Cabot Corporation

Cabot Microelectronics Corporation

Christopher C Streinz

Brian L Mueller

Shumin Wang

Steven Grumbine

Mingming Fang

Eric W G Hoglund

Eric Wg Hoglund

Rodney C Kistler

Vlasta Brusic Kaufman

Michael A Lucarelli

Matthew Neville

Debra L Scherber

Max H Walters

A method for polishing computer rigid disks comprising bringing at least one surface of the rigid disk into contact with a polishing pad and applying a composition to the rigid disk comprising at least one hydroxylamine additive and colloidal silica to give polished rigid disk.

Composition and method for polishing rigid disks

Chemical mechanical polishing compositions and slurries comprising a film-forming agent and at least one silane compound wherein the compositions are useful for polishing substrate features such as copper, tantalum, and tantalum nitride features.

Polishing composition for metal CMP

Chemical mechanical polishing compositions and slurries comprising a film forming agent and at least one silane compound wherein the compositions are useful for polishing substrate features such as copper, tantalum, and tantalum nitride features.

A polishing composition comprising a dispersion of silane modified abrasive particles formed by combining at least one metal oxide abrasive having at least one surface metal hydroxide with at least one silane compound and methods for polishing substrate features such as metal features and oxide features using the polishing compositions.

CMP composition containing silane modified abrasive particles

A polishing pad including a polishing pad substrate and a catalyst having multiple oxidation states wherein the catalyst containing polishing pad is used in conjunction with an oxidizing agent to chemically mechanically polish metal features associated with integrated circuits and other electronic devices.

Catalytic reactive pad for metal CMP

A method for polishing computer rigid disks comprising bringing at least one surface of the rigid disk into contact with a polishing pad and applying a composition to the rigid disk comprising at least one hydroxylamine additive and colloidal silica to give a polished rigid disk.

A chemical mechanical polishing composition comprising a composition capable of etching tungsten and at least one inhibitor of tungsten etching and methods for using the composition to polish tungsten containing substrates.

Polishing composition including an inhibitor of tungsten etching

A chemical mechanical polishing composition comprising a composition capable of etching tungsten and one inhibitor of tungsten etching and methods for using the composition to polish tungsten containing substrates.

A chemical mechanical polishing precursor comprising at least one catalyst having multiple oxidation states, and at least one stabilizer, the composition being useful when admixed with an oxidizing agent prior to use to remove metal layers from a substrate.

Composition and slurry useful for metal CMP

A method for polishing computer rigid disks comprising bringing at least one surface of the rigid disk into contact with a polishing pad and applying a dispersion to the rigid disk to give a polished rigid disk having an rms roughness less than about 1.4 nm. Also disclosed is a dispersion and polishing slurry for polishing rigid disks.

A chemical mechanical polishing slurry comprising an oxidizing agent, a fluoride containing additive and an abrasive and a method for using the fluoride containing additive chemical mechanical polishing slurry to remove tungsten and titanium from substrates.

Fluoride additive containing chemical mechanical polishing slurry and

A chemical mechanical polishing composition comprising an oxidizing agent at least one catalyst having multiple oxidation states, and at least one stabilizer, the composition being useful when combined with an abrasive or with an abrasive pad to remove metal layers from a substrate.

A chemical mechanical polishing composition comprising an oxidizing agent and at least one catalyst having multiple oxidation states, the composition being useful when combined with an abrasive or with an abrasive pad to remove metal layers from a substrate.

A polishing slurry for chemically mechanically polishing metal layers and films during the various stages of multilevel interconnect fabrication associated with integrated circuit manufacturing. The slurry includes an aqueous medium, an abrasive, an oxidizing agent, and an organic acid. The polishing slurry has been found to significantly lower or inhibit the silicon dioxide polishing rate, thus yielding enhanced selectivity. In addition, the polishing slurry is useful in providing effective polishing to metal layers at desired polishing rates while minimizing surface imperfections and defects. Also disclosed is a method for producing coplanar metal/insulator films on a substrate utilizing the slurry of the present invention and chemical mechanical polishing technique relating thereto.

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Aurora, IL, United States of America

Christopher C Streinz