International Business Machines Corporation

Christophe P Rossel

Evangelos Stavros Eleftheriou

Charalampos Pozidis

Abu Sebastian

Michel Despont

Daniele Caimi

Christoph E Gerber

Peter Bloechl

Armin Beck

Michel Willemin

Coorg Bednorz

A method for manufacturing a resistive memory element includes providing a storage layer comprising a resistance changeable material, said resistance changeable material comprising carbon; providing contact layers for contacting the storage layer, wherein the storage layer is disposed between a bottom contact layer and a top contact layer; and doping the resistance changeable material with a dopant material.

Method for manufacturing a carbon-based memory element and memory element

One embodiment of the disclosure can provide a storage layer of a resistive memory element comprising a resistance changeable material. The resistance changeable material can include carbon. Contact layers can be provided for contacting the storage layer. The storage layer can be disposed between a bottom contact layer and a top contact layer. The resistance changeable material can be annealed at a predetermined temperature over a predetermined annealing time for rearranging an atomic order of the resistance changeable material.

Carbon-based memory element

A resistor with improved switchable resistance includes a first electrode, a second electrode, and an insulating dielectric structure between the first and second electrodes. The insulating dielectric structure includes a confined conductive region providing a first resistance state and a second resistance state; the resistance state of the confined conductive region being switchable between the first and second resistance states by a control signal.

Resistor with improved switchable resistance and non-volatile memory device

A resistor with improved switchable resistance and a non-volatile memory device includes a first electrode, a second electrode facing the first electrode and a resistance structure between the first electrode and the second electrode. The resistance structure includes an insulating dielectric material in which a confined switchable conductive region is formed between the first and second electrode. The resistor further includes a perturbation element, locally exerting mechanical stress on the resistance structure in the vicinity of the perturbation element at least during a forming process in which the confined switchable conductive region is formed.

A microelectronic device is designed such that it includes a region between electrodes having a switchable ohmic resistance wherein the region is made of a substance comprising components A , B , and oxygen O . The ohmic resistance in the region is reversibly switchable between different states by applying different voltage pulses. The different voltage pulses lead to the respective different states. An appropriate amount of dopant(s) in the substance improves the switching, whereby the microelectronic device becomes controllable and reliable.

Microelectronic device for storing information with switchable ohmic resistance

A magnetic sensing unit for measuring displacements on a nanometer scale is provided. A moveable part and a fixed part of a microdevice magnetic sensing unit comprises a magnetic element having a magnetic field and a magnetic sensor, the magnetic element being located on the moveable part and the magnetic sensor on the fixed part, or alternatively, the magnetic sensor being located on the moveable part and the magnetic element on the fixed part. The magnetic sensor and/or the magnetic element comprise an integral part of the microdevice. The magnetic element and the magnetic sensor are arranged relative to each other such that when the moveable part is displaced the change of the magnetic field at the magnetic sensor is detectable by use of the magnetic sensor.

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Rueschlikon, Switzerland

Christophe P Rossel