Pear Labs LLC

Other

At+t Corp.

Diodes Fabtech, Inc.

Eon Labs, Inc.

Christopher Daniel Hruska

Walter Riley Buchanan

Roman Hamerski

David Forsee

Wayne A Smith

Timothy S Eastman

Todd M McGinn

Zerui Chen

James Man-Fai Hong

Johnny Duc Van Chiem

A plasma gate device comprises a plasma creation chamber, first through fourth dielectrics, and first through sixth electrodes. The plasma creation chamber is a space in which plasma is created from a first fluid and a second fluid. The first and second dielectrics form upper and lower boundaries on a first side of the plasma creation chamber. The third and fourth dielectrics form upper and lower boundaries on a second side of the plasma creation chamber. The first and second electrodes receive voltages to generate a first electric field which creates a first plasma on the first side of the plasma creation chamber. The third and fourth electrodes receive voltages to generate a second electric field which creates a second plasma on the second side of the plasma creation chamber. The fifth electrode extracts electrons from the first plasma. The sixth electrode injects electrons into the second plasma.

Non-thermal multiple plasma gate devices

A plasma gate device comprises a housing, a gas inlet, first and second dielectrics, and first, second, and third electrodes. The housing includes an internal reactor chamber. The gas inlet receives a source gas that flows to the reactor chamber. The first and second dielectrics are spaced apart from one another, with each dielectric including an upper surface and a lower surface. The two dielectrics are oriented such that the lower surface of the first dielectric faces the upper surface of the second dielectric. The first and second dielectrics form boundaries of the reactor chamber. The first electrode receives a first electric voltage. The second electrode receives a second electric voltage. The first and second electric voltages in combination generate an electric field in the reactor chamber through which the source gas flows creating a positive ion plasma and a cloud of electrons. The third electrode attracts the electrons.

Non-thermal plasma gate device

A hybrid pulse driver and method for generating a short, high-voltage pulse of electrical energy. The hybrid pulse driver combining a pulse transformer function and a flyback transformer function and comprising one or more core circuits, a switching circuit, and an output. Each core circuit including a transformer having a magnetic core, a single-turn primary winding, and a multi-turn secondary winding. The switching circuit, when switched to an on state, results in electrical energy discharging through the transformer in each core circuit, each transformer transforming the electrical energy into a stepped-up pulse, and each transformer transmitting a flyback pulse following the stepped-up pulse, the flyback pulse resetting the magnetic core. The output transmits an output pulse, the output pulse comprising the sum of each stepped-up pulse.

Device and method for generating a high voltage pulse

A plasma reactor comprises a housing, a first fluid inlet, a second fluid inlet, a first electric field generator, and an effluent outlet. The housing includes an axial aligned passageway and an internal reactor chamber coupled with the passageway. The first fluid inlet receives and delivers a first fluid to the reactor chamber. The second fluid inlet receives and delivers a second fluid to the reactor chamber. The first electric field generator is positioned in the reactor chamber and includes a first electrode and a spaced apart second electrode. The first electric field generator generates a first electric field, wherein the first fluid passes through the first electric field creating a plasma which is injected into the second fluid while the second fluid is flowing through the passageway to create an effluent. The effluent outlet receives the effluent from the reactor chamber and delivers it to a destination.

Multi-mode reactor for non-thermal plasma ion direct injection

A system for performing ozone water treatment comprises a voltage supply circuit and a plasma eductor reactor. The voltage supply circuit includes an H-bridge controller and driver, a transformer, and an output port. The H-bridge controller and driver are configured to switch the electrical polarity of a pair of terminals. A primary of the transformer is connected to the H-bridge driver and controller. A secondary of the transformer connects in parallel with a first capacitor and in series with an inductor and a second capacitor. The output port connects in parallel with the second capacitor. The plasma eductor reactor includes an electric field generator, a flow spreader, and a diffuser. The electric field generator includes a pair of electrodes that generate an electric field. The flow spreader supplies a stream of oxygen. The diffuser supplies a stream of water. The streams of water and oxygen pass through the electric field.

Methods, systems, and reactors for non-thermal plasma over liquid direct ion injection

A plasma reactor consisting of a plurality of elements placed between two or more plasma generating electrodes is presented. Said elements consisting of surfaces, conducting, and/or dielectric which allow for the dielectric isolation of the electrodes from each other and creating a plurality of dielectrically isolated spaces for plasma generation. This plasma reactor achieves a high surface area, with low capacitance allowing simplified construction and is suitable for high frequency operation.

Distributed dielectric barrier discharge reactor

A high-efficiency power semiconductor rectifier device () comprising a &#x3b4;P++ layer (), a P-body (), an N-drift region (), an N+ substrate (), an anode (), and a cathode (). The method of fabricating the device () comprises the steps of depositing the N-drift region () on the N+ substrate (), implanting boron into the N-drift region () to create a P-body region (), forming a layer of titanium silicide () on the P-body region (), and concentrating a portion of the implanted boron at the interface region between the layer of titanium silicide () and the P-body region () to create the &#x3b4;P++ layer () of supersaturated P-doped silicon.

High efficiency rectifier

Disclosed is an electroexplosive device including a semiconductor igniter chip with improved crack detection features and which fires in a known location. The chip includes diffused regions so that cracks formed therethrough will result in high leakage currents which are easily detected.

Growing community of inventors

Blue Springs, MO, United States of America

Christopher Daniel Hruska