Commissariat &#xc0; L'&#xc9;nergie Atomique Et Aux &#xc9;nergies Alternatives

Commissariat a L'energie Atomique

Idemia Identity & Security France

Christophe Serbutoviez

Mohammed Benwadih

Jean-François Mainguet

Joël-Yann Fourre

Mohamed Benwadih

Jean-Marie Verilhac

Antoine Latour

Joel-Yann Fourre

Flore Sonier

The invention relates to a manufacturing process of a pixel array of a thermal pattern sensor comprising the steps of:

Manufacturing process of a pixel array of a thermal pattern sensor and associated sensor

Thermal pattern sensor comprising several pixels arranged on a substrate, each pixel including at least: a pyroelectric capacitance formed by at least one portion of pyroelectric material arranged between at least one lower electrode and at least one upper electrode, with the lower electrode arranged between the substrate and the portion of pyroelectric material, a dielectric layer such that the upper electrode is arranged between the portion of pyroelectric material and the dielectric layer, a heating element including at least one deposition of electrically conductive particles and such that the dielectric layer is arranged between the upper electrode and the heating element, a protective layer arranged between the dielectric layer and the heating element and including at least one material of which the Shore A hardness is greater than or equal to around 60.

Thermal pattern sensor with pyroelectric capacitance and hard protective layer

The invention relates to a method for manufacturing adjacent first and second areas of a surface, said areas consisting, respectively, of first and second materials that are different from each other. Said method involves: depositing a first liquid volume that encompasses the first area and comprises a solvent in which the first material is dispersed; depositing a second liquid volume that encompasses the second area and comprises a solvent in which the second material is dispersed; and removing the solvents. According to the invention, the solvents of the first and second volumes are immiscible, and the second volume is simultaneously or consecutively deposited with the deposition of the first volume, before the first volume reaches the second area.

Method for manufacturing two adjacent areas made of different materials

The present invention relates to an organic transistor comprising a conductive element which forms a drain; a conductive element which forms a source located away from the drain; a conductive element which forms a gate having a surface which faces the drain and a surface which faces the source; a semiconducting layer which is in contact with the drain and the source; and a dielectric layer located between, firstly, the gate and, secondly, the source and the drain with the dielectric layer having a dielectric permittivity which varies depending on its thickness. According to the invention, the dielectric layer comprises a layer of a first dielectric material having a dielectric permittivity of less than four in which there is formed, at least between said opposite-facing surfaces, a volume of a second material, said volume having an overall cross-section which tapers from gate towards the space between drain and source and in that the relative dielectric permittivity of the second material exceeds four.

Organic transistor and method for fabricating a dielectric layer of such a transistor

The invention relates to a device comprising a layer made from a fluoropolymer, of which at least part of the surface is covered with a composition comprising a polymer having at least one fluorinated function and at least one acid or base function and forming a bonding layer on said fluoropolymer, said bonding layer being fully or partly covered by another layer.

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Voiron, France

Christophe Serbutoviez