaline solutions. Such polymers are, therefore, especially useful in formulating positive photoresist compositions. The polymers are combined with a latent photoacid, which when exposed to actinic radiation removes the acid sensitive blocking moiety, preferably an acetal or ketal group, leaving a methylol group or substituted methylol group remaining attached to the nitrogen atom, which groups are subsequently removed by exposure to aqueous alkaline developing solutions, leaving only imide groups, ##STR1## The new monomer is a derivative of maleimide in which the imide hydrogen has been replaced with a methylol group. which is subsequently reacted to form an acetal or ketal. Preferred monomers include N-(2,4-dioxa-3,3-dimethylpentyl)-2H,5H-2,5-dioxopyrrole and related compounds.

Actinic (deep ultraviolet, ultraviolet and visible) light sensitive positive photoresist compositions containing a mixture of an alkali-insoluble photoactive compound capable of being transformed into an alkali-soluble species upon exposure to actinic radiation, in an amount sufficient to render the mixture relatively alkali insoluble and a polymer comprising an amount of CO--NH--CO groups, such as maleimide and especially maleimide--substituted styrene copolymers, sufficient to render the mixture readily alkali soluble upon exposure to actinic radiation are disclosed. The preferred copolymers include maleimide/styrene or .alpha.-methylstyrene in a 1:1 molar ratio. The preferred methylstyrene in a 1:1 molar ratio. The preferred photoactive compound suitable for a positive photoresist composition responsive to deep UV actinic radiation has the formula 18-B in Table I. The present invention also comtemplates photosensitive elements and thermally stable phtochemically imaged systems based on the actinic light sensitive positive photoresist compositions. The positive photoresist compositions are coated onto a substrate to produce a photosensitive element, which upon exposure to a pattern of actinic radiation of wavelength in the range of about 200-700 nm produces a photochemically imaged system that can be treated with an alkaline developer to form highly resolved patterns, by highly selective removal of exposed areas. After development, preferred embodiments of the photo-chemically images systems exhibit insignificant changes in the highly resolved features (one micron) in the patterned image upon postbaking at temperatures of about 230.degree. C. and is, thereafter readily stripped. The high thermal stability exhibited by the photochemically imaged systems formed from the positive photoresist compositions of the present invention allows faster processing at higher temperatures, on equipment like plasma etchers and ion implanters; the developed photochemically imaged systems of the present invention retain high resolution, i.e., retain sharp, steep patterned image profiles.

Photochemical image process of positive photoresist element with

Photoresist compositions suitable for deep UV and excimer laser lithography are disclosed that are mixtures of a photoacid and a polymer having imide residues to which acid labile groups are attached. These compositions provide high resolution, high contrast and high sensitivity in the deep UV (wavelength of 250-300 nm), mid-UV (wavelength of 300-350 nm) or conventional (wavelength of 350-450 nm) exposure bands. The compositions are also suitable for exposure at wavelengths commonly associated with excimer laser sources (248, 308 nm) or for exposure by X-radiation. In the compositions disclosed, the imide group ##STR1## can be blocked with certain groups, X, to form compounds containing the structure ##STR2## which have solubility properties different from the unblocked imide. These groups, X, can be cleaved by acid under the proper conditions to regenerate the unblocked imide. Also, where the imide group is incorporated in a polymer, the polymer with blocked imide groups can be made to function as a resist when compounded with a substance capable of forming an acid upon exposure to radiation. The exact nature of the imide containing polymer is not critical, providing that: (1) in the unblocked state, the polymer is completely soluble in aqueous alkali; (2) in the blocked state, it is insoluble in the same aqueous solution, while simultaneously; (3) in the blocked state, it is soluble in a solvent capable of dissolving a suitable sensitizer; and (4) it is film forming. Other secondary properties may be selected (to enhance the characteristics of the resist) by varying the structure of the imide or a comonomer.

High resolution photoresist of imide containing polymers

A new monomer is used to prepare homo or copolymers containing blocked imide groups which are characterized by deblocking in two stages, first when acid catalyzed and thereafter in aqueous alkaline solutions. Such polymers are, therefore, especially useful in formulating positive photoresist compositions. The polymers are combined with a latent photoacid, which when exposed to actinic radiation removes the acid sensitive blocking moiety, preferably an acetal or ketal group, leaving a methylol group or substituted methylol group remaining attached to the nitrogen atom, which groups are subsequently removed by exposure to aqueous alkaline developing solutions, leaving only imide groups, ##STR1## The new monomer is a derivative of maleimide in which the imide hydrogen has been replaced with a methylol group, which is subsequently reacted to form an acetal or ketal. Preferred monomers include N-(2,4-dioxa-3,3-dimethylpentyl)-2H,5H-2,5-dioxopyrrole and related compounds.

Photoresist compositions suitable for deep UV and excimer laser lithography are disclosed that are mixtures of a photoacid and a polymer having imide residues to which acid labile groups are attached. The imide group ##STR1## can be blocked with certain groups, X, to form compounds containing the structure ##STR2## which have solubility properties different from the unblocked imide. These groups, X, can be cleaved by acid under the proper conditions to regenerate the unblocked imide. Where the imide group is incorporated in a polymer, the polymer with blocked imide groups can be made to function as a resist when compounded with a substance capable of forming an acid upon exposure to radiation. Preferred polymers are those in which at least 80% of the imide groups are blocked. When less than 50% of the imide groups are blocked, performance in a photoresist becomes unacceptable. When the special T-shaped profile needed for the metal lift-off method is required, at least about 50% of the imide groups should be blocked but not more than about 75%.

High resolution photoresist based on imide containing polymers

Actinic (deep ultraviolet, ultraviolet and visible) light sensitive positive photoresist compositions containing a mixture of an alkali-insoluble photoactive compound capable of being transformed into an alkali-soluble species upon exposure to actinic radiation, in an amount sufficient to render the mixture relatively alkali insoluble and a polymer comprising an amount of --CO--NH--CO-- groups, such as maleimide and especially maleimide-substituted styrene copolymers, sufficient to render the mixture readily alkali soluble upon exposure to actinic radiation are disclosed. The preferred copolymers include maleimide/styrene or .alpha.-methylstyrene in a 1:1 molar ratio. The preferred photoactive compound suitable for a positive photoresist composition responsive to deep UV actinic radiation has the formula 18-B in Table I. The present invention also contemplates photosensitive elements and thermally stable photochemically imaged systems based on the actinic light sensitive positive photoresist compositions. The positive photoresist compositions are coated onto a substrate to produce a photosensitive element, which upon exposure to a pattern of actinic radiation of wavelength in the range of about 200-700 nm produces a photochemically imaged system that can be treated with an alkaline developer to form highly resolved patterns, by highly selective removal of exposed areas. After development, preferred embodiments of the photochemically images systems exhibit insignificant changes in the highly resolved features (one micron) in the patterned image upon postbaking at temperatures of about 230.degree. C. and is, thereafter readily stripped. The high thermal stability exhibited by the photochemically imaged systems formed from the positive photoresist compositions of the present invention allows faster processing at higher temperatures, on equipment like plasma etchers and ion implanters; the developed photochemically imaged systems of the present invention retain high resolution, i.e., retain sharp, steep patterned image profiles.

Positive photoresist thermally stable compositions and elements having

Photoresist compositions suitable for deep UV and excimer laser lithography are disclosed that are mixtures of a photoacid and a polymer having imide residues to which acid labile groups are attached. These compositions provide high resolution, high contrast and high sensitivity in the deep UV (wavelength of 250-300 nm), mid-UV (wavelength of 300-350 nm) or conventional (wavelength of 350-450 nm) exposure bands. The compositions are also suitable for exposure at wavelengths commonly associated with excimer laser sources (248, 308 nm) or for exposure by X-radiation. In the compositions disclosed, the imide group ##STR1## can be blocked with certain groups, X, to form compounds containing the structure ##STR2## which have solubility properties different from the unblocked imide. These groups, X, can be cleaved by acid under the proper conditions to regenerate the unblocked imide. Also, where the imide group is incorporated in a polymer, the polymer with blocked imide groups can be made to function as a resist when compounded with a substrate capable of forming an acid upon exposure to radiation. The exact nature of the imide containing polymer is not critical, providing that: (1) in the unblocked state, the polymer is completely soluble in aqueous alkali; (2) in the blocked state, it is insoluble in the same aqueous solution, while simultaneously; (3) in the blocked state, it is soluble in a solvent capable of dissolving a suitable sensitizer; and (4) it is film forming. Other secondary properties may be selected (to enhance the characteristics of the resist) by varying the structure of the imide or a comonomer.

A new monomer is used to prepare homo or copolymers containing blocked imide groups which are characterized by deblocking in two stages, first when acid catalyzed and thereafter in aqueous alkaline solutions. Such polymers are, therefore, especially useful in formulating positive photoresist cmpositions. The polymers are combined with a latent photoacid, which when exposed to actinic radiation removes the acid sensitive blocking moiety, preferably an acetal or ketal group, leaving a methylol group or substituted methylol group remaining attached to the nitrogen atom, which groups are subsequenctly removed by exposure to aqueous alkaline developing solutions, leaving only imide groups, ##STR1## The new monomer is a derivative of maleimide in which the imide hydrogen has been replaced with a methylol group, which is subsequently reacted to form an acetal or ketal. Preferred monomers include N-(2,4-dioxa-3,3-dimethylpentyl)-2H,5H-2,5-dioxopyrrole and related compounds.

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Mine Hill, NJ, United States of America

Christopher E Osuch