Fairchild Semiconductor Corporation

Texas Instruments Corporation

Intersil Corporation

Harris Corporation

Ciclon Semiconductor Device Corp.

Other

Texas Instruments Lehigh Valley Incorporated

Christopher Boguslaw Kocon

Simon John Molloy

Hideaki Kawahara

John Manning Savidge Neilson

Steven Paul Sapp

Nathan Lawrence Kraft

Thomas E Grebs

Joseph Andrew Yedinak

Rodney S Ridley

Gary M Dolny

Dean E Probst

Seetharaman Sridhar

Ashok Challa

Hamza Yilmaz

Jun Zeng

Daniel S Calafut

Bruce Douglas Marchant

Hong Yang

Satoshi Suzuki

Alan Elbanhawy

Peter H Wilson

Babak S Sani

Shuming Xu

Jacek Korec

Paul Thorup

Becky Losee

Henry Litzmann Edwards

Praveen Muraleedharan Shenoy

Robert Herrick

Thomas Eugene Grebs

Linda S Brush

Touhidur Rahman

Taylor R Efland

Marie Denison

Charles Walter Pearce

James J Murphy

Haian Lin

Gordon K Madson

Richard Stokes

Louise E Skurkey

Joseph L Cumbo

Jayhoon Chung

Debra S Woolsey

Curry Bachman Taylor

Alexei Sadovnikov

John M Neilson

Yunlong Liu

Andrew Derek Strachan

Hao Wu

Christopher Lawrence Rexer

Chanho Park

Yufei Xiong

Jaegil Lee

Christopher L Rexer

Linda Susan Brush

Jason Higgs

Gary Eugene Daum

John Lawrence Benjamin

Rodney S Ridley, Sr

Richard Douglas Stokes

Boling Wen

John Mytych

Adam Selsley

Tatsuya Tominari

John Manning Neilson

Louis Ellen Skurkey

A microelectronic device includes a hybrid component. The microelectronic device has a substrate including silicon semiconductor material. The hybrid component includes a silicon portion in the silicon, and a wide bandgap (WBG) structure in a silicon recess on the silicon portion of the hybrid device. The silicon recess contains a silicon recess nitride sidewall. The WBG structure includes a WBG semiconductor material having a bandgap energy greater than a bandgap energy of the silicon. The hybrid component has a first current terminal on the silicon, and a second current terminal on the WBG structure. The microelectronic device may be formed by forming the silicon portion of the hybrid component in the silicon, and subsequently forming the WBG structure in a silicon recess on the silicon.

Hybrid component with silicon and wide bandgap semiconductor material in silicon recess with nitride spacer

A microelectronic device includes a hybrid component. The microelectronic device has a substrate including silicon semiconductor material. The hybrid component includes a silicon portion in the silicon, and a wide bandgap (WBG) structure on the silicon. The WBG structure includes a WBG semiconductor material having a bandgap energy greater than a bandgap energy of the silicon. The hybrid component has a first current terminal on the silicon, and a second current terminal on the WBG semiconductor structure. The microelectronic device may be formed by forming the silicon portion of the hybrid component in the silicon, and subsequently forming the WBG structure on the silicon.

Hybrid component with silicon and wide bandgap semconductor material

A semiconductor device includes a first semiconductor structure. The first semiconductor structure includes a first semiconductor material having a band-gap. The first semiconductor structure has a first surface. An insulating layer has first and second opposing surfaces. The first surface of the insulating layer is on the first surface of the first semiconductor structure. A second semiconductor structure is on the second surface of the insulating layer and includes a second semiconductor material having a band-gap that is smaller than the band-gap of the first semiconductor material. A floating electrode couples the first semiconductor structure to the second semiconductor structure.

Semiconductor on insulator on wide band-gap semiconductor

A semiconductor device includes a semiconductor substrate with a trench, a body region under the trench with majority carrier dopants of a first type, and a transistor, including a source region under the trench with majority carrier dopants of a second type, a drain region spaced from the trench with majority carrier dopants of the second type, a gate structure in the trench proximate a channel portion of a body region, and an oxide structure in the trench proximate a side of the gate structure.

Drain extended transistor with trench gate

A semiconductor device includes a switch element having a surface and first and second regions and including a first semiconductor material having a band-gap. The first region of the switch element is coupled to a source contact. A floating electrode has first and second ends. The first end of the floating electrode is coupled to the second region of the switch element. A voltage-support structure includes a second semiconductor material having a band-gap that is larger than the band-gap of the first semiconductor material. The voltage-support structure is in contact with the second end of the floating electrode. A drain contact is coupled to the voltage-support structure.

Hybrid semiconductor device

A semiconductor device includes a vertical drift region over a drain contact region, abutted on opposite sides by RESURF trenches. A split gate is disposed over the vertical drift region. A first portion of the split gate is a gate of an MOS transistor and is located over a body of the MOS transistor over a first side of the vertical drift region. A second portion of the split gate is a gate of a channel diode and is located over a body of the channel diode over a second, opposite, side of the vertical drift region. A source electrode is electrically coupled to a source region of the channel diode and a source region of the MOS transistor.

Integrated channel diode

A semiconductor switching circuit associated with a power semiconductor circuit is described. The semiconductor switching circuit includes a snubber circuit comprising a snubber switch element that comprises a first terminal configured to couple to a supply node associated with the power semiconductor circuit and a second terminal configured to couple to a switch node associated with the power semiconductor circuit. In some aspects, the snubber switch element is configured to bypass a ringing voltage at the switch node associated with the power semiconductor circuit to the supply node associated with the power semiconductor circuit. In some aspects, the ringing voltage at the switch node comprises a voltage that is greater than a supply voltage associated with the supply node.

Active monolithic snubber design

An electronic device includes a MOS transistor with a source and a drain, and a capacitor with a first plate connected directly to the source, and a second plate connected directly to the drain. A method to fabricate an electronic device includes fabricating a MOS transistor on or in a semiconductor structure, and fabricating a capacitor having a first plate connected directly to a source of the MOS transistor, and a second plate connected directly to a drain of the MOS transistor.

Transistor with integrated capacitor

An electronic device includes a silicon-on-insulator (SOI) structure, and an electrostatic discharge (ESD) protection device, with an isolation layer having a thickness and extending in a trench from a first implanted region. The ESD protection device includes a conductive field plate that extends over a portion of the first implanted region and past the first implanted region and over a portion of the isolation layer by an overlap distance that is 3.5 to 5.0 times the thickness of the isolation layer. In one example, the ESD protection device has a finger or racetrack shape, and the first implanted region and a second implanted region extend around first and second turn portions of the finger shape.

ESD protection device with breakdown voltage stabilization

An electronic device includes an ESD protection device with implanted regions that extend around a finger shape with a straight portion and elongated turn portions, and contacts that extend only in the straight portion, where the turn portions include elongated lightly doped implanted regions to mitigate turn on of a curvature PNP transistor for uniform device breakdown performance. Adjacent finger structures are spaced apart from one another to mitigate thermal transfer between device fingers.

Breakdown uniformity for ESD protection device

A semiconductor device includes a medium voltage MOSFET having a vertical drain drift region between RESURF trenches containing field plates which are electrically coupled to a source electrode of the MOSFET. A split gate with a central opening is disposed above the drain drift region between the RESURF trenches. A two-level LDD region is disposed below the central opening in the split gate. A contact metal stack makes contact with a source region at lateral sides of the triple contact structure, and with a body contact region and the field plates in the RESURF trenches at a bottom surface of the triple contact structure. A perimeter RESURF trench surrounds the MOSFET. A field plate in the perimeter RESURF trench is electrically coupled to the source electrode of the MOSFET. An integrated snubber may be formed in trenches formed concurrently with the RESURF trenches.

Medium high voltage MOSFET device

A device includes a transistor formed on a substrate. The transistor includes an n-type drain contact layer, an n-type drain layer, an oxide layer, a p-type body region, a p-type terminal region, body trenches, and terminal trenches. The n-type drain contact layer is near a bottom surface of the substrate. The n-type drain layer is positioned on the n-type drain contact layer. The oxide layer circumscribes a transistor region. The p-type body region is positioned within the transistor region. The p-type terminal region extends from under the oxide layer to an edge of the transistor region, thereby forming a contiguous junction with the p-type body region. The body trenches is within the transistor region and interleaves with the p-type body region, whereas the terminal trenches is outside the transistor region and interleaves with the p-type terminal region.

Power transistor with terminal trenches in terminal resurf regions

Growing community of inventors

Plains, PA, United States of America

Christopher Boguslaw Kocon