Commissariat &#xc0; L'&#xc9;nergie Atomique Et Aux &#xc9;nergies Alternatives

Commissariat a L'energie Atomique

Commissariat À L'energie Atomique (cea)

S.o.i.tec Silicon on Insulator Technologies

S.o.i. Tec Silicon on Insulator Technologies, S.a.

Soitec

Christophe Morales

Hubert Moriceau

Frank Fournel

Marc Zussy

Fabrice Letertre

Franck Fournel

Vincent Larrey

Maxime Argoud

Sèbastien Kerdiles

Christophe Maleville

Olivier Rayssac

Sébastien Kerdiles

Bruce Faure

Chrystel Deguet

Sylvain Maitrejean

Konstantin Bourdelle

Lea Di Cioccio

Frédéric Mazen

Matthew Charles

Frederic Mazen

Léa Di Cioccio

Francois Rieutord

François Rieutord

Corinne Maunand Tussot

Pierre Perreau

Jérôme Dechamp

Thierry Chevolleau

Philippe Montmayeul

Benjamin Scarfogliere

Caroline Rauer

Laure Libralesso

Caroline Ventosa

Marwan Tedjini

Aziliz Calvez

Sylvie Sartori

Tussot Corinne Maunand

A method for directly bonding a first and a second substrate. The method comprises removing surface oxide layers from bonding faces of the first and of the second substrate, and hydrogen passivation of the bonding faces, then, in a vacuum, electron impact hydrogen desorption on the bonding faces followed by placement of the bonding faces in intimate contact with one another.

Bonding method with electron-stimulated desorption

A process includes the successive steps of: a) providing first and second substrates, each including a first surface and an opposite, second surface, lateral edges connecting the first and second surfaces, b) bonding the first substrate to the second substrate by direct bonding with the first surfaces of the first and second substrates so as to form a bonding interface (IC), and making the lateral edges of the first and second substrates hydrophobic on either side of the bonding interface (IC).

Method for bonding by direct adhesion

The invention aims for a wafer edge trimming methodadhered on a support waferby way of an interface layer. A zone at the perimeterof the waferis trimmed by grinding. The stopping of the grinding is advantageously done at the level of the interface layer. To do this, an interface layercomprising a transition layerhaving a resistance to grinding greater than that of the waferis used. According to a possibility, detecting an increase of the resistance to grinding during the grinding is done, so as to stop the grinding.

Method for wafer trimming

A method is provided, including successive steps of a) providing a donor substrate covered with a layer of oxide; b) implanting gaseous species in the donor substrate, through the layer to form an embrittlement zone, and at the end of step b), the layer has an absorbance peak with a maximum at a first wavenumber, and with a full width at half maximum; c) applying ultraviolet radiation to the free surface of the layer under an ozone atmosphere and according to a thermal budget for: shifting the maximum by at least 3 cmtowards increasing wavenumbers, reducing the full width at half maximum by at least 3 cm, and allowing direct adhesion with the free surface; d) assembling the donor substrate on the supporting substrate by direct adhesion with the free surface; and e) splitting the donor substrate along the embrittlement zone to expose a useful layer.

Method for transferring a useful layer

This method comprises the successive steps of providing a donor substrate comprising a first surface; smoothing the first surface of the donor substrate until a reconstructed surface topology is obtained; forming a first dielectric film on the smoothed first surface of the donor substrate, in such a way that the first dielectric film has a surface that preserves the reconstructed surface topology; implanting gaseous species in the donor substrate, through the first dielectric film, so as to form an embrittlement zone, the useful layer being delimited by the embrittlement zone and by the first surface of the donor substrate; assembling the donor substrate on the supporting substrate by direct adhesion; and splitting the donor substrate along the embrittlement zone so as to expose the useful layer.

Method for transfer of a useful layer

The present invention relates to the controlling of the deposition quality of an epitaxial layer, for example of gallium nitride, on a growth plate, for example of silicon, in particular at the level of the edges of the plate. The invention aims, in particular, to reduce the complexity and the production cost of known solutions. The production method according to the invention highlights the existence of a chamfer on each growth plate and provides a self-positioned deposition of a protective film on at least one part of the chamfer using a mechanical mask, preventing the deposition of the protective film on the useful zone Zu through epitaxy.

Method for producing an epitaxial layer on a growth plate

A method for direct bonding between at least a first and a second substrate, each of the first and second substrates containing a first and a second main surface, the method including: a first thinning of the edges of the first substrate over at least one portion of the circumference of the first substrate, at the first main surface of the first substrate; and placing the second main surface of the first substrate in contact with the second main surface of the second substrate such that a bonding wave propagates between the first and second substrates, securing the first and second substrates to one another by direct bonding such that portions of the second main surface of the first substrate located below the thinned portions of the first main surface of the first substrate are secured to the second substrate.

Method for direct bonding of substrates including thinning of the edges of at least one of the two substrates

This method includes steps a) providing the first structure and second structure, the first structure including a surface on which a silicon layer is formed; b) bombarding the silicon layer by a beam (F) of species configured to reach the surface of the first structure, and to preserve a part of the silicon layer with a surface roughness of less than 1 nm RMS on completion of the bombardment; c) bonding the first structure and second structure by direct bonding between the part of the silicon layer preserved in step b) and the second structure, steps b) and c) being executed in the same chamber subjected to a vacuum of less than 10mbar.

Method for performing direct bonding between two structures

A method for manufacturing a flexible structure including implanting ionic species in first and second source substrates so as to form first and second embrittlement regions respectively, delimiting first and second thin films, providing a flexible substrate, the stiffness R of which is less than or equal to 10GPa&#xb7;&#x3bc;m, securing the first and second thin films to the first and second faces of the flexible substrate respectively so as to form a stack including the flexible structure delimited by the first and second embrittlement regions, the flexible structure having a stiffening effect suitable for allowing transfers of the first and second thin films, and applying a thermal budget so as to transfer the first and second thin films onto the flexible substrate.

Manufacturing a flexible structure by transfers of layers

A method for obtaining a film made out of a first material on a polymer support, said method comprising bonding a first wafer to a second wafer, thereby defining a bonding interface between said first wafer and said second wafer, at least one of said first and second wafers comprising a layer of said first material situated in proximity to said bonding interface, in said first wafer, hollowing out a cavity, said cavity comprising a bottom parallel to said bonding interface that defines, in said first wafer, a bottom zone at a controlled distance relative to said second wafer, forming, in said cavity, a polymer layer on a thickness controlled from a bottom thereof to obtain a combined wafer portion, said combined wafer portion comprising a bottom zone formed by said polymer layer on said bottom and a peripheral zone, and eliminating said second wafer on a major portion of a thickness thereof, thereby releasing, beneath said polymer layer, a film comprising said layer of said first material.

Method of fabricating polymer film in the cavity of a wafer

A method for treating at least one first material layer including siloxane bonds, wherein at least one surface can be interlocked with a surface of a second material layer by direct bonding, the method including: at least one forced diffusion at a temperature greater than or equal to 30&#xb0; C., at least in the first material layer, of chemical species including at least one pair of free electrons and at least one labile proton; and converting at least one portion of the siloxane bonds into silanol bonds in at least one portion of the first material layer extending from the surface to a depth greater than or equal to approximately 10 nm.

Method for the treatment and direct bonding of a material layer

Adhesion by molecular bonding of two free surfaces of first and second substrates, for example formed by monocrystalline silicon wafers, comprises at least successively:

Molecular bonding method with cleaning with hydrofluoric acid in vapor phase and rinsing with deionized water

Two plates, each comprising a thin layer of silicon or silicon oxide at a surface thereof, are bonded by subjecting the thin layer of at least one of the plates to a surface treatment step forming a silicon oxynitride superficial thin film with a thickness of less than 5nm. The thin film is performed with a nitrogen-based plasma generated by an inductively coupled plasma source. Furthermore, a potential difference applied between the plasma and a substrate holder supporting said plate during the surface treatment step is less than 50 V, advantageously less than 15 V and preferably zero. This enables a defect-free bonding interface to be obtained irrespective of a temperature of any heat treatment carried out after a contacting step between the respective thin layers of the two plates.

Nitrogen-plasma surface treatment in a direct bonding method

A method of separating a structure including a fragile zone delimiting two substructures to be separated, where at least one plane blade is advanced in a separation plane corresponding to a median plane of the fragile zone, from an entry edge of the structure in a direction of advance toward an exit edge of the structure, so as to cause progressive separation of the two substructures, and where the inclination of the blade in the separation plane is varied relative to the direction of advance.

Method and device for separating a structure

The invention relates to a method for producing a semiconducting structure including:

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Pont de Claix, France

Christophe Morales