Trikon Technologies Limited

Trikon Equipments Limited

Trikon Holdings Limited

Electro-tech, Inc.

Aviza Europe Limited

Trikon Equipment Limited

Christopher David Dobson

Arthur John McGeown

John Macneil

Katherine Giles

Knut Beekmann

Antony Paul Wilby

Adrian Kiermasz

Keith Edward Buchanan

Mark Graeme Martin Harris

This invention relates to a method and apparatus for forming a film on the substrate. The method comprises supplying to the chamber in gaseous or vapor form a silicon containing organic compound and an oxidizing agent in the presence of a plasma to deposit a film on the substrate and setting the film such that carbon containing groups are retained therein. In particular embodiments the setting is achieved by exposing the film to Hplasma.

Method and apparatus for forming a film on a substrate

This invention relates to a method of heating an insulating layer, such as is found in semiconductor devices, in which a formation has been etched through a layer of resist comprising reactive etching the resist, inhibiting absorption of or removing water vapour and/or oxygen at the exposed surfaces of the etched formation and filling the formation with conductive metal in the absence of said water vapour and/or oxygen.

Method of treating an insulting layer

This invention relates to a method of heating an insulating layer, such as is found in semiconductor devices, in which a formation has been etched through a layer of resist comprising reactive etching the resist, inhibiting absorption of or removing water vapor and/or oxygen at the exposed surfaces of the etched formation and filling the formation with conductive metal in the absence of said water vapor and/or oxygen.

Method of treating an isulating layer

The invention relates to a process for filling a multiplicity of recesses ( ) formed in an exposed surface of a workpiece ( ), wherein the mouths of the recesses ( ) are closed by the deposition of a layer ( ) and the layer is subjected to elevated temperature and pressure to force material from the layer down into the recesses. In the particular embodiments described, the elevated temperature is achieved by supplying very short thermal pulses, for example, from a light source such as a laser or a halogen light and preferably this thermal pulse is applied after the elevated pressure has been achieved.

Method of filling a recess

A semiconductor wafer is treated in a chamber by introducing into the chamber a silicon-containing gas or vapor and hydrogen peroxide in vapor form. The silicon-containing gas or vapor is reacted with the hydrogen peroxide to form a short chain, inorganic fluid polymer on the wafer, which thus forms a generally planar layer.

Method of treating a semiconductor wafer in a chamber using hydrogen peroxide and silicon containing gas or vapor

To fill a hole or trench structure in an article, such as a semiconductor wafer, a layer is formed on the article. The layer extends over the structure so as to seal the mouth thereof. The layer may be deposited by sputtering, etc, or the layer may be deposited as a pre-formed foil. Then, the wafer and layer are subject to elevated pressure and elevated temperature such as to cause material of the layer to flow into the structure.

Foil for use in filing substrate recesses

This invention relates to methods of forming a barrier layer including depositing a layer of Titanium Nitride and subsequently nitriding the surface of that layer. In some embodiments the Titanium Nitride layer is exposed to Oxygen prior to the nitroding step.

Methods of forming a barrier layer

Method of removing surface oxides found on a titanium oxynitride layer using a nitrogen containing plasma

A chamber includes a door which opens to introduce a workpiece into the chamber and which closes to enclose the workpiece within the chamber. A workpiece support is located within said chamber and supports the workpiece such that a coated surface of the workpiece faces in a given direction. A liquid supply mechanism floods the chamber with a liquid to immerse the workpiece support. A pressure pulse supply mechanism applies a pulse of pressure to the liquid such that the pulse of pressure is transmitted through the liquid in a direction opposite the given direction. The pulse of pressure is incident via the liquid on the coated surface of the workpiece supported by the workpiece support.

Apparatus for applying pressure to a coated surface of a workpiece

A deposit layer is deposited on the exposed surface of a surface layer formed on a semiconductor wafer. The depositing of the deposit layer continues at least until the deposit layer extends over all the recesses to close completely the openings of all of the recesses to thereby form enclosed areas within the recesses which are devoid of a material of the deposit layer. After forming the enclosed areas within the recesses, the wafer and the deposit layer are then subjected to pressure and heat treatment sufficient to cause parts of the deposit layer to deform to fill the enclosed areas within the respective recesses.

Method for filling substrate recesses using pressure and heat treatment

Method of treating a semi-conductor wafer

forming a layer

To fill a hole or trench structure in an article, such as a semiconductor wafer, a layer is formed on the article. The layer extends over the structure so as to seal the mouth thereof. Then, the wafer and layer are subject to elevated pressure and elevated temperature such as to cause material of the layer to flow into the structure.

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Bristol, United Kingdom

Christopher David Dobson