Texas Instruments Corporation

Christopher C Baum

James B Friedmann

Martin B Mollat

Jonathan W VanBuskirk

The present invention provides a method for manufacturing a semiconductor device. The method for manufacturing the semiconductor device, without limitation, may include providing a substrate having a sub-surface feature and a surface feature, and determining a location of the sub-surface feature relative to the surface feature using a scatterometer.

Method for locating a sub-surface feature using a scatterometer

A method for determining the anti-reflective coating (or bottom anti-reflective coating) over-etch time adjust with real-time process feedback is presented. The critical dimension CDof the patterned photoresist is measured and a first wafer with median values chosen () from a lot. A first time t* is found () and used to form the desired structure. Using the measured critical dimension of the formed structure on the first wafer a second time tis found (). Finally, an over-etch time t(x) is found and used to etch the remaining wafers in the lot ().

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Richardson, TX, United States of America

Christopher C Baum